Patents by Inventor Hui Wen Chen
Hui Wen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250090459Abstract: Disclosed herein is an internally fixed lipid vesicle generated from a cell that substantially preserves the membrane characteristics of the cell and methods of using the internally fixed lipid vesicle.Type: ApplicationFiled: September 13, 2024Publication date: March 20, 2025Inventors: Che-Ming Jack Hu, Hui-Wen Chen, Yuan-I Chen, Chen-Ying Chien, Jung-Chen Lin
-
Patent number: 12243901Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: GrantFiled: March 15, 2023Date of Patent: March 4, 2025Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
-
Publication number: 20240335493Abstract: The present invention is a mung bean hull extract with antiviral effect, and the mung bean hull extract achieves antiviral effect by inhibiting ?-glucosidase and neuraminidase. The present invention also relates to a method for extracting the mung bean hull extract with antiviral effect and applications of the extract obtained by the method.Type: ApplicationFiled: June 18, 2024Publication date: October 10, 2024Inventors: Hui-Wen CHEN, Feng-Ling YU, Ying-Nien HUNG, Chia-Chen PI
-
Patent number: 12109309Abstract: A method of generating an internally fixed lipid vesicle, comprising: providing a precursor lipid vesicle that contains an aqueous interior enclosed by a lipid membrane, wherein the lipid membrane of the precursor lipid vesicle is non-permeable to a crosslinker; permeabilizing the lipid membrane transiently to generate a permeable vesicle; contacting the permeable vesicle with an inactive activatable crosslinker, whereby the inactive activatable crosslinker enters the permeable vesicle; allowing the permeable vesicle to return to a non-permeable vesicle; removing any extravesicular crosslinker; and activating the inactive activatable crosslinker to allow crosslinking to occur inside the non-permeable vesicle, whereby an internally fixed lipid vesicle is generated.Type: GrantFiled: July 28, 2017Date of Patent: October 8, 2024Assignee: Academia SinicaInventors: Che-Ming Jack Hu, Hui-Wen Chen, Yuan-I Chen, Chen-Ying Chien, Jung-Chen Lin
-
Publication number: 20240180845Abstract: A polymeric nanoparticle that has a size of 30-600 nm in outer diameter and contains a polymeric shell, less than 25 nm in thickness and impermeable to water, one or more aqueous cores enclosed by the polymeric shell, and a bioactive agent encapsulated in each of the one or more aqueous cores. Also disclosed are a method of preparing the polymeric nanoparticle and a method of using it for treating a disease.Type: ApplicationFiled: December 8, 2023Publication date: June 6, 2024Inventors: Che-Ming Jack Hu, Hui-Wen Chen, Bing-Yu Yao
-
Patent number: 11966077Abstract: A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.Type: GrantFiled: July 8, 2019Date of Patent: April 23, 2024Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Chien-Lung Chen, Chieh-Ting Lin, Yu-Yi Hsu, Hui-Wen Chen, Bo-Jiun Chen, Shih-Tai Chuang
-
Publication number: 20230395618Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.Type: ApplicationFiled: August 22, 2023Publication date: December 7, 2023Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang
-
Publication number: 20230369376Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.Type: ApplicationFiled: July 19, 2023Publication date: November 16, 2023Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
-
Patent number: 11756969Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.Type: GrantFiled: July 15, 2020Date of Patent: September 12, 2023Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang
-
Publication number: 20230215902Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: ApplicationFiled: March 15, 2023Publication date: July 6, 2023Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
-
Patent number: 11637142Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: GrantFiled: July 25, 2019Date of Patent: April 25, 2023Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
-
Patent number: 11335725Abstract: A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate.Type: GrantFiled: February 26, 2020Date of Patent: May 17, 2022Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen
-
Patent number: 11316065Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: GrantFiled: November 6, 2019Date of Patent: April 26, 2022Assignee: Artilux, Inc.Inventors: Szu-Lin Cheng, Han-Din Liu, Shu-Lu Chen, Yun-Chung Na, Hui-Wen Chen
-
Patent number: 11271132Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: GrantFiled: April 14, 2020Date of Patent: March 8, 2022Assignee: Artilux, Inc.Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin, Yun-Chung Na, Hui-Wen Chen, Han-Din Liu
-
Publication number: 20210271022Abstract: A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.Type: ApplicationFiled: July 8, 2019Publication date: September 2, 2021Inventors: Yun-Chung NA, Chien-Lung CHEN, Chieh-Ting LIN, Yu-Yi HSU, Hui-Wen CHEN, Bo-Jiun CHEN, Shih-Tai CHUANG
-
Publication number: 20210225922Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.Type: ApplicationFiled: March 22, 2021Publication date: July 22, 2021Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
-
Publication number: 20210196777Abstract: The present invention is a mung bean hull extract with antiviral effect, and the mung bean hull extract achieves antiviral effect by inhibiting ?-glucosidase and neuraminidase. The present invention also relates to a method for extracting the mung bean hull extract with antiviral effect and applications of the extract obtained by the method.Type: ApplicationFiled: May 31, 2018Publication date: July 1, 2021Inventors: Hui-Wen CHEN, Feng-Ling YU, Ying-Nien HUNG, Chia-Chen PI
-
Patent number: 10964742Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.Type: GrantFiled: January 24, 2020Date of Patent: March 30, 2021Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
-
Patent number: 10861888Abstract: An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.Type: GrantFiled: April 12, 2018Date of Patent: December 8, 2020Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
-
Publication number: 20200350347Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.Type: ApplicationFiled: July 15, 2020Publication date: November 5, 2020Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang