Abstract: Embodiments of the present disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate provided with a device region, a first isolation region, and a second isolation region disposed between the device region and the first isolation region. The second isolation region is further provided with a first semiconductor material region adjacent to the first isolation region.

Abstract: Provided are a method for manufacturing a semiconductor structure and a semiconductor structure. The method includes: providing a substrate provided thereon with active pillars and isolation layers arranged at intervals along a first direction and extending along a second direction; forming first grooves exposing top surfaces and parts of side surfaces of the active pillars; forming a filling material layer exposing at least the top surfaces of the active pillars in the first grooves; forming a metal layer directly covering at least the top surfaces of the active pillars; forming conductive structures extending along a third direction on the active pillars; removing at least the filling material layer to expose the first grooves; depositing a first dielectric layer at least on the side surfaces of the first grooves to form second grooves; and forming a second dielectric layer filling the second grooves.