Patents by Inventor Huicong Hong
Huicong Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10975492Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: GrantFiled: January 11, 2019Date of Patent: April 13, 2021Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Publication number: 20190249328Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: ApplicationFiled: January 11, 2019Publication date: August 15, 2019Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Patent number: 10208396Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: GrantFiled: March 4, 2016Date of Patent: February 19, 2019Assignee: Soraa, Inc.Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Publication number: 20160319457Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: ApplicationFiled: March 4, 2016Publication date: November 3, 2016Applicant: MOMENTIVE PERFORMANCE MATERIALS INC.Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Patent number: 9279193Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: GrantFiled: November 9, 2006Date of Patent: March 8, 2016Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Patent number: 8357945Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.Type: GrantFiled: October 26, 2006Date of Patent: January 22, 2013Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Peter Micah Sandvik
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Publication number: 20120017825Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: ApplicationFiled: November 9, 2006Publication date: January 26, 2012Applicant: General Electric CompanyInventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Patent number: 7859008Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: GrantFiled: January 9, 2007Date of Patent: December 28, 2010Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Patent number: 7786503Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: GrantFiled: November 13, 2006Date of Patent: August 31, 2010Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Patent number: 7704324Abstract: An apparatus and method for processing materials in supercritical fluids is disclosed. The apparatus includes a capsule configured to contain a supercritical fluid, a high strength enclosure disposed about the capsule and a sensor configured to sense pressure difference between an interior and an exterior of the capsule. The apparatus also includes a pressure control device configured to adjust pressure difference of the capsule in response to the pressure difference sensed by the sensor. The apparatus further includes at least one dividing structure disposed within the capsule that divides the capsule into a seed growing chamber and a nutrient chamber.Type: GrantFiled: January 25, 2005Date of Patent: April 27, 2010Assignee: General Electric CompanyInventors: Mark Philip D'Evelyn, Robert Arthur Giddings, Fred Sharifi, Subhrajit Dey, Huicong Hong, Joseph Alexander Kapp, Ashok Kumar Khare
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Patent number: 7642122Abstract: A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 104 cm?2.Type: GrantFiled: October 5, 2007Date of Patent: January 5, 2010Assignee: Momentive Performance Materials Inc.Inventors: Steven Alfred Tysoe, Dong-Sil Park, John Thomas Leman, Mark Philip D'Evelyn, Kristi Jean Narang, Huicong Hong
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Patent number: 7638815Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: GrantFiled: January 9, 2007Date of Patent: December 29, 2009Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Patent number: 7582498Abstract: A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.Type: GrantFiled: December 6, 2005Date of Patent: September 1, 2009Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Xian-An Cao, Anping Zhang, Steven Francis LeBoeuf, Huicong Hong, Dong-Sil Park, Kristi Jean Narang
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Patent number: 7368015Abstract: An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.Type: GrantFiled: October 13, 2005Date of Patent: May 6, 2008Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Victor Lienkong Lou, Thomas Francis McNulty, Huicong Hong
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Publication number: 20080087919Abstract: A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 104 cm?2.Type: ApplicationFiled: October 5, 2007Publication date: April 17, 2008Inventors: Steven Tysoe, Dong-Sil Park, John Leman, Mark D'Evelyn, Kristi Narang, Huicong Hong
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Publication number: 20080006844Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: ApplicationFiled: January 9, 2007Publication date: January 10, 2008Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20080008855Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: ApplicationFiled: January 9, 2007Publication date: January 10, 2008Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070215887Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.Type: ApplicationFiled: October 26, 2006Publication date: September 20, 2007Applicant: General Electric CompanyInventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Peter Micah Sandvik
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Publication number: 20070158785Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: ApplicationFiled: November 13, 2006Publication date: July 12, 2007Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070040181Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: ApplicationFiled: March 15, 2006Publication date: February 22, 2007Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik