Abstract: Provided are device with stepped isolation regions and methods for fabricating the same. An exemplary method includes forming mask segments over a semiconductor material; etching the semiconductor material to form first trenches, wherein the first trenches have a first trench maximum width and a first trench depth; forming a coating in the first trenches, wherein the coating has a coating depth less than the first trench depth, and wherein uncovered portions of the semiconductor material extend from the coating to the patterned masks; performing an etch process to etch the mask segments and the uncovered portions of the semiconductor material to form second trenches over the first trenches, wherein the second trenches have a second minimum width greater than the first maximum width and a second depth less than the first depth; and removing the coating from the first trenches.

Abstract: A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.

Abstract: An LED die structure and a method for manufacturing the bottom terminal of the LED die structure, wherein the LED die includes a substrate, a light-emitting layer positioned at the top of the substrate, at least one bottom terminal positioned at the bottom of the substrate, at least one top terminal positioned at the top of the light-emitting layer, and at least one side terminal positioned at the side of the bottom of the substrate, and wherein the method comprises the following steps: a) recessing the bottom side of the wafer to a predetermined height when the LED is formed in a wafer type; b) coating the metal material to the bottom of the wafer and to the inside of the recesses; and c) dividing the wafer along the recesses into dies. In this way, the bottom terminal and the side terminal are formed at the bottom of the substrate of the die. Moreover, the LED die structure enhances the quality of the electric connection between the die-bonding paste and the LED die.

Abstract: A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.

Abstract: A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side of a first substrate. Then, a second layered structure comprising at least a second substrate is provided. Then, the two-layered structures are wafer-bonded together, with the top side of the second layered structure interfacing with the top side of said first layered structure. The first metallic layer functions as a reflective mirror, which is made of a pure metal or a metal nitride to achieve superior reflectivity, and whose reflective surface does not participate in the wafer-bonding process directly.

Abstract: An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal or a metal nitride for achieving superior reflectivity. The non-alloy ohmic contact layer is interposed between the metallic layer and the light generating structure so as to achieve the required ohmic contact. To prevent the metallic layer from intermixing with the non-alloy ohmic contact layer and to maintain the flatness of the reflective surface of the first metallic layer, an optional dielectric layer is interposed between the metallic layer and the non-alloy ohmic contact layer.

Abstract: A LED structure with enhanced side-emitting capability is provided. An embodiment of The LED structure comprises, on top of a substrate, a metallic layer, a non-alloy ohmic contact layer, a thick transparent layer, a light generating structure, sequentially arranged in the this order from bottom to top. The metallic layer functions a reflective mirror and is made of a pure metal or a metal nitride for superior reflectivity. The non-alloy ohmic contact layer is interposed between the light generating structure and the metallic layer so as to achieve the required low resistance electrical conduction. The thick transparent layer extracts a significant portion of the light to the sides of the LED structure. The thick transparent layer, made of a semiconductor material or a dielectric material having an refractive index between 1.5 to 3.5, could be located either above, below or both above and below the light generating structure.

Abstract: A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side of a first substrate. Then, a second layered structure comprising at least a second substrate is provided. Then, the two-layered structures are wafer-bonded together, with the top side of the second layered structure interfacing with the top side of said first layered structure. The first metallic layer functions as a reflective mirror, which is made of a pure metal or a metal nitride to achieve superior reflectivity, and whose reflective surface does not participate in the wafer-bonding process directly.

Abstract: An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal or a metal nitride for achieving superior reflectivity. The non-alloy ohmic contact layer is interposed between the metallic layer and the light generating structure so as to achieve the required ohmic contact. To prevent the metallic layer from intermixing with the non-alloy ohmic contact layer and to maintain the flatness of the reflective surface of the first metallic layer, an optional dielectric layer is interposed between the metallic layer and the non-alloy ohmic contact layer.