Patents by Inventor Hui-Fang Kao

Hui-Fang Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200230149
    Abstract: Provided is a long-acting method for preventing or treating glucose metabolism disorders that includes administering a beta-lactam compound or a pharmaceutically acceptable salt thereof to a subject in need thereof. The method for preventing or treating glucose metabolism disorders has a long-acting effect that lasts more than two days even after medication has been stopped.
    Type: Application
    Filed: January 21, 2020
    Publication date: July 23, 2020
    Inventors: Feng-Ling Lee, Lung-Jr Lin, Jyh-Shing Hsu, Cheng-Hsien Hsu, Yen-Chun Huang, Ya-Chien Huang, Chun-Tsung Lo, Hui-Fang Liao, Yu-Wen Liu, Yu-Chi Kao
  • Publication number: 20200230105
    Abstract: Provided is a long-acting method for preventing or treating glucose metabolism disorders that includes administering a beta-lactam compound or a pharmaceutically acceptable salt thereof to a subject in need thereof. The method for preventing or treating glucose metabolism disorders has a long-acting effect that lasts more than two days even after medication has been stopped.
    Type: Application
    Filed: January 21, 2020
    Publication date: July 23, 2020
    Inventors: Feng-Ling Lee, Lung-Jr Lin, Jyh-Shing Hsu, Cheng-Hsien Hsu, Yen-Chun Huang, Ya-Chien Huang, Chun-Tsung Lo, Hui-Fang Liao, Yu-Wen Liu, Yu-Chi Kao
  • Publication number: 20200152831
    Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 14, 2020
    Inventors: Yung-Fu CHANG, Hui-Fang KAO, Yi-Tang LAI, Shih-Chang LEE, Wen-Luh LIAO, Mei Chun LIU, Yao-Ru CHANG, Yi HISAO
  • Patent number: D725051
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: March 24, 2015
    Assignee: Epistar Corporation
    Inventors: Hui-Fang Kao, Chih-Chiang Lu, Tzu-Chieh Hsu, Yi-Ming Chen
  • Patent number: D764421
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: August 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Tzu-Chieh Hsu, Yao-Ning Chan, Yi-Ming Chen
  • Patent number: D818974
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: May 29, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Tzu-Chieh Hsu, Yao-Ning Chan, Yi-Ming Chen