Abstract: A disclosed method of fabricating a semiconductor structure includes forming a first conductive pattern over a substrate, with the first conductive pattern including a first conductive line and a second conductive line. A barrier layer may be conformally formed over the first conductive line and the second conductive line of the first conductive pattern. An insulating layer may be formed over the barrier layer. The insulating layer may be patterned to form openings between conductive lines of the first conductive pattern a second conductive pattern may be formed in the openings. The second conductive pattern may include a third conductive line is physically separated from the first conductive pattern by the barrier layer. The presence of the barrier layer reduces the risk of a short circuit forming between the first and second conductive patterns. In this sense, the second conductive pattern may be self-aligned relative to the first conductive pattern.

Abstract: A disclosed semiconductor device includes a substrate, a gate electrode formed on the substrate, a gate dielectric layer formed over the gate electrode, a source electrode located adjacent to a first side of the gate electrode, and a drain electrode located adjacent to a second side of the gate electrode. A gate dielectric formed from an etch-stop layer and/or high-k dielectric layer separates the source electrode from the gate electrode and substrate and separates the drain electrode from the gate electrode and the substrate. First and second oxide layers are formed over the gate dielectric and are located adjacent to the source electrode on the first side of the gate electrode and located adjacent to the drain electrode on the second side of the gate electrode. A semiconductor layer is formed over the first oxide layer, the second oxide layer, the source electrode, the drain electrode, and the gate dielectric.

Abstract: A semiconductor device includes a first dielectric layer, a gate electrode embedded within the first dielectric layer, a layer stack including a gate dielectric layer, a channel layer including a semiconducting metal oxide material, and a second dielectric layer, and a source electrode and a drain electrode embedded in the second dielectric layer and contacting a respective portion of a top surface of the channel layer. A combination of the gate electrode, the gate dielectric layer, the channel layer, the source electrode, and the drain electrode forms a transistor. The total length of the periphery of a bottom surface of the channel layer that overlies the gate electrode is equal to the width of the gate electrode or twice the width of the gate electrode, and resputtering of the gate electrode material on sidewalls of the channel layer is minimized.

Abstract: A semiconductor device includes a first dielectric layer, a gate electrode embedded within the first dielectric layer, a layer stack including a gate dielectric layer, a channel layer including a semiconducting metal oxide material, and a second dielectric layer, and a source electrode and a drain electrode embedded in the second dielectric layer and contacting a respective portion of a top surface of the channel layer. A combination of the gate electrode, the gate dielectric layer, the channel layer, the source electrode, and the drain electrode forms a transistor. The total length of the periphery of a bottom surface of the channel layer that overlies the gate electrode is equal to the width of the gate electrode or twice the width of the gate electrode, and resputtering of the gate electrode material on sidewalls of the channel layer is minimized.

Abstract: A semiconductor device includes a semiconducting metal oxide fin located over a lower-level dielectric material layer, a gate dielectric layer located on a top surface and sidewalls of the semiconducting metal oxide fin, a gate electrode located on the gate dielectric layer and straddling the semiconducting metal oxide fin, an access-level dielectric material layer embedding the gate electrode and the semiconducting metal oxide fin, a memory cell embedded in a memory-level dielectric material layer and including a first electrode, a memory element, and a second electrode, and a bit line overlying the memory cell. The first electrode may be electrically connected to a drain region within the semiconducting metal oxide fin through a first electrically conductive path, and the second electrode is electrically connected to the bit line.

Abstract: A disclosed semiconductor device includes a substrate, a gate electrode formed on the substrate, a gate dielectric layer formed over the gate electrode, a source electrode located adjacent to a first side of the gate electrode, and a drain electrode located adjacent to a second side of the gate electrode. A gate dielectric formed from an etch-stop layer and/or high-k dielectric layer separates the source electrode from the gate electrode and substrate and separates the drain electrode from the gate electrode and the substrate. First and second oxide layers are formed over the gate dielectric and are located adjacent to the source electrode on the first side of the gate electrode and located adjacent to the drain electrode on the second side of the gate electrode. A semiconductor layer is formed over the first oxide layer, the second oxide layer, the source electrode, the drain electrode, and the gate dielectric.

Abstract: A semiconductor device includes a semiconducting metal oxide fin located over a lower-level dielectric material layer, a gate dielectric layer located on a top surface and sidewalls of the semiconducting metal oxide fin, a gate electrode located on the gate dielectric layer and straddling the semiconducting metal oxide fin, an access-level dielectric material layer embedding the gate electrode and the semiconducting metal oxide fin, a memory cell embedded in a memory-level dielectric material layer and including a first electrode, a memory element, and a second electrode, and a bit line overlying the memory cell. The first electrode may be electrically connected to a drain region within the semiconducting metal oxide fin through a first electrically conductive path, and the second electrode is electrically connected to the bit line.

Abstract: A support board structure includes a base plate, a folding plate, and an elastic binding belt. The base plate has a top edge, a bottom edge, and a backside therebetween. The folding plate includes an abutting portion pivotally connected to the bottom edge, a connecting portion and a supporting portion pivotally connected between the abutting portion and the connecting portion. The supporting portion is formed with a strip-shaped hole. An end of the elastic binding belt is fixed to the base plate, and another end thereof is fixed to the base plate and passing the connecting portion. The folding plate flatly abuts against the backside when collapsed, and the connecting portion is reversely folded to flatly abut against the backside to form a three-dimensional structure and define an elevation angle between the abutting portion and the base plate when expanded.

Abstract: A support board structure includes a base plate, a folding plate, and an elastic binding belt. The base plate has a top edge, a bottom edge, and a backside therebetween. The folding plate includes an abutting portion pivotally connected to the bottom edge, a connecting portion and a supporting portion pivotally connected between the abutting portion and the connecting portion. The supporting portion is formed with a strip-shaped hole. An end of the elastic binding belt is fixed to the base plate, and another end thereof is fixed to the base plate and passing the connecting portion. The folding plate flatly abuts against the backside when collapsed, and the connecting portion is reversely folded to flatly abut against the backside to form a three-dimensional structure and define an elevation angle between the abutting portion and the base plate when expanded.

Abstract: A lithium battery charge-limiting apparatus includes a microcontroller, a current detector, and an electronic switch. The current detector detects a consumption current of an electronic apparatus having a lithium battery and informs the microcontroller of the consumption current, so that the microcontroller learns a plurality of the consumption currents. The microcontroller determines a first amount of a plurality of slopes of the consumption currents. If a second amount in the first amount of the slopes of the consumption currents are between a first minus number and zero, and if a next slope of the slopes of the second amount of the consumption currents is greater than a present slope of the slopes of the second amount of the consumption currents, the microcontroller turns off the electronic switch to stop transmitting a charging voltage to the electronic apparatus.

Abstract: A flexible heating apparatus can heat a heated body. The flexible heating apparatus includes a flexible carrier, a heating unit and a control module. The heating unit is at least one layer arranged inside the flexible carrier. The control module is arranged inside the flexible carrier and is electrically connected to the heating unit. Moreover, the control module is connected to an external electric apparatus, and is controlled by the external electric apparatus to control the heating unit to proceed a heating control to the heated body.

Abstract: A mobile power source sharing device and a mobile power source thereof are disclosed. The mobile power source sharing device includes a power supply main body having insertion slots and wireless charging modules disposed at one side of each insertion slot, and a mobile power source having a housing, a battery, a wireless receiving terminal module and a wireless transmitting terminal module. Each wireless charging module has a wireless charging coil and a control circuit board electrically connected. The mobile power source can be inserted in or removed from one of the insertion slots. When the mobile power source is inserted in one of the insertion slots, the wireless charging coil and the wireless receiving terminal module are oppositely arranged. Accordingly, the mobile power source is still provided with a charging function while running out electric energy and unable to be returned.

Abstract: A universal serial bus power-supplying apparatus with delay functions includes a power convertor, a power delivery communication controller and a plurality of switch units. The power delivery communication controller calculates a first communication time between the universal serial bus power-supplying apparatus and a first electronic apparatus. The power delivery communication controller calculates a second communication time between the universal serial bus power-supplying apparatus and a second electronic apparatus. The universal serial bus power-supplying apparatus utilizes a time difference between the first communication time and the second communication time to simultaneously supply power to the first electronic apparatus and the second electronic apparatus to drive the first electronic apparatus and the second electronic apparatus.

Abstract: A flexible heating apparatus can heat a heated body. The flexible heating apparatus includes a flexible carrier, a heating unit and a control module. The heating unit is at least one layer arranged inside the flexible carrier. The control module is arranged inside the flexible carrier and is electrically connected to the heating unit. Moreover, the control module is connected to an external electric apparatus, and is controlled by the external electric apparatus to control the heating unit to proceed a heating control to the heated body.

Abstract: A universal serial bus power-supplying apparatus with power-switching functions includes a power convertor, a power delivery communication controller and a plurality of switch units. The power delivery communication controller calculates a first communication time between the universal serial bus power-supplying apparatus and a first electronic apparatus. The power delivery communication controller calculates a second communication time between the universal serial bus power-supplying apparatus and a second electronic apparatus. The universal serial bus power-supplying apparatus utilizes a time difference between the first communication time and the second communication time to switch the switch units to supply power to the first electronic apparatus and the second electronic apparatus.

Abstract: A charger with detachable replacing adaptor includes a charger main body, an adaptor and a buckle releasing assembly; the charger main body has a housing in which a guiding structure and a buckle part are disposed, and the guiding structure has electric conducive terminals; the adaptor has an insulation base and electric conducive units, the insulation base is combined corresponding to the guiding structure, the electric conductive units are electrically connected to the electric conductive terminals, and the insulation base has an elastic latch hook; the buckle releasing assembly is disposed on the insulation base and has a moveable unit, the moveable unit has a push rod used for driving the elastic latch hook to be released corresponding to the buckle part. Accordingly, the adaptor can be rapidly detached from the charger main body.

Abstract: A charging connector of a mobile power pack, used for being connected to and charging an electronic product, includes an insulating body, a first connector and a second connector both protruding from and exposed outside the insulating body. The first connector is plugged into a charging slot of the electronic product. The second connector is electrically connected to the first connector and is plugged into a power slot of the mobile power pack. The insulating body extends from one side of the first connector and is connected to the second connector. The first connector and the second connector are respectively plugged into the electronic product and the mobile power pack, via the insulating body. Thereby, the convenience of utilizing the power mobile pack to charge the electronic product is improved.

Abstract: A mobile power supply apparatus includes a base and a main body. The base has a first socket and a second socket disposed adjacent to the first socket, and both sockets, are exposed from a side of the base. The main body is extended from the base, and the main body, the first socket and the second socket are disposed on the same side of the base, and the main body has a slot, and the first socket and the second socket are accommodated at the bottom of the slot to constitute a storage structure.

Abstract: A mobile power supply includes a case, a control circuit board, a power storage module, a heating element and a thermal sheet. The case is with a hole formed thereon. The control circuit board is disposed in the case. A plurality of electrical connectors is welded on the control circuit board and is exposed by the case. The power storage module is disposed in the case and electrically connected to the control circuit board. The heating element is disposed on the case and exposed at the hole. The heating element is electrically connected to the control circuit board. The thermal sheet is attached to the case and in contact with the heating element. Thereby, the mobile power supply may provide heat and be used for heat preservation or for keeping warm.