Abstract: The present disclosure provides a display panel, including a display area and a bezel area surrounding the display area, edge lines of the display area and the bezel area are arc edge lines and matched with each other in shape, the display panel includes a peripheral circuit and peripheral signal lines, which are distributed in the bezel area, and further includes an array substrate and a color filter substrate which are not overlapped at edges thereof on a first side, and in a portion of the bezel area where the edges on the first side are not located, a distance between the peripheral signal line, closest to an outer edge of the bezel area, and the outer edge of the bezel area is in a range of 0.35±0.2 micrometers, the outer edge of the bezel area is an edge of the bezel area away from the display area.

Abstract: Provided are a method, system and device for global path planning for an unmanned vehicle in an off-road environment. The method includes: obtaining satellite elevation data and a satellite remote sensing image of a current off-road environment; constructing a digital elevation model (DEM); determining slope and land surface relief of each grid in the current off-road environment; performing gray processing on the satellite remote sensing image to obtain grayscale values of the grids; determining traversal costs of the grids corresponding to different ground types; constructing a global grid map based on the slope and the land surface relief of each grid, as well as the traversal costs corresponding to the different ground types; determining a rugged terrain potential field and path costs; and searching for paths using a Bresenham's line algorithm and Theta* algorithm based on the rugged terrain potential field and the path costs, to generate a global path.

Abstract: The present disclosure provides compounds for modulating calcitonin receptor and/or amylin receptor activity, as well as pharmaceutical compositions comprising the compounds disclosed herein. Also provided are methods for treating a calcitonin receptor and/or amylin receptor associated disease or disorder.

Abstract: Described herein is a dichloroacetic acid conjugating diphenyl ethane compound, and a preparation method and an application thereof. The dichloroacetic acid conjugating diphenyl ethane compound has a stable structure, low toxicity, a simple preparation process and a high yield, without necessity to preserve it in a dark place, and has anti-tumor activity against a variety of tumor cells cultured in vitro, and the anti-tumor effect in vivo.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Disclosed is a fast lock phase-locked loop circuit for avoiding cycle slip, which belongs to the technical field of integrated circuits. The fast lock phase-locked loop circuit includes a phase frequency detector, a charge pump, an intermediate stage circuit, a loop filter, a voltage-controlled oscillator and a frequency divider. The phase frequency detector, the charge pump, the intermediate stage circuit, the loop filter and the voltage-controlled oscillator are connected in sequence; an output OUT end of the voltage-controlled oscillator is connected with an input IN end of frequency divider, and an output OUT end of the frequency divider is connected with an input IN end of the phase frequency detector to form a feedback path. The output clock frequency of the VCO and the expected frequency, i.e., the reference clock frequency and the feedback clock frequency, are prevented from being too close when the loop is started.

Abstract: Disclosed is a zero-delay phase-locked loop frequency synthesizer based on multi-stage synchronization, which belongs to the technical field of integrated circuits. The zero-delay phase-locked loop frequency synthesizer comprises: a phase frequency detector, a charge pump, a loop pass filter, a voltage control oscillator and a multi-stage synchronization divider, wherein the phase frequency detector, the charge pump, the loop pass filter and the voltage control oscillator are connected in sequence; an output OUT of the voltage control oscillator is connected to an input IN of the multi-stage synchronization divider; and an output OUT of the multi-stage synchronization divider is connected to an input IN of the phase frequency detector, so as to form a feedback path.

Abstract: Disclosed is a fast lock phase-locked loop circuit for avoiding cycle slip, which belongs to the technical field of integrated circuits. The fast lock phase-locked loop circuit includes a phase frequency detector, a charge pump, an intermediate stage circuit, a loop filter, a voltage-controlled oscillator and a frequency divider. The phase frequency detector, the charge pump, the intermediate stage circuit, the loop filter and the voltage-controlled oscillator are connected in sequence; an output OUT end of the voltage-controlled oscillator is connected with an input IN end of frequency divider, and an output OUT end of the frequency divider is connected with an input IN end of the phase frequency detector to form a feedback path. The output clock frequency of the VCO and the expected frequency, i.e., the reference clock frequency and the feedback clock frequency, are prevented from being too close when the loop is started. (FIG.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Disclosed is a zero-delay phase-locked loop frequency synthesizer based on multi-stage synchronization, which belongs to the technical field of integrated circuits. The zero-delay phase-locked loop frequency synthesizer comprises: a phase frequency detector, a charge pump, a loop pass filter, a voltage control oscillator and a multi-stage synchronization divider, wherein the phase frequency detector, the charge pump, the loop pass filter and the voltage control oscillator are connected in sequence; an output OUT of the voltage control oscillator is connected to an input IN of the multi-stage synchronization divider; and an output OUT of the multi-stage synchronization divider is connected to an input IN of the phase frequency detector, so as to form a feedback path.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

Abstract: Method for manufacturing fluoro(hydro)carbon-substituted silicon or germanium quantum dots which comprises the steps of:—reacting a Zintl salt or intermetallic compound of post-transition metals or metalloids of silicon or germanium with a halogen-containing oxidizing agent to form halide-terminated silicon or germanium quantum dots,—reacting the halide-terminated silicon or germanium quantum dots with a fluoro(hydro)carbon agent selected from the group of metal-fluoro (hydro)carbon compounds of the formula MRq, wherein M is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, q is an integer which corresponds to the valence of the metal, and R is CFnHm-fluoro/hydro-carbon, wherein n is 1 or 2, m is 0 or 1, and the total of n and m is 2, wherein each R may be the same or different, metal-fluoro (hydro)carbon halide compounds of the formula NQaRp wherein N is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, Q is a halogen selected fr

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

Abstract: A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

Abstract: A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.