Patents by Inventor Hui-Ting Chen
Hui-Ting Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12170327Abstract: A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.Type: GrantFiled: August 10, 2021Date of Patent: December 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ming-Te Chen, Hui-Ting Tsai, Jun He, Kuo-Feng Yu, Chun Hsiung Tsai
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Patent number: 12148723Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.Type: GrantFiled: December 7, 2022Date of Patent: November 19, 2024Assignee: United Microelectronics Corp.Inventors: Zhirui Sheng, Hui-Ling Chen, Chung-Hsing Kuo, Chun-Ting Yeh, Ming-Tse Lin, Chien En Hsu
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Publication number: 20240379825Abstract: A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.Type: ApplicationFiled: July 25, 2024Publication date: November 14, 2024Inventors: MING-TE CHEN, HUI-TING TSAI, JUN HE, KUO-FENG YU, CHUN HSIUNG TSAI
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Publication number: 20240379796Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.Type: ApplicationFiled: July 23, 2024Publication date: November 14, 2024Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Kuan-Ting Liu, Yen-Ju Chen, Chun-Chih Cheng, Wei-Chen Hsiao
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Publication number: 20240371648Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.Type: ApplicationFiled: July 15, 2024Publication date: November 7, 2024Inventors: Chun-Hao KUNG, Hui-Chi HUANG, Kei-Wei CHEN, Yen-Ting Chen
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Patent number: 12111268Abstract: A surface inspection system for foil article is disclosed. The surface inspection system comprises a box having a top long narrow opening and a bottom long narrow opening, a bridge interface, a first light source, a second light source, a first modular camera device having a first camera, and a second modular camera device having a second camera. In which, the first light source, the second light source, the first modular camera device, and the second modular camera device all accommodated in the box, and are coupled to a control box through the bridge interface. Particularly, this surface inspection system is allowed to be integrated in an automatic production line of a foil article like electro-forming aluminum foil (also called electronic aluminum foil), so as to achieve an in-line inspection of the surface morphology of the electro-forming aluminum foil.Type: GrantFiled: November 17, 2022Date of Patent: October 8, 2024Assignees: Kapito Inc.Inventors: Feng-Tso Sun, Yi-Ting Yeh, Feng-Yu Sun, Shiang-En Hong, Po-Han Chou, Hui-Pu Chang, Yun-Yi Chen, Jyun-Tang Huang
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Publication number: 20240322042Abstract: A semiconductor device includes a substrate, a dielectric region, a first fin structure, a second fin structure, a plurality of conductive regions, a first conductive rail and a conductive structure. The dielectric region is situated on the substrate. The first fin structure protrudes from the substrate and the dielectric region. The second fin structure protrudes from the substrate and the dielectric region, and extends parallel to the first fin structure. The conductive regions are situated on the dielectric region. The first conductive rail is situated within the dielectric region, and electrically connected to a first conductive region of the plurality of conductive regions. Opposite sides of the first conductive rail face the first fin structure and the second fin structure, respectively. The conductive structure penetrates through the substrate and formed under the first conductive rail, and is electrically connected to the first conductive rail.Type: ApplicationFiled: May 23, 2024Publication date: September 26, 2024Inventors: CHIH-LIANG CHEN, LEI-CHUN CHOU, JACK LIU, KAM-TOU SIO, HUI-TING YANG, WEI-CHENG LIN, CHUN-HUNG LIOU, JIANN-TYNG TZENG, CHEW-YUEN YOUNG
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Patent number: 12094948Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.Type: GrantFiled: September 3, 2021Date of Patent: September 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Kuan-Ting Liu, Yen-Ju Chen, Chun-Chih Cheng, Wei-Chen Hsiao
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Patent number: 12087590Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.Type: GrantFiled: December 15, 2022Date of Patent: September 10, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hao Kung, Hui-Chi Huang, Kei-Wei Chen, Yen-Ting Chen
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Publication number: 20240297143Abstract: A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.Type: ApplicationFiled: May 3, 2024Publication date: September 5, 2024Inventors: CHIH-YUAN CHIU, SHIH-YEN CHEN, CHI-CHUN PENG, HONG-KUN CHEN, HUI-TING LIN
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Publication number: 20240247032Abstract: A method for preparing amphiphiles with dendrimeric skeletons by a solid phase linker approach.Type: ApplicationFiled: August 23, 2021Publication date: July 25, 2024Applicant: KAOHSIUNG MEDICAL UNIVERSITYInventors: Chai-Lin Kao, Hui-Ting Chen, Vijayasimha Molakaseema, Anand Selvaraj
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Patent number: 11344548Abstract: A method for treating low bone mineral density associated with osteopenia, osteoporosis, and other diseases is disclosed. The method comprises administrating a composition comprising a 3,5-dihydroxypentanoic acid derivative according to Formula I to a mammal. A compound of 3,5-dihydroxypentanoic acid derivative having a structure according to Formula I or Formula II is also disclosed.Type: GrantFiled: October 8, 2015Date of Patent: May 31, 2022Assignee: KAOHSIUNG MEDICAL UNIVERSITYInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Chai-Lin Kao, Je-Ken Chang, Mei-Ling Ho
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Publication number: 20210322411Abstract: A method for treating low bone mineral density associated with osteopenia, osteoporosis, and other diseases is disclosed. The method comprises administrating a composition comprising a 3,5-dihydroxypentanoic acid derivative according to Formula I to a mammal. A compound of 3,5-dihydroxypentanoic acid derivative having a structure according to Formula I or Formula II is also disclosed.Type: ApplicationFiled: October 8, 2015Publication date: October 21, 2021Applicant: KAOHSIUNG MEDICAL UNIVERSITYInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Chai-Lin Kao, Je-Ken Chang, Mei-Ling Ho
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Publication number: 20210015967Abstract: A method for preparing hyaluronic acid hydrogel microparticles and a use thereof in repairing articular cartilage defects, the method for preparing hyaluronic acid hydrogel microparticles includes: (a) reacting hyaluronic acid with methacrylic anhydride to synthesize a methacrylated hyaluronic acid conjugate; (b) mixing the methacrylated hyaluronic acid conjugate with a photoinitiator, and irradiating ultraviolet light to carry out a photopolymerization reaction so as to obtain a hyaluronic acid hydrogel; and (c) passing the hyaluronic acid hydrogel through a sieve to obtain hyaluronic acid hydrogel microparticles.Type: ApplicationFiled: March 23, 2018Publication date: January 21, 2021Applicant: KAOHSIUNG MEDICAL UNIVERSITYInventors: Mei-Ling HO, Je-Ken CHANG, Chung-Hwan CHEN, Hui-Ting CHEN, Shun Cheng WU, Benjamin TEONG
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Patent number: 9415114Abstract: A series of peptides with divergent confirmations including structures of formula (1A), (1B), (2) and (3) are provided. In the formula, wherein U, G, A, B, R1, R2 and T are as defined in the specification. The divergent peptides disclosed in the present invention are characterized in a mineral binding affinity function.Type: GrantFiled: July 22, 2015Date of Patent: August 16, 2016Assignee: Kaohsiung Medical UniversityInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Je-Ken Chang, Gwo-Jaw Wang, Yin-Chih Fu, Mei-Ling Ho, Cherng-Chyi Tzeng
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Patent number: 9314533Abstract: A series of peptides with divergent confirmations including structures of formula (1A), (1B), (2) and (3) are provided. In the formula, wherein U, G, A, B, R1, R2 and T are as defined in the specification. The divergent peptides disclosed in the present invention are characterized in a mineral binding affinity function.Type: GrantFiled: June 27, 2014Date of Patent: April 19, 2016Assignee: KAOHSIUNG MEDICAL UNIVERSITYInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Je-Ken Chang, Gwo-Jaw Wang, Yin-Chih Fu, Mei-Ling Ho, Cherng-Chyi Tzeng
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Publication number: 20150320876Abstract: A series of peptides with divergent confirmations including structures of formula (1A), (1B), (2) and (3) are provided. In the formula, wherein U, G, A, B, R1, R2 and T are as defined in the specification. The divergent peptides disclosed in the present invention are characterized in a mineral binding affinity function.Type: ApplicationFiled: July 22, 2015Publication date: November 12, 2015Applicant: KAOHSIUNG MEDICAL UNIVERSITYInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Je-Ken Chang, Gwo-Jaw Wang, Yin-Chih Fu, Mei-Ling Ho, Cherng-Chyi Tzeng
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Publication number: 20140377212Abstract: A series of peptides with divergent confirmations including structures of formula (1A), (1B), (2) and (3) are provided. In the formula, wherein U, G, A, B, R1, R2 and T are as defined in the specification. The divergent peptides disclosed in the present invention are characterized in a mineral binding affinity function.Type: ApplicationFiled: June 27, 2014Publication date: December 25, 2014Applicant: Kaohsiung Medical UniversityInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Je-Ken Chang, Gwo-Jaw Wang, Yin-Chih Fu, Mei-Ling Ho, Cherng-Chyi Tzeng
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Patent number: 8889828Abstract: A series of peptides with divergent confirmations including structures of formula (1A), (1B), (2) and (3) are provided. In the formula, wherein U, G, A, B, R1, R2 and T are as defined in the specification. The divergent peptides disclosed in the present invention are characterized in a mineral binding affinity function.Type: GrantFiled: October 21, 2011Date of Patent: November 18, 2014Assignee: Kaohsiung Medical UniversityInventors: Hui-Ting Chen, Kuang-Chan Hsieh, Je-Ken Chang, Gwo-Jaw Wang, Yin-Chih Fu, Mei-Ling Ho, Cherng-Chyi Tzeng
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Patent number: 8883862Abstract: A method for locally controlled release of an effective amount of PTH(1-34) by a hyaluronic acid based hydrogel that can injected intra-articularly for the treatment of osteoarthritis is provided.Type: GrantFiled: January 12, 2012Date of Patent: November 11, 2014Assignee: Kaohsiung Medical UniversityInventors: Mei-Ling Ho, Rajalakshmanan Eswaramoorthy, Shun-Cheng Wu, Gwo-Jaw Wang, Je-Ken Chang, Yin-Chih Fu, Cherng-Chyi Tzeng, Hui-Ting Chen, Yao-Hsien Wang