Abstract: A packet transmission method is provided. The packet transmission method may be applied to an apparatus. The packet transmission method may include the following steps. A path engine circuit of the apparatus may receive a packet from a modem circuit of the apparatus or from a Wi-Fi chip of the apparatus. Then, the path engine circuit may transmit the packet from the modem circuit to the Wi-Fi chip, or transmit the packet from the Wi-Fi chip to the modem circuit or a central processing unit (CPU) of the apparatus.

Abstract: A method for multi-link operation (MLO) is provided. The method for MLO may be applied to an apparatus. The method for MLO may include the following steps. A multi-chip controller of the apparatus may assign different data to a plurality of chips of the apparatus, wherein each chip corresponds to one link of multi-links. Each chip may determine whether transmission of the assigned data has failed. A first chip of the chips may transmit the assigned data to an access point (AP) in response to the first chip determining that the transmission of the assigned data has not failed.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: The present invention relates to a strontium magnesium molybdenum oxide material having perovskite structure and the method for preparing the same. Citric acid is adopted as the chelating agent. By using sol-gel pyrolysis and replacing a portion of strontium in Sr2MgMoO6-? by cerium and a portion of magnesium by copper, a material with a chemical formula of Sr2-xCexMg1-yCuyMoO6-? is produced, where 0?x<2, 0<y<1, and 0<?<6. Thereby, the electrical conductivity of the material is improved. The perovskite-type cerium- and copper-replaced strontium magnesium molybdenum oxide significantly increases the electrical conductivity of the material and can be applied as the anode material for solid oxide fuel cell (SOFC).

Abstract: The present invention relates to a strontium magnesium molybdenum oxide material having perovskite structure and the method for preparing the same. Citric acid is adopted as the chelating agent. By using sol-gel pyrolysis and replacing a portion of strontium in Sr2MgMoO6-? by cerium and a portion of magnesium by copper, a material with a chemical formula of Sr2-xCexMg1-yCuyMoO6-? is produced, where 0?x<2, 0<y<1, and 0<?<6. Thereby, the electrical conductivity of the material is improved. The perovskite-type cerium- and copper-replaced strontium magnesium molybdenum oxide significantly increases the electrical conductivity of the material and can be applied as the anode material for solid oxide fuel cell (SOFC).