Abstract: A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

Abstract: A magnetoresistive memory includes a control circuit with a first pole that, via a reading distributor, can be individually connected to first ends of bit lines by switching elements. The control circuit also has a second pole, which supplies power to an evaluator, and has a third pole that is connected to a reference voltage source. The readout circuit additionally includes a third voltage source having a voltage, which is approximately equal to the voltage of the first reading voltage source and which can be individually connected to second ends of the bit lines by means of switching elements. Finally, the readout circuit includes a fourth voltage source, which can be individually connected to second ends of the word lines by means of switching elements.

Abstract: A magnetoresistive memory includes a control circuit with a first pole that, via a reading distributor, can be individually connected to first ends of bit lines by switching elements. The control circuit also has a second pole, which supplies power to an evaluator, and has a third pole that is connected to a reference voltage source. The readout circuit additionally includes a third voltage source having a voltage, which is approximately equal to the voltage of the first reading voltage source and which can be individually connected to second ends of the bit lines by means of switching elements. Finally, the readout circuit includes a fourth voltage source, which can be individually connected to second ends of the word lines by means of switching elements.

Abstract: A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

Abstract: A magnetoresistive memory includes magnetoresistive memory cells disposed in a plurality of rows and/or columns. A bit line is connected to first poles of the memory cells of a column. A word line is connected to second poles of the memory cells of a row. A read voltage source is separately connectable to first ends of the word lines. A voltage evaluator has at least one input that is separately connectable to first ends of the bit lines via an evaluation line. A first terminating resistor branches from the evaluation line. An impedance converter has an input connected to the evaluation line and has an output separately connectable to second ends of the bit lines and word lines. The invention also relates to a method of reading magnetoresistive memories.

Abstract: A magnetoresistive memory includes magnetoresistive memory cells disposed in a plurality of rows and/or columns. A bit line is connected to first poles of the memory cells of a column. A word line is connected to second poles of the memory cells of a row. A read voltage source is separately connectable to first ends of the word lines. A voltage evaluator has at least one input that is separately connectable to first ends of the bit lines via an evaluation line. A first terminating resistor branches from the evaluation line. An impedance converter has an input connected to the evaluation line and has an output separately connectable to second ends of the bit lines and word lines. The invention also relates to a method of reading magnetoresistive memories.

Abstract: A magnetic memory of the random access type (MRAM) contains a memory cell array formed of a multiplicity of memory cells. The memory cells are disposed in the form of a matrix at the points of intersection of word lines and sense lines and the logical data contents of which are defined by a magnetic state. The magnetic memory further contains an addressing circuit allocated to the word lines. The address circuit applies a read voltage to the word line of one or more selected memory cells, the data contents of which are to be read out. An evaluation circuit is provided that is allocated to the sense lines and receives and evaluates a sense signal corresponding to the data contents of the selected memory cell or memory cells. The evaluation circuit has a comparator circuit receiving a reference signal supplied by a reference element that is compared with the sense signal of the memory cell or memory cells to be read out.

Abstract: A sensor device for detecting the direction of an external magnetic field using a magnetoresistive sensor element, includes a GMR multilayer system having at least one soft magnetic measurement layer, at least one harder bias layer and at least one nonmagnetic intermediate layer disposed therebetween. The sensor element is to include at least two element parts, the multilayer systems of which are constructed on a common substrate and the magnetization directions of which include an angle which is unequal to 0° or unequal to 180° and the measurement signals of which are to be evaluated in common.

Abstract: A method for setting the magnetization of at least one bias layer of a magnetoresistive sensor element, the bias layer being part of an artificial antiferromagnetic system including at least one bias layer, at least one flux conducting layer and at least one coupling layer provided therebetween and coupling the two layers antiferromagnetically, includes the steps of heating or cooling the sensor element above or below a predetermined temperature, applying a magnetic setting field during and/or after the heating or cooling, switching off the setting field after a predetermined time, and returning the temperature to the initial temperature. A sensor configuration and a sensor substrate are also provided.

Abstract: Using a device (7) the magnetization distribution of the bias layer part (3) of a sensor element (E) is set. The sensor element has a thin-film structure (S) on a substrate (2) and has an increased magneto-resistive effect. The device (7) has an electrically conducting conductor part (L) and devices for positioning the conductor part (7) with regard to the sensor element (E). A predetermined setting current (I.sub.e) is carried over the conductor part (L), so the predetermined magnetization distribution can be set in a fixed manner in the bias layer part (3) of the sensor element (E).

Abstract: The magnetizations of the bias-layer parts of several sensor elements interconnected to form a bridge are to be set using the present device. These sensor elements are arranged on a common substrate and display an increased magneto-resistive effect. The present device has several conductive-track parts in such an arrangement that, with a predetermined position of the conductive-track parts with respect to the sensor elements of the bridge circuit, in each case one conductive-track part is associated with at least one sensor element. A set current of a predetermined direction and strength is conducted over each conductive-track part in such a manner that a predetermined direction of orientation of the magnetization can be set in fixed manner in the bias-layer part of the corresponding associated sensor element.

Abstract: A magnetoresistive sensor includes at least one measuring layer having a magnetization M.sub.M in the plane of the layer, and a bias layer having a fixed magnetization M.sub.B in the plane of the layer, which are exchange-decoupled from one another by an interlayer. To achieve magnetostatic decoupling of the measuring layer and the bias layer coupled anti-ferromagnetically in an "artificial anti-ferromagnet" to a magnetic layer through a coupling layer. In a preferred embodiment, the magnetizations of the measuring layer M.sub.M and of the bias layer M.sub.B are at least approximately orthogonal to each other. The resulting sensor has a linear characteristic and maximum sensitivity.

Abstract: A magnetoresistive sensor may include a layer system having at least one measuring layer exhibiting a magnetization in the plane of the layer. The magnetization depends inversely in at least one direction of an applied magnetic field. The layer system also includes at least one bias layer having a fixed magnetization in the plane of the layer. The at least one measuring layer and the at least one bias layer are exchange-decoupled from one another by an interlayer. In order to achieve magnetostatic decoupling of the measuring layer and the bias layer, the measuring layer is shorter than the bias layer at least in a direction parallel to the fixed magnetization. The ground state magnetization of the measuring layer and the magnetization of the bias layer are preferably at least approximately orthogonal to each other. In this manner, a magnetoresistive sensor is obtained which has a linear characteristic and maximum sensitivity.

Abstract: A device for determining the angular position of an object uses an MR sensor which is set up in a magnetic field, where one magnetic field component (H or H.sub.g) and a reference axis of the MR sensor can rotate relative to one another in a plane of rotation through an angle of rotation (.THETA. or .phi.) which has an unambiguous correlation to the angular position of the object; and the electric resistance of the MR sensor is an unambiguous function of this angle of rotation (.THETA. or .phi.). The MR sensor is designed with a giant MR layer system that contains at least one measurement layer with magnetization (M.sub.M) that can be rotated through the magnetic field (H or H.sub.g); the giant MR layer system also contains at least one biasing layer with a constant magnetization (M.sub.B); and the resistance of the giant MR layer system is a function of the angle (.alpha.) between these two magnetizations (M.sub.m and M.sub.B).