Abstract: Embodiments of the present disclosure provide a gamma standard voltage generating circuit, a gamma driving voltage generating circuit and a display device. The gamma standard voltage generating circuit includes: a constant voltage element for outputting a constant voltage; a following voltage element coupled to a driving voltage terminal, for outputting a following voltage changing with a driving voltage of the driving voltage terminal; a selecting element electrically coupled to the constant voltage element and the following voltage element, for outputting the following voltage 10 or the constant voltage as an output voltage; a comparison element electrically coupled to the selecting element, for controlling the selecting element to output the following voltage when the output voltage meets a preset standard, and controlling the selecting element to output the constant voltage when the output voltage does not meet the preset standard; the constant voltage does not meet the preset standard.

Abstract: The present invention provides a detection reagent and therapeutic target for B cell tumor after targeted therapy and related applications. The reagent composition comprises 3 groups of antibodies, with the first group of antibodies including an anti-CD38 antibody, an anti-CD10 antibody, an anti-CD34 antibody, an anti-CD19 antibody, an anti-CD24 an antibody, an anti-CD20 antibody, an anti-CD81 antibody, an anti-CD45 antibody; the second group of antibodies including an anti-CD38 antibody, an anti-CD10 antibody, an anti-CD34 antibody, an anti-CD19 antibody, an anti-CD20 antibody, an anti-CD72 antibody, an anti-CD45 antibody; and the third group of antibodies including an anti-cytoplasmic CD79a antibody. The reagent composition of the present invention can be applied for the detection of B-lymphocyte tumors after targeted therapy by flow cytometry.

Abstract: The present disclosure provides a vanadium electrolyte, a preparation method and use thereof.

Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: Methods, systems, and devices for wireless communication at a first user equipment (UE) are described. A first UE may transmit control signaling to reserve a first set of time and frequency resources for a sidelink transmission. In some examples, the control signaling may indicate one or more parameters to be used by a second UE to identify a second set of time and frequency resources for performing a full-duplex communication with the first UE. In some examples, the first UE may then communicate with the second UE based on the reserved first set of time and frequency resources and the indicated one or more parameters associated with the second set of time and frequency resources.

Abstract: Methods, systems, and devices for wireless communications are described. A first user equipment (UE) may receive, from a second UE, sidelink control information for performing full-duplex communications with the second UE. The sidelink control information may include an indication of resources reserved by the second UE, an indication of one or more transmit beam directions associated with the resources reserved by the second UE, or both. The first UE may receive, via the resources reserved by the second UE, a first message using a first receive beam based on the sidelink control information. The first UE may transmit, via the resources reserved by the second UE, a second message using a first transmit beam of the first UE, a direction of the first transmit beam being different from a direction of the first receive beam.

Abstract: A flow splitting device for gas reverse circulation drilling, including: an upper joint for connecting with a double-wall drill pipe; an inner tube which is arranged in the upper joint and defines a first passageway in communication with an inner chamber of the double-wall drill pipe, a second passageway in communication with an annular space in the double-wall drill pipe formed between the inner tube and the upper joint; a lower joint, having an upper end fixedly connected with the upper joint and a lower end for connecting with a drill tool; and a flow guiding member provided between the upper joint and the lower joint. A flexible sealing mechanism is provided outside the upper joint. The flexible sealing mechanism extends radially outward relative to the upper joint and the lower joint to form a sealing contact with a wellbore wall.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: Methods, systems, and devices for wireless communications are described. Generally, the described techniques provide for a first user equipment (UE) to establish a communication link with a base station and a sidelink communication link with a second UE using different transmission reception points associated with the first UE. The first UE may perform an interference measurement between downlink communications received on the communication link and sidelink communications transmitted on the sidelink communication link. The first UE may determine whether it is able to perform full-duplex operations on the communication link and the sidelink communication link based on the interference measurement and may transmit an indication of the capability of the first UE to the base station.

Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

Abstract: A touch pad includes a circuit board, plural LED light-emitting elements, a light guide plate and a light-transmissible touch structure. A touch sensing layer is formed on a top surface of the circuit board. The touch sensing layer includes plural touch sensing units. The plural LED light-emitting elements are arranged between the plural touch sensing units. The light guide plate is located over the touch sensing layer and arranged beside the plural LED light-emitting elements. The light-transmissible touch structure includes plural light-transmissible patterns. The light-transmissible touch structure is located over the plural LED light-emitting elements and the light guide plate. A touch control operation is performed on the light-transmissible touch structure by the user. The two terminals of each LED light-emitting element are respectively installed on blank regions of two corresponding sensing circuit regions.

Abstract: A method of processing component carriers is disclosed. The method includes providing a plurality of arrays each comprising a plurality of component carriers, providing a plurality of separator bodies, forming an alternating stack of the arrays and the separator bodies so that each adjacent pair of stacked arrays is spaced by a respective separator body, and carrying out at least one process, in particular at least one back-end process, using the stack. A separator sheet for spacing arrays and a method of using separator sheets for spacing arrays during processing the arrays are also provided.

Abstract: Disclosed are a display substrate. The display substrate includes a drive backplane; a first electrode layer disposed on a side of the drive backplane; a pixel definition layer disposed on a side, distal to the drive backplane, of the first electrode layer; an organic light-emitting layer disposed on a side, distal to the drive backplane, of the pixel definition layer, wherein the organic light-emitting layer comprises: a plurality of organic material layers stacked in a direction perpendicular to and away from the drive backplane, and a portion of the organic material layer disposed inside the partition groove is separated from a portion of the organic material layer disposed outside the partition groove; and a second electrode layer disposed on a side, distal to the drive backplane, of the organic light-emitting layer.

Abstract: Methods, systems, and devices for wireless communications are described. In some examples, a base station may schedule a multi-transmission reception point (mTRP) UE for concurrent uplink and sidelink transmissions based on interference measure. For example, abase station may determine an amount of interference associated with resources used for sidelink communications between the mTRP UE and a second UE. Based on the determined amount of interference, the base station may transmit a resource grant to the mTRP UE indicating a first set of resource for transmitting one or more uplink messages to the base station and a second set of resources for transmitting one or more sidelink messages to the second UE, where the first set of resources and the second set of resources at least partially overlap in time.

Abstract: A liquid-conducting atomization mechanism (10) includes a vertical ceramic member (100) and a heating screen plate assembly (200). the vertical ceramic member (100) includes a liquid receiving portion (110) and a liquid conduction mounting portion (120) that are connected to each other. Connection between the liquid conduction mounting portion (120) and the liquid receiving portion (110) is a connection plane. An atomization gas exit surface (122) is formed on an outside of the liquid conduction mounting portion (120). The heating screen plate assembly (200) includes a heating portion (210). The heating portion (210) is embedded in the atomization gas exit surface (122).

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, a second nitride-based transistor, and a thermal resistor. The first nitride-based transistor is disposed over the second nitride-based semiconductor layer and applies the 2DEG region as an own channel. The second nitride-based transistor is disposed over the second nitride-based semiconductor layer and applying the 2DEG region as an own channel. The temperature sensor is disposed over the second nitride-based semiconductor layer and between first and second nitride-based transistors. The temperature sensor is in a strip shape and at least turns twice in a region between first and second nitride-based transistors.