Abstract: The embodiments of the present disclosure provide a photoelectric detector, a method for manufacturing the photoelectric detector, and a detection device. The method for manufacturing the photoelectric detector includes: forming a thin film transistor array layer on a base substrate; forming an organic layer on a side of the thin film transistor array layer facing away from the base substrate; and patterning the organic layer to form a first via hole which enables a signal transmission layer in the thin film transistor array layer to be exposed; and depositing a photoelectric conversion device in the first via hole.

Abstract: An array substrate, a manufacturing method thereof, a flat panel detector and an image apparatus are disclosed. The array substrate includes a base substrate, a low-temperature polysilicon thin film transistor disposed on the base substrate, and a photoelectric converter connected with a first electrode of the thin film transistor. The first electrode includes a first conductive layer, the photoelectric converter is disposed on a side of the first conductive layer facing away from the base substrate, and the first conductive layer includes a material resistant to etching in a process of forming the photoelectric converter. The first electrode is a source electrode or a drain electrode of the thin film transistor.

Abstract: The embodiments of the present disclosure provide a photoelectric detector, a method for manufacturing the photoelectric detector, and a detection device. The method for manufacturing the photoelectric detector includes: forming a thin film transistor array layer on a base substrate; forming an organic layer on a side of the thin film transistor array layer facing away from the base substrate; and patterning the organic layer to form a first via hole which enables a signal transmission layer in the thin film transistor array layer to be exposed; and depositing a photoelectric conversion device in the first via hole.

Abstract: A film patterning method is provided. The method comprises: performing a dry etching process on a film to be patterned, so as to form a patterned film; removing a suspended particle on the patterned film; and performing another dry etching process on the patterned film after the suspended particle is removed, to form a final pattern of the film. By moving or completely removing the suspended particle on the patterned film and then performing another dry etching process on the patterned film to etch away the etching residue, existence of the etching residue is completely avoided in the final pattern of the film, so that the product yield is improved and the product quality is ensured.