Abstract: The present invention includes step of selecting a provisional substrate, and forming semiconductor device structure is formed on the provisional substrate. The provisional substrate includes conductor material, semiconductor material or insulator material. Then, next step is to separate the chips on the provisional substrate into a plurality of individual units on the provisional substrate. The separating method includes but is not limited to physical method such as cutting by knife or laser or, chemical method such as lithography. Next step is to select a permanence substrate to attach the device to the permanence substrate by using physical or chemical method. The attaching method includes the usage of glue, metal, fusion, pressure, van der waale force, and so on. Subsequently, the provisional substrate on the other side of the semiconductor device is removed. The method of removing the provisional substrate includes but is not limited to physical polish, chemical etching, or laser removal.