Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.

Abstract: An electronic device with a flash function and a driving method of a flash are provided. The electronic device includes a flash, an image sensor, and a processor. The flash has a red light source, a green light source, and a blue light source. The image sensor is configured to obtain a preview image of a current scene and outputting the raw data of the preview image. The processor obtains a red ratio value and a blue ratio value according to the current scene, and the processor determines the green brightness value, red brightness value and blue brightness value according to the red ratio value, the blue ratio value and an exposure sensitivity for obtaining the preview image. The processor drives the flash according to the calculated red brightness value, the calculated green brightness value, and the calculated blue brightness value.

Abstract: A method for image processing is provided. The method includes: capturing and receiving a first set of photo frames; storing the first set of photo frames into a storage unit; performing image processing on the first set of photo frames; and capturing and receiving a second set of photo frames. The performing image processing on the first set of photo frames and the capturing and receiving the second set of photo frames are performed simultaneously. The performing image processing on the first set of photo frames includes: reading the first set of photo frames from the storage unit; storing the first set of photo frames into a temporary storage unit; performing image processing on the first set of photo frames by using an image processing algorithm; and outputting a first output picture.

Abstract: According to the present disclosure, hybrid fins positioned between two different epitaxial source/drain features are recessed to prevent conductive material from entering interior air gaps of the hybrid fins, thus, preventing short circuit between source/drain contacts and gate electrodes. Recessing the hybrid fins may be achieved by enlarging mask during semiconductor fin etch back, therefore, without increasing production cost.