Abstract: Systems, devices and methods are provided herein for measuring a junction temperature of a transistor. A system includes a power inverter configured to supply power to a load, the power inverter including the transistor that is configured to switch between an on-state and an off-state and generate a load current during the on-state; a current sensor configured to measure the load current; a voltage transit slope detection circuit configured to determine a voltage transit slope corresponding to a voltage across the transistor during a turn-off period of the transistor during which the transistor is in the off-state; and a processing unit configured to determine the junction temperature of the transistor based on the measured load current and the determined voltage transit slope.

Abstract: Systems, devices and methods are provided herein for measuring a junction temperature of a transistor. A system includes a power inverter configured to supply power to a load, the power inverter including the transistor that is configured to switch between an on-state and an off-state and generate a load current during the on-state; a current sensor configured to measure the load current; a voltage transit slope detection circuit configured to determine a voltage transit slope corresponding to a voltage across the transistor during a turn-off period of the transistor during which the transistor is in the off-state; and a processing unit configured to determine the junction temperature of the transistor based on the measured load current and the determined voltage transit slope.