Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, C1-10 alkyl, C6-10 aryl, allyl, or halo; R3 and R4 may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R5 and R6 may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R5 and R6 is an alkoxysilane; wherein R8, R9, and R10 may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R7 may be hydrogen, C1-10 alkyl, C6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.

Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, alkyl, aryl, allyl, halo, or any combination thereof; R3 and R4 may each independently be hydrogen, a crosslinking functionality, a chromophore, or any combination thereof; R5 and R6 may each independently be hydrogen or an alkoxysilane group; R7 may each independently be hydrogen, alkyl, aryl, allyl, or any combination thereof; and n may be a positive integer; (b) a crosslinking component; and (c) an acid catalyst.

Abstract: A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A: (SiO1.5—Y—SiO1.5)x(R3SiO1.5)y ??(A) wherein x and y may satisfy the following relations: x is about 0.05 to about 0.9, y is about 0.05 to about 0.9, and x+y=1, R3 may be a C1-C12 alkyl group, and Y may be a linking group including a substituted or unsubstituted, linear or branched C1-C20 alkyl group, a C1-C20 group containing a chain that includes an aromatic ring, a heterocyclic ring, a urea group or an isocyanurate group, or a C2-C20 group containing one or more multiple bonds.

Abstract: Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each independently be alkyl acetoxy or oxime; and R4 may be hydrogen, alkyl, aryl or arylalkyl; and wherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.

Abstract: Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula I Si(OR1)(OR2)(OR3)R4 ??(I) wherein R1, R2 and R3 may each independently be an alkyl group, and R4 may be —(CH2)nR5, wherein R5 may be an aryl or a substituted aryl, and n may be 0 or a positive integer; and (b) at least one compound of Formula II Si(OR6)(OR7)(OR8)R9 ??(II) wherein R6, R7 and R8 may each independently an alkyl group or an aryl group; and R9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m ??(2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include (a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m ??(2) wherein R is a monovalent organic group and m is 0, 1 or 2; (b) a second polymer that includes at least one of the structures represented by Formulae 3-6; (c) an acid or base catalyst; and (d) an organic solvent. Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circiut devices produced by a method embodiment of the invention.