Abstract: An over-current protection device comprises a PTC material layer, a first electrode layer, a second electrode layer, a first side electrode and a second side electrode. The PTC material layer is sandwiched between the first electrode layer and the second electrode layer. The first side electrode and the second side electrode are respectively disposed on two opposite side surfaces of the PTC material layer, and are respectively connected to the first electrode layer and the second electrode layer. Furthermore, the first side electrode and the second side electrode are respectively extended to four surfaces adjacent and perpendicular to the two side surfaces.

Abstract: An insulation covering structure for a semiconductor element with a single die dimension includes: a semiconductor element with a single die dimension and an insulation covering layer. The semiconductor element has a front side surface, a rear side surface, a left side surface, a right side surface, a bottom surface, and a top surface. The top surface of the semiconductor element has two metal pads. The insulation covering layer covers the front side surface, the rear side surface, the left side surface, the right side surface, and the bottom surface of the semiconductor element. A manufacturing process for covering the semiconductor element with a single die dimension is also disclosed.

Abstract: An over-current protection device comprises a PTC material layer, a first electrode layer, a second electrode layer, a first side electrode and a second side electrode. The PTC material layer is sandwiched between the first electrode layer and the second electrode layer. The first side electrode and the second side electrode are respectively disposed on two opposite side surfaces of the PTC material layer, and are respectively connected to the first electrode layer and the second electrode layer. Furthermore, the first side electrode and the second side electrode are respectively extended to four surfaces adjacent and perpendicular to the two side surfaces.

Abstract: A laminated variable resistor comprises a main body, internal electrodes extending along two side edges of the main body into the main body, terminal electrodes disposed on the two ends of the main body. The mole percentage of the oxide in overlapping active regions between opposite internal electrodes is reduced and the reduced portion is replaced by a metal selected from gold (Au), silver (Ag), palladium (Pd), platinum (Pt), rhodium (Rh), or the alloy of any two of such metals.

Abstract: An insulation covering structure for a semiconductor element with a single die dimension includes: a semiconductor element with a single die dimension and an insulation covering layer. The semiconductor element has a front side surface, a rear side surface, a left side surface, a right side surface, a bottom surface, and a top surface. The top surface of the semiconductor element has two metal pads. The insulation covering layer covers the front side surface, the rear side surface, the left side surface, the right side surface, and the bottom surface of the semiconductor element. A manufacturing process for covering the semiconductor element with a single die dimension is also disclosed.

Abstract: The present invention relates to a RC filtering device, consists of: a lower substrate, a first intermediate substrate, a second intermediate substrate and an upper substrate. On top surface of the lower substrate is a cross form electrode layer. At both ends of the electrode layer in one direction forms a pair of air gaps to function as over voltage protection. The first intermediate substrate is formed above the lower substrate also has a pair of grooves corresponding to said air gaps, and on the top surface of the second intermediate layer, there is a transmission wire. The said transmission wire is formed with metallic layer at its both ends and the metallic oxide layer made with electrical resistance, this transmission wire and the electrode layer on the lower substrate form an RC filtering device.

Abstract: Enclosed is a multilayer zinc oxide (ZnO) varistor having a body portion, internal electrodes extending from both sides to the interior of the body portion respectively, and terminal electrodes disposed at both sides of the body portion. The multilayer zinc oxide is characterized in that: the components of said body portion include at least 90 mole % ZnO, 0.1 to 5.0 mole % antimony oxide functional additives, 0.01 to 1.0 mole % praseodymium oxide functional additives, and 0.01 to 10.0 wt. % glass; the sum amount of these metal oxides is less than 99.95 mole %.

Abstract: A laminated variable resistor comprises a main body, internal electrodes extending along two side edges of the main body into the main body, terminal electrodes disposed on the two ends of the main body. The mole percentage of the oxide in overlapping active regions between opposite internal electrodes is reduced and the reduced portion is replaced by a metal selected from gold (Au), silver (Ag), palladium (Pd), platinum (Pt), rhodium (Rh), or the alloy of any two of such metals.