Patents by Inventor Hui Ren

Hui Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10935272
    Abstract: Various embodiments include a control valve comprising a first valve assembly between an inlet and an outlet. The first valve assembly comprises: a valve seat fixed relative to the valve body with an opening in a sidewall; a slider rotating inside the valve seat to block the opening, but stationary in an axial direction; a regulating valve plug with an opening at one end, surrounding the valve seat and movable in the axial direction to block the opening in the sidewall of the valve seat; and a first valve stem connected to the slider and to the regulating valve plug, the first valve stem having one end extending out of the valve body. A first overlap between the slider and the opening and a second overlap of the plug and the opening are changed by movement of the first valve stem.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: March 2, 2021
    Assignee: SIEMENS SCHWEIZ AG
    Inventors: Lei Wang, Zuo Hui Ren, Jian Hui Wang, Fu Lai Zhong, Fang Zhao, Ping Zhang, Xiao Xiang Zhang, Ning Zhan
  • Patent number: 10903249
    Abstract: An array substrate including a plurality of terminals, a first conductive layer and a second conductive layer, wherein the first conductive layer and the second conductive layer include an insulating layer therebetween, wherein a plurality of first electrode plates and a plurality of second electrode plates are formed in the first conductive layer and the second conductive layer, respectively, the first electrode plates and the second electrode plates are opposite to each other to constitute a capacitor structure, the terminals are provided in the same layer as the first conductive layer or the second conductive layer, or the terminals are provided in the same layer as a third conductive layer between the first conductive layer and the second conductive layer. A method of manufacturing an array substrate and a display device is provided.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: January 26, 2021
    Assignees: ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Zhang, Hui Li, Tianlei Shi, Jonguk Kwak, Yezhou Fang, Wenlong Zhang, Xu Zhang, Zhijun Niu, Ruize Jiang, Yanwei Ren, Yu Liu
  • Patent number: 10879458
    Abstract: A memory device includes a bottom electrode, a resistance switching element, a capping layer, a top electrode, a first spacer, and a second spacer. The resistance switching element is over the bottom electrode. The capping layer is over the resistance switching element. The top electrode is over the capping layer. The first spacer extends along a sidewall of the resistance switching element. The second spacer extends along a sidewall of the first spacer and beyond a top of the first spacer, in which the second spacer is in contact with the capping layer.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen Peng, Hui-Hsien Wei, Wei-Chih Wen, Pin-Ren Dai, Chien-Min Lee, Sheng-Chih Lai, Han-Ting Tsai, Chung-Te Lin
  • Publication number: 20200365802
    Abstract: A semiconductor device includes an inter-layer dielectric (ILD) layer, a first metallization pattern, an etch stop layer, a metal-containing compound layer, a memory cell, and a second metallization pattern. The first metallization pattern is in the ILD layer. The etch stop layer is over the ILD layer. The metal-containing compound layer is over the etch stop layer, in which the etch stop layer has a portion extending beyond an edge of the metal-containing compound layer. The memory cell is over the metal-containing compound layer and including a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element. The second metallization pattern extends through the portion of the etch stop layer to the first metallization pattern.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 19, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen PENG, Hui-Hsien WEI, Wei-Chih WEN, Pin-Ren DAI, Chien-Min LEE, Han-Ting TSAI, Jyu-Horng SHIEH, Chung-Te LIN
  • Publication number: 20200348534
    Abstract: Provided are a desktop 3D display system and a display method thereof. The desktop 3D display system comprises a 2D image display module (1), a viewing angle directing module (2), a light modulating module (3) and a rotating module (5), wherein the 2D image display module is used for receiving and displaying an integral imaging source; the viewing angle guide module is arranged on the 2D image display module, and is used for guiding light emitted from the integral imaging source of the 2D image display module; the light modulation module is arranged above the viewing angle guide module for modulating the light guided by the viewing angle guide module and reconstructing a 3D image; and the rotation module is configured to enable synchronous rotation of the 2D image display module, the view angle guide module and the light modulation module, wherein, the rotation angle speed of the synchronous rotation is associated with the switching speed of the integral imaging source of the 2D image display module.
    Type: Application
    Filed: February 15, 2019
    Publication date: November 5, 2020
    Applicants: BEIHANG UNIVERSITY, SICHUAN UNIVERSITY
    Inventors: Qionghua WANG, Ling LUO, Huan DENG, Hui REN, Min ZHAO, Sai LI
  • Patent number: 10809169
    Abstract: A system for in-situ testing of mechanical properties of materials in static and dynamic load spectra, that includes: an Arcan biaxial clamping subsystem, a press-in test subsystem, a biaxial fatigue test subsystem, a biaxial pre-tension loading subsystem, a signal detection subsystem, and a support and adjustment subsystem. A combined guide mechanism in the Arcan biaxial clamping subsystem is rigidly connected to a guide mechanism support block, an x-direction three sensor base and a y-direction force sensor base in the support and adjustment subsystem by threaded connections, respectively. A laser transmitter, a voice coil motor and a laser receiver in the press-in test subsystem are rigidly connected to a two-degree-of-freedom electric moving platform for the laser transmitter, a two-degree-of-freedom electric moving platform for the voice coil motor and a two-degree-of-freedom electric moving platform for the laser receiver in the support and adjustment subsystem by threaded connections, respectively.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: October 20, 2020
    Assignee: JILIN UNIVERSITY
    Inventors: Zhichao Ma, Hongwei Zhao, Luquan Ren, Shizhong Zhang, Jingshi Dong, Zunqiang Fan, Daining Fang, Jingchun Ma, Yongmao Pei, Qixun Zhang, Hui Fan, Qingwei Zhuang
  • Patent number: 10803267
    Abstract: An illuminator is provided, comprising a support frame arranged symmetrically around an optical axis of an optical sensor. The illuminator includes at least one light bar connected to the support frame. At least one light source is connected to the support frame, wherein each of the at least one light source is configured to direct light towards one of the opposing ends of one of the at least one light bar. The illuminator further includes a peripheral cover configured to receive light emitted from the front face of each of the at least one light bar. The peripheral cover is further configured to emit dark field illumination at a low incident angle with respect to a plane perpendicular to the optical axis and to emit bright field illumination at a high incident angle with respect to the plane perpendicular to the optical axis.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: October 13, 2020
    Assignee: HAND HELD PRODUCTS, INC.
    Inventors: Jie Ren, Lin Wang, Yuefeng Mo, Chen Feng, Yunxin Ouyang, Hui Li, Jun Yin
  • Publication number: 20200308027
    Abstract: A method of measuring concentration of dissolved organic nitrogen in sewage. The method includes: filtering a sewage sample using a filter membrane; measuring the concentrations of total dissolved nitrogen (TDN), ammonia nitrogen (NH4+), and nitric nitrogen (NO3?) in the sewage sample, respectively designated as CTDN(I), CNH4+(I) and CNO3?(I); calculating the ratios of (CNH4+(I)+CNO3?(I))/CTDN(I) and CNO3?(I)/CNH4+(I), and according to the ratios, calculating the concentration of dissolved organic nitrogen (DON) in the sewage sample.
    Type: Application
    Filed: June 15, 2020
    Publication date: October 1, 2020
    Inventors: Hongqiang REN, Haidong HU, Jinju GENG, Lili DING, Hui HUANG
  • Publication number: 20200266339
    Abstract: A memory device includes a bottom electrode, a resistance switching element, a capping layer, a top electrode, a first spacer, and a second spacer. The resistance switching element is over the bottom electrode. The capping layer is over the resistance switching element. The top electrode is over the capping layer. The first spacer extends along a sidewall of the resistance switching element. The second spacer extends along a sidewall of the first spacer and beyond a top of the first spacer, in which the second spacer is in contact with the capping layer.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen PENG, Hui-Hsien WEI, Wei-Chih WEN, Pin-Ren DAI, Chien-Min LEE, Sheng-Chih LAI, Han-Ting TSAI, Chung-Te LIN
  • Publication number: 20200266338
    Abstract: A method for fabricating a memory device is provided. The method includes depositing a resistance switching element layer over a bottom electrode layer; depositing a top electrode layer over the resistance switching element layer; etching the top electrode layer, the resistance switching element layer, and the bottom electrode layer to form a memory stack; depositing a first spacer layer over the memory stack and; etching the first spacer layer to form a first spacer extending along a sidewall of the memory stack; depositing a second spacer layer over the memory stack and the first spacer; etching the second spacer layer to form a second spacer extending along a sidewall of the first spacer; and depositing an etch stop layer over and in contact with a top of the second spacer, wherein the etch stop layer is spaced apart from the first spacer by a portion of the second spacer.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen PENG, Hui-Hsien WEI, Wei-Chih WEN, Pin-Ren DAI, Chien-Min LEE, Sheng-Chih LAI, Han-Ting TSAI, Chung-Te LIN
  • Publication number: 20200257665
    Abstract: A search engine identifies external data records that describe similar entities and may each conform to a different data format or source schema. The engine derives mappings capable of translating data values between differently formatted attributes of two source schemas and uses these mappings to identify degrees of similarity between attributes and schemas. When the search engine receives a search request, the engine translates submitted search criteria into values of a first schema's attributes and then uses the mappings to map those values onto selected attributes of other schemas. The search engine then uses each schema's selected attributes to select external data records formatted in that schema. Each selected record is assigned a match score that is weighted by the similarity of the record schema's selected attributes to the search criteria. Records are then retrieved in order of decreasing match score.
    Type: Application
    Filed: May 1, 2020
    Publication date: August 13, 2020
    Inventors: Wei Yan, Jie Wang, Jian Hui Chen, Yu Zhu Xu, Xiao Bo Ren, Jian Lu
  • Patent number: 10734580
    Abstract: A memory device includes an inter-layer dielectric (ILD) layer, a metallization pattern, an etch stop layer, a metal-containing compound layer, a memory cell, and a bottom electrode via. The metallization pattern is in the ILD layer. The etch stop layer is over the ILD layer. The metal-containing compound layer is over the etch stop layer. The memory cell is over the metal-containing compound layer and includes a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element. The bottom electrode via connects the bottom electrode to the metallization pattern through the metal-containing compound layer and the etch stop layer.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: August 4, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen Peng, Hui-Hsien Wei, Wei-Chih Wen, Pin-Ren Dai, Chien-Min Lee, Han-Ting Tsai, Jyu-Horng Shieh, Chung-Te Lin
  • Publication number: 20200231479
    Abstract: A method for achieving rapid startup of a denitrification biofilter tank, which belongs to the technical field of biofilm sewage treatment. The specific steps are: 1. selecting heterotrophic denitrification or mixotrophic denitrification to treat influent sewage; 2. when the heterotrophic denitrification is used, pretreating the filter material with sodium carboxymethyl cellulose solution and then adding rhamnolipid after the introduction of sewage until the biofilter tank system starts successfully; 3. when the mixotrophic denitrification method is used, the filter tank is inoculated after the introduction of sewage, and the rhamnolipid is added thereto and is changed to sulfur source after operation for a while until startup is complete. The invention solves the problem that the denitrification biofilter tank in the sewage treatment is particularly slow in the mixotrophic state, and has a good application prospect.
    Type: Application
    Filed: March 14, 2019
    Publication date: July 23, 2020
    Inventors: Hui HUANG, Chong PENG, XuXiang ZHANG, HongQiang REN
  • Publication number: 20200227446
    Abstract: An array substrate including a plurality of terminals, a first conductive layer and a second conductive layer, wherein the first conductive layer and the second conductive layer include an insulating layer therebetween, wherein a plurality of first electrode plates and a plurality of second electrode plates are formed in the first conductive layer and the second conductive layer, respectively, the first electrode plates and the second electrode plates are opposite to each other to constitute a capacitor structure, the terminals are provided in the same layer as the first conductive layer or the second conductive layer, or the terminals are provided in the same layer as a third conductive layer between the first conductive layer and the second conductive layer. A method of manufacturing an array substrate and a display device is provided.
    Type: Application
    Filed: March 29, 2018
    Publication date: July 16, 2020
    Inventors: Wei ZHANG, Hui LI, Tianlei SHI, Jonguk KWAK, Yezhou FANG, Wenlong ZHANG, Xu ZHANG, Zhijun NIU, Ruize JIANG, Yanwei REN, Yu LIU
  • Patent number: 10712315
    Abstract: A device for supervising biofilm culturing, the device including: a fixed seat including an upper end; a supervision chamber; two ultrasonic sensing probes; a first mounting chamber; a second mounting chamber disposed between the fixed seat and the supervision chamber; an ultrasonic generator; an oscilloscope; and a controller. The first and second mounting chambers are disposed at two opposite ends of the supervision chamber, respectively. The two ultrasonic sensing probes are disposed in the first and second mounting chambers, respectively. The second mounting chamber is connected to the upper end of the fixed seat. The two ultrasonic sensing probes each are respectively connected to the ultrasonic generator, the oscilloscope, and the controller successively.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: July 14, 2020
    Assignee: NANJING UNIVERSITY
    Inventors: Hongqiang Ren, Jinfeng Wang, Lili Ding, Jianxin Li, Huimin Fu, Hui Huang
  • Patent number: D888897
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: June 30, 2020
    Assignee: KOHLER CO.
    Inventors: Jean-Hugues Soulier, Ferran Serra Sola, Chia Lee, Jimin Niu, Sophie Su, Hui Ren
  • Patent number: D888898
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: June 30, 2020
    Assignee: KOHLER CO.
    Inventors: Jean-Hugues Soulier, Ferran Serra Sola, Chia Lee, Jimin Niu, Sophie Su, Hui Ren
  • Patent number: D900976
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: November 3, 2020
    Assignee: KOHLER CO.
    Inventors: Jean-Hugues Soulier, Ferran Serra Sola, Chia Lee, Jimin Niu, Sophie Su, Hui Ren
  • Patent number: D900977
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: November 3, 2020
    Assignee: KOHLER CO.
    Inventors: Jean-Hugues Soulier, Ferran Serra Sola, Chia Lee, Jimin Niu, Sophie Su, Hui Ren
  • Patent number: D904570
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 8, 2020
    Assignee: KOHLER CO.
    Inventors: Jean-Hugues Soulier, Ferran Serra Sola, Chia Lee, Jimin Niu, Sophie Su, Hui Ren