Abstract: The present invention provides a nickel-based superalloy material, which comprises 0.06 wt % or less carbon, 11.61˜11.93 wt % chromium, 1.52˜2.85 wt % titanium, 5.89˜6.08 wt % aluminum, 0.009 wt % or less boron, 0.07 wt % or less zirconium, 2.16˜2.18 wt % niobium, 4.22˜4.29 wt % molybdenum, and the balance being composed of nickel and incidental impurities, whereby the effect of obtaining the nickel-based superalloy with better mechanical properties can be achieved.

Abstract: A preparation method of high purity and densified tungsten-titanium metal which mixes titanium metal powder and tungsten metal powder together; adds metallic nitrates (such as nickel nitrate) as combustion improvers; then taking into the account of the characteristics of metal nitrate, which is soluble in alcohols to form a liquidous precursor, adds metal powder to mix together thoroughly, so that the sintering agent is expected to be colloid and uniformly spread among the tungsten-titanium metal powder. The preparation method significantly reduces the ratio of the combustion improver during the preparation of the high purity and densified tungsten-titanium target material.

Abstract: A high creep-resistant equiaxed grain nickel-based superalloy. The high creep-resistant equiaxed grain nickel-based superalloy is characterized that the chemical compositions in weight ratios include Cr in 8.0 to 9.5 wt %, W in 9.5 to 10.5 wt %, Co in 9.5 to 10.5 wt %, Al in 5.0 to 6.0 wt %, Ti in 0.5 to 1.5 wt %, Mo in 0.5 to 1.0 wt %, Ta in 2.5 to 4.0 wt %, Hf in 1.0 to 2.0 wt %, Ir in 2.0 to 4.0 wt %, C in 0.1 to 0.2 wt %, B in 0.01 to 0.1 wt %, Zr in 0.01 to 0.10 wt %, and the remaining part formed by Ni and inevitable impurities.

Abstract: A preparation method of high purity and densified tungsten-titanium metal which mixes titanium metal powder and tungsten metal powder together; adds metallic nitrates (such as nickel nitrate) as combustion improvers; then taking into the account of the characteristics of metal nitrate, which is soluble in alcohols to form a liquidous precursor, adds metal powder to mix together thoroughly, so that the sintering agent is expected to be colloid and uniformly spread among the tungsten-titanium metal powder. The preparation method significantly reduces the ratio of the combustion improver during the preparation of the high purity and densified tungsten-titanium target material.

Abstract: A heating carrier device for use on a sputtering cathode assembly has a heating carrier for heating a sputtering target to control a sputtering target temperature; a magnetic component for generating a magnetic field; a thermal insulation component disposed between the heating carrier and the magnetic component; and a cooling system for cooling the magnetic component. Therefore, the heating carrier device reduces the bonding strength of the sputtering target, reduces the particle size of sputtering products, and grows high-quality, uniform thin films.

Abstract: A high creep-resistant equiaxed grain nickel-based superalloy. The high creep-resistant equiaxed grain nickel-based superalloy is characterized that the chemical compositions in weight ratios include Cr in 8.0 to 9.5 wt %, W in 9.5 to 10.5 wt %, Co in 9.5 to 10.5 wt %, Al in 5.0 to 6.0 wt %, Ti in 0.5 to 1.5 wt %, Mo in 0.5 to 1.0 wt %, Ta in 2.5 to 4.0 wt %, Hf in 1.0 to 2.0 wt %, Ir in 2.0 to 4.0 wt %, C in 0.1 to 0.2 wt %, B in 0.01 to 0.1 wt %, Zr in 0.01 to 0.10 wt %, and the remaining part formed by Ni and inevitable impurities.

Abstract: In an apparatus for quantifying the amount of evaporation deposition of a solid substance and its method, the apparatus is connected to a reaction chamber, and a solid substance to be evaporated, a heating source and a load cell are disposed in a heating chamber. The load cell is for detecting the weight of the solid substance, and the reduced weight of the solid substance to be evaporated per unit time is equal to the mass flow of the reaction gas, so that the status of the reaction gas can be known by the weight simultaneously. When the solid substance is heated to a state to form the reaction gas, the heating chamber reaches a saturated vapor pressure greater than a vacuum background pressure of the reaction chamber, the reaction gas continues to flow along the pipeline stably towards the reaction chamber to manufacture a thin film.

Abstract: A method of preparing a tungsten metal material with high purity, comprising the steps of (A) providing a tungsten metal powder to mix with a metal nitrate to form a mixed powder slurry; (B) ball-grinding the mixed powder slurry to obtain a uniformly mixed powder; (C) sintering the uniformly mixed powder to obtain the tungsten metal material with high purity. Accordingly, the tungsten metal material with purity more than 99.9% can be prepared, so as to prepare the tungsten metal target.

Abstract: A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials.

Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.

Abstract: In a method for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.

Abstract: In a method and apparatus for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.

Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.

Abstract: A high-conductivity thin-film structure for reducing metal contact resistance is disposed between a substrate and at least a metal electrode of a photoelectric component, characterized in that the thin-film structure has a first conductive layer and a second conductive layer, wherein the first conductive layer is a non-crystalline transparent conductive thin-film deposited on a lateral surface of the substrate, and the second conductive layer is a crystalline transparent conductive thin-film deposited on a lateral surface of the first conductive layer, wherein another surface of the second conductive layer is in contact with the metal electrode to serve as a conduction medium between the first conductive layer and the metal electrode. Therefore, the thin-film structure exhibits high conductivity, high transmittance, low contact resistance toward the metal electrode, and insusceptibility to unfavorable effects of coarseness of the surface of the substrate.

Abstract: In a method and apparatus for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract: A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials.

Abstract: A method for preparing a scandium-doped hafnium oxide film, includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

Abstract: A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.