Abstract: A method of fabricating a memory device is described. Generally, the method includes forming a channel from a semiconducting material overlying a surface of a substrate, and forming dielectric stack on the channel. A first cap layer is formed over the dielectric stack, and a second cap layer including a nitride formed over the first cap layer. The first and second cap layers and the dielectric stack are then patterned to form a gate stack of a device. The second cap layer is removed and an oxidation process performed to form a blocking oxide over the dielectric stack, wherein the oxidation process consumes the first cap layer. Other embodiments are also described.

Abstract: A method of fabricating a memory device is described. Generally, the method includes forming a channel from a semiconducting material overlying a surface of a substrate, and forming dielectric stack on the channel. A first cap layer is formed over the dielectric stack, and a second cap layer including a nitride formed over the first cap layer. The first and second cap layers and the dielectric stack are then patterned to form a gate stack of a device. The second cap layer is removed and an oxidation process performed to form a blocking oxide over the dielectric stack, wherein the oxidation process consumes the first cap layer. Other embodiments are also described.

Abstract: A method of fabricating a memory device is described. Generally, the method includes: forming on a surface of a substrate a dielectric stack including a tunneling dielectric and a charge-trapping layer overlying the tunneling dielectric; depositing a first cap layer comprising an oxide over the dielectric stack; forming a second cap layer comprising a nitride over the first cap layer; patterning the first and second cap layers and the dielectric stack to form a gate stack of a memory device; removing the second cap layer; and performing an oxidation process to form a blocking oxide over the charge-trapping layer, wherein the oxidation process consumes the first cap layer. Other embodiments are also described.

Abstract: A method of fabricating a memory device is described. Generally, the method includes: forming on a surface of a substrate a dielectric stack including a tunneling dielectric and a charge-trapping layer overlying the tunneling dielectric; depositing a first cap layer comprising an oxide over the dielectric stack; forming a second cap layer comprising a nitride over the first cap layer; patterning the first and second cap layers and the dielectric stack to form a gate stack of a memory device; removing the second cap layer; and performing an oxidation process to form a blocking oxide over the charge-trapping layer, wherein the oxidation process consumes the first cap layer. Other embodiments are also described.