Patents by Inventor Hui Ni Grace Fong

Hui Ni Grace Fong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Extreme ultraviolet mask blank defect reduction
    Patent number: 11275300
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: March 15, 2022
    Assignee: Applied Materials Inc.
    Inventors: Sai Abhinand, Shuwei Liu, Hui Ni Grace Fong, Ke Chang, Vibhu Jindal
  • Extreme Ultraviolet Mask Absorber Materials
    Publication number: 20200026178
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from an alloy of tantalum and nickel.
    Type: Application
    Filed: July 16, 2019
    Publication date: January 23, 2020
    Inventors: Vibhu Jindal, Hui Ni Grace Fong, Binni Varghese, Shuwei Liu, Abbas Rastegar
  • Extreme Ultraviolet Mask Blank Defect Reduction
    Publication number: 20200012183
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.
    Type: Application
    Filed: July 3, 2019
    Publication date: January 9, 2020
    Inventors: Sai Abhinand, Shuwei Liu, Hui Ni Grace Fong, Ke Chang, Vibhu Jindal