Abstract: A liquid crystal composition includes a liquid crystal compound having a formula (I), where R1 and R2 are independently selected from the group consisting of H, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 alkoxyl, C2-C10 alkenyloxy, C1-C10 ether, C1-C10 aldehyde, C1-C10 ketone, and C1-C10 ester; A is selected from the group consisting of and X1, X2, X3 and X4 are independently selected from the group consisting of H, halogen group, —CF3, —CHF2, —CH2F, —OCF3, —OCHF2 and —OCH2F, at least one of X1, X2, X3 and X4 being halogen group, —CF3, —CHF2, —CH2F, —OCF3, —OCHF2 or —OCH2F.

Abstract: A liquid crystal composition includes a liquid crystal compound having a formula (I), where R1 and R2 are independently selected from the group consisting of H, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 alkoxyl, C2-C10 alkenyloxy, C1-C10 ether, C1-C10 aldehyde, C1-C10 ketone, and C1-C10 ester; A is selected from the group consisting of and X1, X2, X3 and X4 are independently selected from the group consisting of H, halogen group, —CF3, —CHF2, —CH2F, —OCF3, —OCHF2 and —OCH2F, at least one of X1, X2, X3 and X4 being halogen group, —CF3, —CHF2, —CH2F, —OCF3, —OCHF2 or —OCH2F.

Abstract: A channel switching module is disclosed. The channel switching module includes a server host, an audio/video player and a display device. The server host has a controller for respectively connecting and controlling an audio/video processor, a signal transmission module and a channel switching unit, wherein the audio/video processor encodes/decodes to the internal audio/video files, and the channel switching unit switches channels, and the signal transmission module transmits out a selected audio/video signal. The audio/video player has a signal transmission module for receiving the audio/video signal transmitted by the server host and a controller for connecting and controlling an executing unit and a display device for playing.

Abstract: The present invention provides a method of fabricating fully dielectric isolated silicon (FDIS) by anodizing a buried doped silicon layer through trenches formed between active areas to form a porous silicon layer; oxidizing the porous silicon layer through the trenches to form a buried oxide layer; and by depositing a dielectric in the trenches. The process begins by forming a buried doped layer in a silicon substrate defining a silicon top layer over the conductive buried doped layer. The silicon top layer and the buried doped layer are patterned to form trenches that extend into but not through the buried doped layer. The trenches define isolated silicon regions. The buried doped layer is anodized to form a porous silicon layer. The porous silicon layer is converted into a buried oxide layer by oxidation. The oxidation step also forms a liner oxide layer on the tops and sidewalls of the isolated silicon regions.