Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

Abstract: A semiconductor die assembly comprising a semiconductor die with bond pads, a plurality of leads which extend across the semiconductor die and terminates over their respective bond pads, and an alpha barrier preferably positioned between the leads and the semiconductor die. Electrical connection is made between the leads and their respective bond pads by a strip of anisotropically conductive elastomeric material, preferably a multi-layer laminate consisting of alternating parallel sheets of a conductive foil and an insulating elastomer wherein the laminate layers are oriented perpendicular to both the bond pad and the lead, positioned between the leads and the bond pads. A burn-in die according to the present invention is also disclosed.

Abstract: A semiconductor die assembly comprising a semiconductor die with bond pads, a plurality of leads which extend across the semiconductor die and terminates over their respective bond pads, and an alpha barrier preferably positioned between the leads and the semiconductor die. Electrical connection is made between the leads and their respective bond pads by a strip of anisotropically conductive elastomeric material, preferably a multi-layer laminate consisting of alternating parallel sheets of a conductive foil and an insulating elastomer wherein the laminate layers are oriented perpendicular to both the bond pad and the lead, positioned between the leads and the bond pads. A burn-in die according to the present invention is also disclosed.

Abstract: The present invention is a high-speed planarizing machine with a platform that holds the wafer stationary during planarization, and a carrier positioned opposite the platform. The carrier rotates about an axis and translates in a plane that is substantially parallel to the wafer. A polishing pad is attached to the carrier and positioned opposite the wafer. The carrier rotates and translates the polishing pad across the wafer while the wafer is held stationary.

Abstract: The present invention is a high-speed planarizing machine with a platform that holds the upward facing wafer stationary during planarization, and a carrier positioned opposite the platform. The carrier rotates about an eccentric axis and translates in a plane that is substantially parallel to the wafer. A polishing pad is smaller in diameter than the wafer and is attached to the carrier and positioned opposite the wafer. The carrier rotates and translates the polishing pad across the wafer while the wafer is held stationary.

Abstract: A wafer polishing apparatus includes: a) a rotatable polishing platen; b) a polishing pad received outwardly of the polishing platen; c) a wafer carrier head, the wafer carrier head being mounted for selective rotation relative to the polishing platen; the wafer carrier head including a wafer carrier apparatus for use in polishing a semiconductor wafer having a particular orientation edge discontinuity shape, the wafer carrier apparatus including, i) a base support mounted to rotate with the carrier head; and ii) a wafer carrier ring separately rotatably received relative to the base support, the wafer carrier ring having an internal periphery which is sized and shaped to receive the particular semiconductor wafer for which the apparatus is adapted, the wafer carrier ring internal periphery including a portion which is sized and shaped to mate with the particular orientation edge discontinuity shape. A polishing process is also disclosed using this and other apparatus.

Abstract: A wafer polishing apparatus includes: a) a rotatable polishing platen; b) a polishing pad received outwardly of the polishing platen; c) a wafer carrier head, the wafer carrier head being mounted for selective rotation relative to the polishing platen; the wafer carrier head including a wafer carrier apparatus for use in polishing a semiconductor wafer having a particular orientation edge discontinuity shape, the wafer carrier apparatus including, i) a base support mounted to rotate with the carrier head; and ii) a wafer carrier ring separately rotatably received relative to the base support, the wafer carrier ring having an internal periphery which is sized and shaped to receive the particular semiconductor wafer for which the apparatus is adapted, the wafer carrier ring internal periphery including a portion which is sized and shaped to mate with the particular orientation edge discontinuity shape. A polishing process is also disclosed using this and other apparatus.