Abstract: An arrangement of voltage variable materials for the protection of electrical components from electrical overstress (EOS) transients. A device having a plurality of electrical leads, a ground plane and a layer of voltage variable material. The voltage variable material physically bonds the plurality of electrical leads to one another as well as provides an electrical connection between the plurality of electrical leads and the ground plane. A die having a circuit integrated therein is attached to the ground plane. Conductive members electrically connect the plurality of electrical leads to the integrated circuit. At normal operating voltages, the voltage variable material has a high resistance, thus channeling current from the electrical leads to the integrated circuit via the conductive members.

Abstract: A composition for providing protection against electrical overstress (EOS) comprising an insulating binder, doped semiconductive particles, and semiconductive particles. The composite materials exhibit a high electrical resistance to normal operating voltage values, but in response to an EOS transient switch to a low electrical resistance and clamp the EOS transient voltage to a low level for the duration of the EOS transient.

Abstract: An arrangement of voltage variable materials for the protection of electrical components from electrical overstress (EOS) transients. A device having a plurality of electrical leads, a ground plane and a layer of voltage variable material. The voltage variable material physically bonds the plurality of electrical leads to one another as well as provides an electrical connection between the plurality of electrical leads and the ground plane. A die having a circuit integrated therein is attached to the ground plane. Conductive members electrically connect the plurality of electrical leads to the integrated circuit. At normal operating voltages, the voltage variable material has a high resistance, thus channeling current from the electrical leads to the integrated circuit via the conductive members.

Abstract: An arrangement of voltage variable materials for the protection of electrical components from electrical overstress (EOS) transients. A device having a plurality of electrical leads, a ground plane and a layer of voltage variable material. The voltage variable material physically bonds the plurality of electrical leads to one another as well as provides an electrical connection between the plurality of electrical leads and the ground plane. A die having a circuit integrated therein is attached to the ground plane. Conductive members electrically connect the plurality of electrical leads to the integrated circuit. At normal operating voltages, the voltage variable material has a high resistance, thus channeling current from the electrical leads to the integrated circuit via the conductive members.

Abstract: An arrangement of voltage variable materials for the protection of electrical components from electrical overstress (EOS) transients. A device having a plurality of electrical leads, a ground plane and a layer of voltage variable material. The voltage variable material physically bonds the plurality of electrical leads to one another as well as provides an electrical connection between the plurality of electrical leads and the ground plane. A die having a circuit integrated therein is attached to the ground plane. Conductive members electrically connect the plurality of electrical leads to the integrated circuit. At normal operating voltages, the voltage variable material has a high resistance, thus channeling current from the electrical leads to the integrated circuit via the conductive members.

Abstract: A composition and devices utilizing these compositions for providing protection against electrical overstress including a matrix formed of a mixture of an insulating binder, conductive particles having an average particle size of less than 10 microns, and semiconductive particles having an average particle size of less than 10 microns. The compositions exhibit improved clamping voltages in a range of about 30 volts to greater than 2,000 volts.

Abstract: The thin film, electrical device is an subminiature overvoltage circuit protection device in a surface mountable configuration for use in printed circuit board or thick film hybrid circuit technology. The surface mountable device (SMD) is designed to protect against electrostatic discharge (ESD) damage to electronic components. The circuit protection device comprises three material subassemblies. The first subassembly generally includes a substrate carrier, electrodes, and terminal pads for connecting the protection device 60 to a PC board. The second subassembly includes a voltage variable polymer material with nonlinear resistance characteristics, and the third subassembly includes a cover coat for protecting other elements of the circuit protection device.

Abstract: An electrical overstress composite of conductor/semicondcutor particles including particles in the 100 micron range, micron range, and submicron range, distributed in a densely packed homogeneous manner, a minimum proportion of 100 angstrom range insulative particles separating the conductor/semiconductor particles, and a minimum proportion of insulative binder matrix sufficient to combine said particles into a stable coherent body.

Abstract: An electrical overstress composite of conductor/semicondcutor particles including particles in the 100 micron range, micron range, and submicron range, distributed in a densely packed homogeneous manner, a minimum proportion of 100 angstrom range insulative particles separating the conductor/semiconductor particles, and a minimum proportion of insulative binder matrix sufficient to combine said particles into a stable coherent body.

Abstract: An electrical overstress protection composite of electrical conductor/semiconductor particles including particles in the 100 to 10 micron range, micron range, and submicron range, distributed in a densely packed homogeneous manner, a minimum proportion of 100 angstrom range insulative particles separating the conductor/semiconductor particles, and a minimum proportion of insulative binder matrix sufficient to combine said particles into a stable coherent body.

Abstract: Electrostatic discharge (ESD) sensing apparatus for testing and displaying extremely high frequency discharges. The apparatus incorporates a surface mounted current shunt in the form of a thin foil or film of less than one skin depth thickness at the frequency of interest. This is sandwiched between a coaxial connector base plate and a ground plane mounting plate. The foil or film is symmetrically oriented about the axis of the connector at a central opening in the mounting plate. A discharge path is provided through the opening to the foil and, on the other side, through a small resistor to the central conductor of the coaxial connector which may be connected to a measuring or display apparatus for a complete test system. A calibration unit includes a plurality of sensing devices configured for different cutoff frequencies and levels of discharge pulses.

Abstract: An electrical connector (10) has first and second separable contacting electrodes (12, 14) which do not generate an arc on making or breaking. A member (44) interrelates one of the electrodes (14) via a spring-loaded drive cap (24) at ground potential, which member 44 is constructed of a material a wide range of electrical resistance (e.g., insulator to substantial short) inversely response to the magnitude of electric field across the member. On electrode preparation, the drive cap (24) establishes a relative movement of the member (44) with respect to the electrode (14) reducing the member material thickness to such a point that the electric field across the intervening member material reduces the electrical resistance to a desired low level (e.g., short to ground).

Abstract: An arrangement for protection of electrical equipment from electrical overstress pulses or transients using an electrical coupling to ground through a non-linear resistance having a high resistance at normal voltages and a very low resistance in response to an excessively high voltage pulse of transient, wherein the non-liner resistance is interposed between two contraposed faces of two electrodes, and at least one of said electrodes is a thin planar element whose said face is a thin edge of the planar element.

Abstract: An electrical overstress composite of conductor/semiconductor particles including particles in the 100 micron range, micron range, and submicron range, distributed in a densely packed homogeneous manner, a minimum proportion of 100 angstrom range insulative particles separating the conductor/semiconductor particles, and a minimum proportion of insulative binder matrix sufficient to combine said particles into a stable coherent body.

Abstract: A material provides protection against electrical overstress transients having rise times as rapid as a few nanoseconds or less. The material comprises a matrix formed of a mixture of separate particles of conductive materials and separate particles of semiconductor materials coated with insulating material to provide chains of the particles within the matrix with interparticle separation distances along the chains less than several hundred angstroms, thereby to permit quantum-mechanical tunneling of electrons between the separate particles in response to high energy electrical transients.