Patents by Inventor Hui-Fang Kuo
Hui-Fang Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145641Abstract: A color conversion panel and a display device are provided. The color conversion panel includes an opaque substrate and a sapphire substrate. The opaque substrate includes a plurality of first pixel openings, a plurality of second pixel openings and a plurality of third pixel openings. The first pixel openings are filled with red quantum dot material, and the second pixel openings are filled with green quantum dot material. The sapphire substrate is on the opaque substrate. A first surface of the sapphire substrate that faces the opaque substrate has a plurality of first arc surfaces corresponding to the first pixel openings, a plurality of second arc surfaces corresponding to the second pixel openings, and a plurality of third arc surfaces corresponding to the third pixel openings.Type: ApplicationFiled: December 15, 2022Publication date: May 2, 2024Applicant: Industrial Technology Research InstituteInventors: Kai-Ling Liang, Wei-Hung Kuo, Hui-Tang Shen, Chun-I Wu, Suh-Fang Lin
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Patent number: 11934106Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.Type: GrantFiled: August 4, 2022Date of Patent: March 19, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Shu-Yen Liu, Hui-Fang Kuo, Chian-Ting Huang, Wei-Cyuan Lo, Yung-Feng Cheng, Chung-Yi Chiu
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Publication number: 20230384689Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.Type: ApplicationFiled: August 4, 2022Publication date: November 30, 2023Inventors: Shu-Yen LIU, Hui-Fang KUO, Chian-Ting HUANG, Wei-Cyuan LO, Yung-Feng CHENG, Chung-Yi CHIU
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Patent number: 9104833Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.Type: GrantFiled: May 26, 2014Date of Patent: August 11, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Fang Kuo, Ming-Jui Chen, Ting-Cheng Tseng, Cheng-Te Wang
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Patent number: 8930858Abstract: A smooth process is provided in the present invention. The smooth process is applied to a retarget layout, wherein the retarget layout is dissected into a plurality of segments. Furthermore, the retarget layout comprises a first original pattern, a first adding pattern and a second adding pattern. The smooth process includes changing the second adding pattern to a first smooth pattern. Latter, a second smooth pattern is added to extend from a bottom of the first smooth pattern and a tail portion of the first adding pattern is shrunk to a third smooth pattern. After the smooth process, an optical proximity correction process is applied to the smooth layout to produce an optical proximity correction layout.Type: GrantFiled: November 27, 2013Date of Patent: January 6, 2015Assignee: United Microelectronics Corp.Inventors: Hui-Fang Kuo, Ming-Jui Chen
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Publication number: 20140258946Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.Type: ApplicationFiled: May 26, 2014Publication date: September 11, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Fang Kuo, Ming-Jui Chen, Ting-Cheng Tseng, Cheng-Te Wang
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Patent number: 8778604Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.Type: GrantFiled: April 24, 2012Date of Patent: July 15, 2014Assignee: United Microelectronics Corp.Inventors: Hui-Fang Kuo, Ming-Jui Chen, Ting-Cheng Tseng, Cheng-Te Wang
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Patent number: 8701052Abstract: A method of optical proximity correction (OPC) includes the following steps. A layout pattern is provided to a computer system, and the layout pattern is classified into at least a first sub-layout pattern and at least a second sub-layout pattern. Then, at least an OPC calculation is performed respectively on the first sub-layout pattern and the second sub-layout pattern to form a corrected first sub-layout pattern and a corrected second sub-layout pattern. The corrected first sub-layout pattern/the corrected second sub-layout pattern and the layout pattern are compared to select a part of the corrected first sub-layout pattern/the corrected second sub-layout pattern as a first selected pattern/the second selected pattern, and the first selected pattern/the second selected pattern is further altered to modify the corrected first sub-layout pattern/the corrected second sub-layout pattern as a third sub-layout pattern/a fourth sub-layout pattern.Type: GrantFiled: January 23, 2013Date of Patent: April 15, 2014Assignee: United Microelectronics Corp.Inventors: Hui-Fang Kuo, Ming-Jui Chen, Cheng-Te Wang
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Patent number: 8627242Abstract: A method for making a photomask layout is provided. A first graphic data of a photomask is provided, wherein the first graphic data includes a first line with a first line end target, a second line with a second line end target and a hole, the first line is aligned with the second line, and the first line, the second line and the hole partially overlap with each other. Thereafter, a retarget step is performed to the first graphic data to obtain a second graphic data, wherein the retarget step includes moving the first line end target and the second line end target in opposite directions away from each other.Type: GrantFiled: January 30, 2013Date of Patent: January 7, 2014Assignee: United Microelectronics Corp.Inventors: Hui-Fang Kuo, Ming-Jui Chen, Cheng-Te Wang
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Publication number: 20130280645Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.Type: ApplicationFiled: April 24, 2012Publication date: October 24, 2013Inventors: Hui-Fang Kuo, Ming-Jui Chen, Ting-Cheng Tseng, Cheng-Te Wang
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Patent number: 8423923Abstract: An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.Type: GrantFiled: July 20, 2011Date of Patent: April 16, 2013Assignee: United Microelectronics Corp.Inventors: Chia-Wei Huang, Ming-Jui Chen, Ting-Cheng Tseng, Hui-Fang Kuo
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Publication number: 20130024824Abstract: An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.Type: ApplicationFiled: July 20, 2011Publication date: January 24, 2013Inventors: Chia-Wei Huang, Ming-Jui Chen, Ting-Cheng Tseng, Hui-Fang Kuo
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Patent number: 8042069Abstract: A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.Type: GrantFiled: August 7, 2008Date of Patent: October 18, 2011Assignee: United Microelectronics Corp.Inventors: Yu-Shiang Yang, Te-Hung Wu, Yung-Feng Cheng, Chuen Huei Yang, Hsiang-Yun Huang, Hui-Fang Kuo, Shih-Ming Kuo, Lun-Hung Chen
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Patent number: 7943274Abstract: A mask pattern correction method is provided. The method comprises the following steps. An original layout, which has a plurality of device patterns, is provided. Then, a simulation process is performed on the device patterns to correspondingly form a plurality of simulated patterns. Thereafter, the simulated patterns are analyzed to select a plurality of unsaturated patterns from the simulated patterns. Finally, the device patterns in the original layout corresponding to the unsaturated patterns respectively are rotated.Type: GrantFiled: October 7, 2008Date of Patent: May 17, 2011Assignee: United Microelectronics Corp.Inventors: Yu-Shiang Yang, Hui-Fang Kuo
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Patent number: 7797656Abstract: The present invention provides a method of checking and correcting a mask pattern. The method includes inputting a mask pattern, wherein the mask pattern includes at least a segment; inputting a process rule; selecting an edge, which fits in with an orientation model, as a target edge, wherein two ends of the target edge are an ahead direction and a behind direction, and the ahead direction and the behind direction each further comprise at least a checking point; identifying an interacting edge from the mask pattern along the checking directions; performing a process rule check to provide a correcting value; performing a first correction to provide a first bias to the target edge; and performing a second correction to provide a second bias to the interacting edge, wherein a sum of the first bias and the second bias equals the correcting value.Type: GrantFiled: January 25, 2008Date of Patent: September 14, 2010Assignee: United Microelectronics Corp.Inventors: Yu-Shiang Yang, Hui-Fang Kuo
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Publication number: 20100086862Abstract: A mask pattern correction method is provided. The method comprises the following steps. An original layout, which has a plurality of device patterns, is provided. Then, a simulation process is performed on the device patterns to correspondingly form a plurality of simulated patterns. Thereafter, the simulated patterns are analyzed to select a plurality of unsaturated patterns from the simulated patterns. Finally, the device patterns in the original layout corresponding to the unsaturated patterns respectively are rotated.Type: ApplicationFiled: October 7, 2008Publication date: April 8, 2010Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Shiang Yang, Hui-Fang Kuo
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Publication number: 20100036644Abstract: A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.Type: ApplicationFiled: August 7, 2008Publication date: February 11, 2010Inventors: Yu-Shiang Yang, Te-Hung Wu, Yung-Feng Cheng, Chuen Huei Yang, Hsiang-Yun Huang, Hui-Fang Kuo, Shih-Ming Kuo, Lun-Hung Chen
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Publication number: 20090193385Abstract: The present invention provides a method of checking and correcting a mask pattern. The method includes inputting a mask pattern, wherein the mask pattern includes at least a segment; inputting a process rule; selecting an edge, which fits in with an orientation model, as a target edge, wherein two ends of the target edge are an ahead direction and a behind direction, and the ahead direction and the behind direction each further comprise at least a checking point; identifying an interacting edge from the mask pattern along the checking directions; performing a process rule check to provide a correcting value; performing a first correction to provide a first bias to the target edge; and performing a second correction to provide a second bias to the interacting edge, wherein a sum of the first bias and the second bias equals the correcting value.Type: ApplicationFiled: January 25, 2008Publication date: July 30, 2009Inventors: Yu-Shiang Yang, Hui-Fang Kuo