Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: A pump structure for dispenser includes a base having a space defined therein and passing therethrough. The base has a vertical groove axially defined in an outer periphery thereof and a plurality of horizontal grooves parallelly defined in the outer periphery thereof and communicated with the horizontal grooves. A base ring is sleeved on the base. The base ring has a protrusion extending from an inner periphery thereof for slidably moving in the vertical groove and the horizontal groove. A saddle head is movably sleeved on the base. An upper valve set is mounted in a pathway in the saddle head and a lower valve set is mounted in the space in the base.

Abstract: A dispenser for adjusting rationing liquid includes a base having a space defined therein. A saddle head is movably sleeved on the base. The saddle head has a pathway defined therein and passing therethrough. The saddle head has a piston movably received in the space. The piston has an outer periphery abutting against an inner periphery of the space. A spring is sleeved on the base. An upper valve set is mounted in the pathway and a lower valve set is mounted in the space in the base.

Abstract: A refill pouch includes a head member and a pouch member connected with the head member. The head member has a threaded portion and a disc portion formed thereon. The threaded portion has one end connected with a top side of the disc portion. The threaded portion adapts to be threadedly connected with a pump head. The head member has a through hole defined therein and extending through the threaded portion and the disc portion. The pouch member is securely connected with a bottom side of the disc portion. The pouch member has an opening defined in a top thereof and located corresponding to the through hole for communicating with the through hole. The pouch member has a wall thickness gradually decreasing from the top to a bottom thereof.

Abstract: A method of fabricating a flash memory includes providing a semiconductor substrate with STIs and an active area between two adjacent STIs along a first direction; successively forming a floating-gate insulating layer, a conductive layer, a dielectric layer, a control gate, and a cap layer on the semiconductor substrate; forming spacers on the sidewalls of the cap layer and the control gate; removing the dielectric layer, the conductive layer, and the floating-gate insulating layer not covered by the spacers and the cap layer; performing a selective epitaxial growth process to form an epitaxial layer on the exposed semiconductor substrate in the active area; and forming a source in the epitaxial layer and the semiconductor substrate in the active area.

Abstract: A memory device with redundancy arrays, including row word lines and column selective lines respectively selected by a plurality of row address signals and column address signals. A bank includes a first block and a second block separately driven by the different logic values of the first row address signal. In addition, a plurality of pairs of odd arrays and even arrays and a plurality of corresponding spare rows and spare columns are located in the first and second blocks, wherein the odd arrays and the even arrays are separately driven by the different logic values of the second row address signal, and the other row address signals are used to select the row word lines located in the odd arrays or even arrays. If the selected row word line is a defective row, it will be replaced by one of the spare rows, and if the column selective line selected by a plurality of column address signals is a defective column, it will be replaced by one of the spare columns.

Abstract: Methods, additives and compositions for selectively temporarily sealing high temperature permeable formations penetrated by well bores. The compositions are formed by dispersing a granular additive into an aqueous medium which contains a galactomannan gum treated with potassium pyroantimonate whereby the hydration rate of the gum is retarded at temperatures below about 120.degree. F. but increases at temperatures thereabove. When the composition is introduced into a high temperature permeable formation, it is heated whereby the treated galactomannan gum hydrates and the composition is formed into a stiff gel.