Patents by Inventor Hui-Feng CHEN

Hui-Feng CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same
    Publication number: 20240087951
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Chun-Hao Kung, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
  • Radiofrequency device
    Patent number: 11380627
    Abstract: A radiofrequency device includes a semiconductor substrate, an inductor structure, a shielding structure, and a mask pattern. The semiconductor substrate includes a first region and a second region. The inductor structure is disposed on the first region of the semiconductor substrate. The shielding structure is disposed on the first region of the semiconductor substrate and located between the inductor structure and the semiconductor substrate in a vertical direction. The mask pattern is disposed on the semiconductor substrate. A first portion of the mask pattern is disposed on the shielding structure and directly contacts the shielding structure, and a top surface of the shielding structure is completely covered by the first portion of the mask pattern.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: July 5, 2022
    Assignee: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Hui Feng Chen, Guang Yang, Jinjian Ouyang, Linshan Yuan, Chin-Chun Huang, Wen Yi Tan
  • CMP polishing pad having edge exclusion region of offset concentric groove pattern
    Patent number: 9409276
    Abstract: The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: August 9, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Ching-Ming Tsai, Shi-Wei Cheng, Jia-Cheng Hsu, Kun-Shu Yang, Hui-Feng Chen, Gregory Gaudet, Sheng-Huan Liu
  • CMP POLISHING PAD HAVING EDGE EXCLUSION REGION OF OFFSET CONCENTRIC GROOVE PATTERN
    Publication number: 20150111476
    Abstract: The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 23, 2015
    Inventors: Ching-Ming TSAI, Shi-Wei CHENG, Jia-Cheng HSU, Kun-Shu YANG, Hui-Feng CHEN, Gregory GAUDET, Sheng-Huan LlU