Abstract: A multi-orientation fingertip planar tactile feedback device includes a planar tactile feedback actuator. The planar tactile feedback actuator includes a holder and a feedback mechanism, a holding hole and an accommodating cavity are provided in the holder, one end of the holding hole penetrates through the holder, the other end is communicated with the accommodating cavity, the feedback mechanism includes a plurality of feedback parts that are arranged on cavity walls of the accommodating cavity respectively, and each feedback part includes a base, an air bag block and a baffle which are sequentially connected. A structure is simple; a finger touch force can be adjusted; five pairs of electrified coils are arranged, and force feedback vector synthesis can be performed therebetween; a direction of the force feedback generated by the electrified coil can be consistent with a direction of tactile feedback of the distal finger segment by the baffle.

Abstract: A high anti-interference microsystem based on System In Package (SIP) for a power grid is provided. The high anti-interference microsystem comprises a ceramic cavity, a ceramic substrate, a magnetic cover plate, a digital signal processing circuit, an analog signal conditioning circuit and a shield, wherein the ceramic cavity supports the ceramic substrate, the magnetic cover plate is in sealed contact with the ceramic cavity, and the ceramic substrate is arranged in a cavity formed by the ceramic cavity and the magnetic cover plate; a sealed shell of the microsystem based on SIP is composed of the magnetic cover plate and the ceramic cavity; the digital signal processing circuit and the analog signal conditioning circuit are arranged on the ceramic substrate and respectively process received signals to be processed; the shield covers an outer side of the sealed shell and is used for shielding external magnetic field interference.

Abstract: A method includes disposing a plurality of active solder pads and at least one mechanical support solder pad on the substrate. The plurality of active solder pads provide areas for mechanical bonding of the substrate to at least one device contact pad disposed on a semiconductor die. The at least one mechanical support solder pad provides an area for mechanical bonding of the substrate to at least one dummy device contact pad disposed on the semiconductor die. The method further includes mechanically bonding the substrate to the semiconductor die by forming solder joints between the plurality of active solder pads and the at least one device contact pad, and between the at least one mechanical support pad and the at least one dummy device contact pad.

Abstract: The present disclosure relates to a semiconductor arrangement, comprising: a substrate; a first group of semiconductor elements forming a first switch; a second group of semiconductor elements forming a second switch. The substrate comprises: a first electrically conductive area; a second electrically conductive area; a third electrically conductive area; a fourth electrically conductive area. The semiconductor arrangement further comprises: a first electrical connection line; a second electrical connection line; and a third electrical connection line. The first electrical connection line, the second electrical connection line, the third electrical connection line and the fourth area of the substrate are dimensioned according to a symmetry criterion to enable a simultaneous current flow through the load paths of the semiconductor elements of the first group as well as a simultaneous current flow through the load paths of the semiconductor elements of the second group.

Abstract: A packaged structure includes a first substrate and a second substrate. Power units are disposed on a first surface of the first substrate. A control unit is disposed on a first surface of the second substrate, and the second substrate is connected to one end of the first substrate. The control unit is electrically connected to the power units. The control unit is configured to: receive an external input signal, collect an internal sensing signal, and control the power units to work. The first surface of the second substrate is disposed on a same side as the first surface of the first substrate. When the structure is used, a signal part and a power part are integrated. The power units are disposed on the first substrate, and the control unit is disposed on the second substrate, so that the signal part and the power part can be separately disposed.

Abstract: An encapsulation structure of a power module is disclosed in this application, which includes a power module and a liquid cooler. The power module includes a power module body, a metal baseplate, and heat dissipation finned tubes. A front side of the metal baseplate is connected to the power module body, and a back side of the metal baseplate is connected to the heat dissipation finned tubes. The metal baseplate has a protrusion part protruding. There are a plurality of grooves on a fluid pipe of the liquid cooler, a cavity exists between two adjacent grooves of the plurality of grooves, and the cavity is configured to communicate the two adjacent grooves. The power module body is lapped on the groove, a back side of the protrusion part is in contact with an edge surface of the groove, and the heat dissipation finned tubes are placed in the groove.

Abstract: A substrate, a packaged structure, and an electronic device are provided. The substrate is configured to be electrically connected to a chip. The chip includes a power terminal and a signal terminal. The substrate includes a first substrate and a second substrate mounted on the first substrate. The first substrate includes a first layout, and the first layout is configured to be electrically connected to the power terminal. The second substrate includes a second layout, and the second layout is configured to be electrically connected to the signal terminal. A spacing between lines of the second layout is less than a spacing between lines of the first layout. The substrate provided in this application has a small size and high integration.

Abstract: In a general aspect, a method for producing a semiconductor device assembly can include defining a cavity in a conductive spacer, and electrically and thermally coupling a semiconductor die with the conductive spacer, such that the semiconductor die is at least partially embedded in the cavity. The semiconductor die can have a first surface having active circuitry included therein, a second surface opposite the first surface, and a plurality of side surfaces each extending between the first surface of the semiconductor die and the second surface of the semiconductor die. The method can also include electrically coupling a direct bonded metal (DBM) substrate with the first surface of the semiconductor die.

Abstract: In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.

Abstract: In a general aspect, a method for producing a semiconductor device assembly can include defining a cavity in a conductive spacer, and electrically and thermally coupling a semiconductor die with the conductive spacer, such that the semiconductor die is at least partially embedded in the cavity. The semiconductor die can have a first surface having active circuitry included therein, a second surface opposite the first surface, and a plurality of side surfaces each extending between the first surface of the semiconductor die and the second surface of the semiconductor die. The method can also include electrically coupling a direct bonded metal (DBM) substrate with the first surface of the semiconductor die.

Abstract: In a general aspect, a semiconductor device assembly can include a semiconductor die having a first surface including active circuitry, a second surface opposite the first surface, and a plurality of side surfaces. Each of the plurality of side surfaces can extend between the first surface of the semiconductor die and the second surface of the semiconductor die. The semiconductor device assembly can also include a conductive spacer having a cavity defined therein. The semiconductor die can be electrically and thermally coupled with the conductive spacer, the semiconductor die being at least partially embedded in the cavity.

Abstract: A method includes disposing a plurality of active solder pads and at least one mechanical support solder pad on the substrate. The plurality of active solder pads provide areas for mechanical bonding of the substrate to at least one device contact pad disposed on a semiconductor die. The at least one mechanical support solder pad provides an area for mechanical bonding of the substrate to at least one dummy device contact pad disposed on the semiconductor die. The method further includes mechanically bonding the substrate to the semiconductor die by forming solder joints between the plurality of active solder pads and the at least one device contact pad, and between the at least one mechanical support pad and the at least one dummy device contact pad.

Abstract: Implementations of semiconductor packages may include: one or more die electrically coupled to a lead frame. The lead frame may be included within a housing. The semiconductor package may also include a set of signal leads extending from the housing, a set of power leads extending from the housing, and a plurality of press fit pins each fixedly coupled to the set of signal leads and the set of power leads. The set of signal leads and the set of power leads may be configured to couple with a substrate.

Abstract: Implementations of semiconductor packages may include: one or more die electrically coupled to a lead frame. The lead frame may be included within a housing. The semiconductor package may also include a set of signal leads extending from the housing, a set of power leads extending from the housing, and a plurality of press fit pins each fixedly coupled to the set of signal leads and the set of power leads. The set of signal leads and the set of power leads may be configured to couple with a substrate.

Abstract: In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.

Abstract: Implementations of semiconductor packages may include: one or more die electrically coupled to a lead frame. The lead frame may be included within a housing. The semiconductor package may also include a set of signal leads extending from the housing, a set of power leads extending from the housing, and a plurality of press fit pins each fixedly coupled to the set of signal leads and the set of power leads. The set of signal leads and the set of power leads may be configured to couple with a substrate.

Abstract: In a general aspect, a semiconductor device assembly can include a semiconductor die having a first surface including active circuitry, a second surface opposite the first surface, and a plurality of side surfaces. Each of the plurality of side surfaces can extend between the first surface of the semiconductor die and the second surface of the semiconductor die. The semiconductor device assembly can also include a conductive spacer having a cavity defined therein. The semiconductor die can be electrically and thermally coupled with the conductive spacer, the semiconductor die being at least partially embedded in the cavity.

Abstract: Implementations of semiconductor packages may include: one or more die electrically coupled to a lead frame. The lead frame may be included within a housing. The semiconductor package may also include a set of signal leads extending from the housing, a set of power leads extending from the housing, and a plurality of press fit pins each fixedly coupled to the set of signal leads and the set of power leads. The set of signal leads and the set of power leads may be configured to couple with a substrate.

Abstract: In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.

Abstract: In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.