Abstract: One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

Abstract: A loading unit (100) including a shipping member (200) is provided. The shipping member (200) is receivable on a distal end of the loading unit (100) in a first orientation to prevent movement of a pusher assembly (130) from a first to a second position and in a second orientation to effect separation of the loading unit (100) from a surgical stapling device (10).

Abstract: A surgical stapling apparatus includes a handle, an elongated body, a firing assembly, and a stapling assembly. The body extends from the handle and includes an engagement member rotatably supported on to a distal portion of the body. The engagement member defines an engagement slot and is axially movable about the body from a retracted position to an advanced position. The firing assembly includes a trigger, firing link, and pusher link. The pusher link is movably supported for distal translation through the body in response to actuation of the trigger. The stapling assembly houses a plurality of surgical staples and includes an outer shell having an engagement tab. The engagement member is rotatable relative to the body and the stapling assembly to releasably position the engagement tab within the engagement slot, thereby securing the stapling assembly at the distal end of the body.

Abstract: A shallow trench isolation (STI) structure is formed from a conventional STI trench structure formed of first dielectric material extending into the substrate. The conventional STI structure undergoes further processing, including removing a first portion of the dielectric material and adjacent portions of the semiconductor substrate to create a first recess, and then removing another portion of the dielectric material to create a second recess in just the dielectric material. A nitride layer is formed above remaining dielectric material and on the sidewalls of the substrate. A second dielectric material is formed on the spacer layer and fills the remainder of first and second recesses. The nitride layer provides an “inner spacer” between the first insulating material and the second insulating material and also separates the substrate from the second insulating material.

Abstract: A shallow trench isolation (STI) structure is formed from a conventional STI trench structure formed of first dielectric material extending into the substrate. The conventional STI structure undergoes further processing, including removing a first portion of the dielectric material and adjacent portions of the semiconductor substrate to create a first recess, and then removing another portion of the dielectric material to create a second recess in just the dielectric material. A nitride layer is formed above remaining dielectric material and on the sidewalls of the substrate. A second dielectric material is formed on the spacer layer and fills the remainder of first and second recesses. The nitride layer provides an “inner spacer” between the first insulating material and the second insulating material and also separates the substrate from the second insulating material.

Abstract: A surgical stapling apparatus includes a handle, an elongated body, a firing assembly, and a stapling assembly. The body extends from the handle and includes an engagement member rotatably supported on to a distal portion of the body. The engagement member defines an engagement slot and is axially movable about the body from a retracted position to an advanced position. The firing assembly includes a trigger, firing link, and pusher link. The pusher link is movably supported for distal translation through the body in response to actuation of the trigger. The stapling assembly houses a plurality of surgical staples and includes an outer shell having an engagement tab. The engagement member is rotatable relative to the body and the stapling assembly to releasably position the engagement tab within the engagement slot, thereby securing the stapling assembly at the distal end of the body.

Abstract: One illustrative method disclosed includes, among other things, forming a gate around an initial fin structure and above a layer of insulating material, and performing a fin trimming process on an exposed portion of the initial fin structure in the source/drain region so as to produce a reduced-size fin portion positioned above a surface of a layer of insulating material in the source/drain region of the device, wherein the the reduced-size fin portion has a second size that is less than the first size.

Abstract: One illustrative method disclosed includes, among other things, forming a gate around an initial fin structure and above a layer of insulating material, and performing a fin trimming process on an exposed portion of the initial fin structure in the source/drain region so as to produce a reduced-size fin portion positioned above a surface of a layer of insulating material in the source/drain region of the device, wherein the the reduced-size fin portion has a second size that is less than the first size. In this example, the method also includes forming a conformal epi semiconductor material on the reduced-size fin portion and forming a conductive source/drain contact structure that is conductively coupled to and wrapped around the conformal epi semiconductor material.

Abstract: A surgical stapling device includes a handle assembly, a central body extending distally from the handle assembly, and a head portion including an anvil assembly and a shell assembly. The shell assembly includes an annular knife having an inner surface and an outer surface and first and second angled surfaces defining a blade edge. The first angled surface defines an angle S1 with a longitudinal axis of the stapling device and the second angled surface defines an angle S2 with the longitudinal axis of the stapling device.

Abstract: The disclosure relates to forming single diffusion break (SDB) and end isolation regions in an integrated circuit (IC) structure, and resulting structures. An IC structure according to the disclosure includes: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on and extending transversely across the plurality of fins between a pair of the plurality of gate structures; at least one single diffusion break (SDB) region positioned within the insulator region and one of the plurality of fins, the at least one SDB extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region positioned laterally adjacent to a lateral end of one of the plurality of gate structures.

Abstract: One illustrative method disclosed includes, among other things, forming a fin spacer adjacent a lower portion of a fin that is comprised of a fin spacer material, forming a conformal layer of a second spacer material on the exposed sidewalls and the upper surface of the fin, on the fin spacer and adjacent a gate structure of the FinFET device, wherein the second spacer material is a different material than the fin spacer material, performing an etching process to remove the second conformal layer from above the fin spacer to thereby re-expose the sidewalls of the fin above the fin spacer and the upper surface of the fin while forming a gate spacer comprising the second spacer material adjacent the gate structure, and forming an epi semiconductor material on the exposed sidewalls and upper surface of the fins above the first fin spacer.

Abstract: A surgical stapling device (10) having an indicator mechanism that is movable between first, second and third positions. The first position of the indicator (26) indicates to a clinician that the jaws of the surgical stapling device (10) have yet to be approximated. The second position of the indicator (26) indicates to a clinician that the jaws of the surgical stapling device (10) are approximated. The third position of the indicator (26) indicates to a clinician that the surgical stapling device (10) has been fired and is depleted of staples.

Abstract: A surgical stapling apparatus (10) having an adjustable minimum tissue gap (G) is provided. The surgical stapling apparatus (10) includes a proximal handle portion (20), an elongated central body portion (30), a distal head portion (40), an anvil assembly (50), and an approximation assembly (100). The approximation assembly (100) includes a drive screw (140), a screw stop (150), and a screw extension (160). The adjustable minimum tissue gap (G) can be adjusted by selectively securing the screw extension (160) to the drive screw (140) using a first or second pair of openings (145, 147) of the drive screw (140). A method is also provided to determine the minimum tissue gap (G) of the surgical stapling apparatus (10).

Abstract: A loading unit (100) including a shipping member (200) is provided. The shipping member (200) is receivable on a distal end of the loading unit (100) in a first orientation to prevent movement of a pusher assembly (130) from a first to a second position and in a second orientation to effect separation of the loading unit (100) from a surgical stapling device (10).

Abstract: Methods of facilitating fabrication of circuit structures are provided which include, for instance: providing a structure with a film layer; modifying an etch property of the film layer by implanting at least one species of element or molecule into the upper portion of the film layer, the etch property of the film layer remaining unmodified beneath the upper portion; and subjecting the structure and film layer with the modified etch property to an etching process, the modified etch property of the film layer facilitating the etching process. Modifying the etch property of the upper portion of the film layer may include making the upper portion of the film layer preferentially susceptible or preferentially resistant to the etching process depending on the circuit fabrication approach being facilitated.

Abstract: A surgical stapling apparatus includes a handle, an elongated body, a firing assembly, and a stapling assembly. The body extends from the handle and includes an engagement member rotatably supported on to a distal portion of the body. The engagement member defines an engagement slot and is axially movable about the body from a retracted position to an advanced position. The firing assembly includes a trigger, firing link, and pusher link. The pusher link is movably supported for distal translation through the body in response to actuation of the trigger. The stapling assembly houses a plurality of surgical staples and includes an outer shell having an engagement tab. The engagement member is rotatable relative to the body and the stapling assembly to releasably position the engagement tab within the engagement slot, thereby securing the stapling assembly at the distal end of the body.

Abstract: A semiconductor structure includes a semiconductor substrate, an active region and a dummy gate structure disposed over the active region. A sacrificial conformal layer, including a bottom oxide layer and a top nitride layer are provided over the dummy gate structure and active region to protect the dummy gate during source and drain implantation. The active region is implanted using dopants such as, a n-type dopant or a p-type dopant to create a source region and a drain region in the active region, after which the sacrificial conformal layer is removed.

Abstract: Methods of facilitating fabrication of circuit structures are provided which include, for instance: providing a structure with a film layer; modifying an etch property of the film layer by implanting at least one species of element or molecule into the upper portion of the film layer, the etch property of the film layer remaining unmodified beneath the upper portion; and subjecting the structure and film layer with the modified etch property to an etching process, the modified etch property of the film layer facilitating the etching process. Modifying the etch property of the upper portion of the film layer may include making the upper portion of the film layer preferentially susceptible or preferentially resistant to the etching process depending on the circuit fabrication approach being facilitated.

Abstract: A semiconductor structure includes a semiconductor substrate, an active region and a dummy gate structure disposed over the active region. A sacrificial conformal layer, including a bottom oxide layer and a top nitride layer are provided over the dummy gate structure and active region to protect the dummy gate during source and drain implantation. The active region is implanted using dopants such as, a n-type dopant or a p-type dopant to create a source region and a drain region in the active region, after which the sacrificial conformal layer is removed.

Abstract: A mounting apparatus includes a base and at least one pair of shoe plates. The shoe plates are formed on a top surface of the base. Each of the shoe plates comprises a plurality of grooves respectively on top surfaces thereof for holding at least one connector. It is simple and economical to using the mounting apparatus for holding a connector during a wire wrapping process.