Abstract: A bonding apparatus includes a stage supporting a substrate, a first bonding head at a first side of the stage, the first bonding head to pick up a first chip and to bond the picked-up first chip onto the substrate, a second bonding head at a second side of the stage, the second bonding head to pick up a second chip and to bond the picked-up second chip onto the substrate, and a first image acquisition unit over a movement path of the stage to acquire an image of the stage.

Abstract: A bonding stage is provided. The bonding stage includes a first heater disposed under a first region of a substrate having a plurality of semiconductor chips disposed thereon, a second heater disposed under a second region different from the first region of the substrate, a cooler disposed under the first heater and the second heater and blocking heat of the first heater and heat of the second heater from being transferred to lower portions of the first heater and the second heater, and a thin plate disposed on the first heater and the second heater to support the substrate and transferring the heat of the first heater and the heat of the second heater to the substrate, wherein the first heater and the second heater are independently operated.

Abstract: A bonding apparatus includes a stage supporting a substrate, a first bonding head at a first side of the stage, the first bonding head to pick up a first chip and to bond the picked-up first chip onto the substrate, a second bonding head at a second side of the stage, the second bonding head to pick up a second chip and to bond the picked-up second chip onto the substrate, and a first image acquisition unit over a movement path of the stage to acquire an image of the stage.

Abstract: A bonding stage is provided. The bonding stage includes a first heater disposed under a first region of a substrate having a plurality of semiconductor chips disposed thereon, a second heater disposed under a second region different from the first region of the substrate, a cooler disposed under the first heater and the second heater and blocking heat of the first heater and heat of the second heater from being transferred to lower portions of the first heater and the second heater, and a thin plate disposed on the first heater and the second heater to support the substrate and transferring the heat of the first heater and the heat of the second heater to the substrate, wherein the first heater and the second heater are independently operated.

Abstract: A semiconductor manufacturing apparatus may include: a pickup unit configured to pick up a chip in a first region of the semiconductor manufacturing apparatus; a bonding head configured to receive the picked-up chip and configured to move from the first region to a top of a circuit board in a second region of the semiconductor manufacturing apparatus; and/or an optical unit configured to detect a bonding position on the circuit board while moving from the first region to the second region. A semiconductor manufacturing apparatus may include: a bonding head including a heater for heating a chip and bonding the chip onto a circuit board; and/or a cooling block, adjacent to the heater, through which cooling liquid flows. The cooling liquid may be removed from the cooling block while the heater generates heat. The cooling liquid may be supplied to the cooling block while the heater is cooled.

Abstract: A semiconductor chip bonding apparatus includes a bonding head to adsorptively pick up a semiconductor chip, a bonding stage supporting a substrate, the semiconductor chip to be bonded to the substrate on the bonding stage, a first camera to capture an image of the semiconductor chip and to obtain positional information regarding the semiconductor chip, a second camera to capture an image of the substrate and to obtain positional information regarding the substrate, a correction device structure at a first side surface of the bonding stage, the correction device structure including a correction substrate and at least one correction chip, and a bonding controller to control pick up of the at least one correction chip by the bonding head, mounting of the at least one correction chip on the correction substrate, and correcting of a bonding position.

Abstract: A semiconductor chip bonding apparatus includes a bonding head to adsorptively pick up a semiconductor chip, a bonding stage supporting a substrate, the semiconductor chip to be bonded to the substrate on the bonding stage, a first camera to capture an image of the semiconductor chip and to obtain positional information regarding the semiconductor chip, a second camera to capture an image of the substrate and to obtain positional information regarding the substrate, a correction device structure at a first side surface of the bonding stage, the correction device structure including a correction substrate and at least one correction chip, and a bonding controller to control pick up of the at least one correction chip by the bonding head, mounting of the at least one correction chip on the correction substrate, and correcting of a bonding position.

Abstract: A semiconductor manufacturing apparatus may include: a pickup unit configured to pick up a chip in a first region of the semiconductor manufacturing apparatus; a bonding head configured to receive the picked-up chip and configured to move from the first region to a top of a circuit board in a second region of the semiconductor manufacturing apparatus; and/or an optical unit configured to detect a bonding position on the circuit board while moving from the first region to the second region. A semiconductor manufacturing apparatus may include: a bonding head including a heater for heating a chip and bonding the chip onto a circuit board; and/or a cooling block, adjacent to the heater, through which cooling liquid flows. The cooling liquid may be removed from the cooling block while the heater generates heat. The cooling liquid may be supplied to the cooling block while the heater is cooled.