Abstract: A color conversion panel and a display device are provided. The color conversion panel includes an opaque substrate and a sapphire substrate. The opaque substrate includes a plurality of first pixel openings, a plurality of second pixel openings and a plurality of third pixel openings. The first pixel openings are filled with red quantum dot material, and the second pixel openings are filled with green quantum dot material. The sapphire substrate is on the opaque substrate. A first surface of the sapphire substrate that faces the opaque substrate has a plurality of first arc surfaces corresponding to the first pixel openings, a plurality of second arc surfaces corresponding to the second pixel openings, and a plurality of third arc surfaces corresponding to the third pixel openings.

Abstract: A display device and a projector are provided. The display device includes a pixel light-emitting panel and multiple color conversion panels. The pixel light-emitting panel includes an N1 number of light-emitting pixel units distributed in an array, and the light-emitting pixel units are driven to emit light through a driver. A first color conversion panel includes an N2 number of first color pixels and an N3 number of first transparent pixels. The first color pixels and the first transparent pixels are disposed relative to the light-emitting pixel units. A second color conversion panel includes an N4 number of second color pixels and an N5 number of second transparent pixels. The second color pixels and the second transparent pixels are disposed relative to the light-emitting pixel units. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first color pixels and the second transparent pixels to achieve the color conversion.

Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.