Abstract: The present application is directed an optical gyroscope. The optical gyroscope includes a substrate including a first and a second waveguide disposed thereon. One or both of the waveguides may be doped with a rare-earth material. A crossing element is disposed between the first and the second waveguides to form a substantially orthogonal connection therebetween. The application is also directed to a system including an optical gyroscope. The application is further directed to a method of observing characteristics of the optical gyroscope.

Abstract: The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices.

Abstract: The present application is directed an optical gyroscope. The optical gyroscope includes a substrate including a first and a second waveguide disposed thereon. One or both of the waveguides may be doped with a rare-earth material. A crossing element is disposed between the first and the second waveguides to form a substantially orthogonal connection therebetween. The application is also directed to a system including an optical gyroscope. The application is further directed to a method of observing characteristics of the optical gyroscope.

Abstract: The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices.

Abstract: The specification describes a plastic overmolded package for high power devices that has a very low lead count, typically fewer than eight, and in a preferred embodiment, only two. The leads occupy essentially the same linear space as the multiple leads in a conventional package and thus have a wide-blade configuration. To improve mechanical integrity, the leads in the package are provided with retention slots to add back the equivalent of the plastic joints in the spaces that were eliminated due to the wide-blade design. The retention slots extend in the width dimension of the leads.

Abstract: The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

Abstract: An electronic module has a non-conducting substrate having at least one opening and a die/carrier assembly mounted within the opening in the substrate. The assembly has a conducting carrier and one or more integrated circuit (IC) dies mounted to the carrier. The invention may be implemented as an electronic system comprising a circuit board (CB) and at least one such electronic module mounted to the CB.

Abstract: The specification describes a plastic overmolded package for high power devices that has a very low lead count, typically fewer than eight, and in a preferred embodiment, only two. The leads occupy essentially the same linear space as the multiple leads in a conventional package and thus have a wide-blade configuration. To improve mechanical integrity, the leads in the package are provided with retention slots to add back the equivalent of the plastic joints in the spaces that were eliminated due to the wide-blade design. The retention slots extend in the width dimension of the leads.

Abstract: A process for fabricating a power hybrid module including placing at least one carrier assembly in at least one opening in at least one printed circuit board, mounting the at least one carrier assembly and the at least one printed circuit board on assembly tape, electrically connecting one of the at least one carrier assemblies and one of the at least one printed circuit boards, overmolding the at least one carrier assembly and the at least one printed circuit board and removing the assembly tape to produce a surface mount power hybrid module. A power hybrid module including at least one printed circuit board with at least one opening therein, at least one carrier assembly, positioned in the at least one opening such that said at least one carrier assembly may be surface mounted and electrically connected to the at least one printed circuit board, and an overmold over the at least one printed circuit board and the at least one carrier assembly.

Abstract: The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device.

Abstract: An integrated K-port antenna where K is an integer equal to 2 or greater and where the antenna is sufficiently small that it can be enclosed by K−1 overlapping spheres each having a diameter of &lgr;/2 where &lgr; is equal to c/f and f represents an operating frequency of the antenna.

Abstract: A wireless communication device comprising a signal processing device coupled to a cluster of multiple port antennas that can simultaneously transmit and/or receive communication signals. The cluster of antennas operates within a frequency band having maximum frequency f, and at least a pair of the antenna ports is placed in a volume of space whose longest linear dimension is &lgr;/3 or less where &lgr; is equal to c/f. During operation of the antenna cluster, the radiation patterns from different antennas have main lobes that point in different directions and have correlations of 0.7 or less with respect to each other.