Abstract: Disclosed are imidazole and thiazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure and pharmaceutically acceptable salts, prodrugs and N-oxides thereof (and solvates and hydrates thereof), wherein X, A, Z, R1 and R? are as described herein. In certain embodiments, a compound disclosed herein inhibits TGF-?, and can be used to treat disease by blocking TGF-? signaling.

Abstract: Disclosed is an anti-counterfeiting printed material including: a background part for analyzing a distribution of Cyan Magenta Yellow Black (C/M/Y/K) after performing first color separation of an original image into C/M/Y/K, and printing the original image as C/M/Y/K lines each having an included angle preset according to each distribution; and a latent image part formed in a first region of the background part, and printed with the number of C/M/Y/K lines in a ratio different from the number of C/M/Y/K lines of the background part according to each distribution by performing secondary color separation, into C/M/Y/K, of a second region spaced apart from the first region by a preset distance.

Abstract: Disclosed is a pharmaceutical composition for preventing or treating severe acute respiratory syndrome coronavirus 2 infection disease, the composition comprising a compound represented by a Chemical Formula 1, or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: Disclosed is a pharmaceutical composition for preventing or treating severe acute respiratory syndrome coronavirus 2 infection disease, the composition comprising a compound represented by a Chemical Formula 1, or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: The present disclosure provides a photovoltaic-photothermal reaction complementary full-spectrum solar utilization system, comprising: a waveband thermal reactor having a reactant flow channel and a reaction chamber therein, a photovoltaic cell attached to a surface of the waveband thermal reactor, and a full spectrum concentrator configured to concentrate full spectrum sunlight onto a surface of the photovoltaic cell, wherein the full spectrum concentrating device concentrates the full spectrum sunlight onto a upper surface of the opaque or transmissive photovoltaic cell, wherein a portion of the sunlight is converted into electric energy and another portion of the sunlight is converted into thermal energy, and wherein the thermal energy is utilized by the waveband thermal reactor to preheat reactant(s) in the reaction chamber and to make a portion of the reactant(s) to undergo an endothermic chemical reaction such that the thermal energy is stored as chemical energy.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.

Abstract: The present disclosure provides a photovoltaic-photothermal reaction complementary full-spectrum solar utilization system, comprising: a waveband thermal reactor having a reactant flow channel and a reaction chamber therein, a photovoltaic cell attached to a surface of the waveband thermal reactor, and a full spectrum concentrator configured to concentrate full spectrum sunlight onto a surface of the photovoltaic cell, wherein the full spectrum concentrating device concentrates the full spectrum sunlight onto a upper surface of the opaque or transmissive photovoltaic cell, wherein a portion of the sunlight is converted into electric energy and another portion of the sunlight is converted into thermal energy, and wherein the thermal energy is utilized by the waveband thermal reactor to preheat reactant(s) in the reaction chamber and to make a portion of the reactant(s) to undergo an endothermic chemical reaction such that the thermal energy is stored as chemical energy.

Abstract: Disclosed is an anti-counterfeiting printed material including: a background part for analyzing a distribution of Cyan Magenta Yellow Black (C/M/Y/K) after performing first color separation of an original image into C/M/Y/K, and printing the original image as C/M/Y/K lines each having an included angle preset according to each distribution; and a latent image part formed in a first region of the background part, and printed with the number of C/M/Y/K lines in a ratio different from the number of C/M/Y/K lines of the background part according to each distribution by performing secondary color separation, into C/M/Y/K, of a second region spaced apart from the first region by a preset distance.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.

Abstract: Disclosed are imidazole and thiazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure and pharmaceutically acceptable salts, prodrugs and N-oxides thereof (and solvates and hydrates thereof), wherein X, A, Z, R1 and R? are as described herein. In certain embodiments, a compound disclosed herein inhibits TGF-?, and can be used to treat disease by blocking TGF-? signaling.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.

Abstract: Disclosed are imidazole and thiazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure and pharmaceutically acceptable salts, prodrugs and N-oxides thereof (and solvates and hydrates thereof), wherein X, A, Z, R1 and R? are as described herein. In certain embodiments, a compound disclosed herein inhibits TGF-?, and can be used to treat disease by blocking TGF-? signaling.