Abstract: A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

Abstract: Proposed are a semiconductor layer including Sn-based perovskite including a chloride-based compound and an iodine-based compound, a thin film transistor including the same, and a manufacturing method thereof. The semiconductor layer includes a perovskite complex, where the perovskite complex includes a Sn-based perovskite and an additive including at least one selected from the group consisting of a first additive and a second additive, the first additive includes at least one selected from the group consisting of a chloride-based compound and an acetate-based compound, and the second additive includes an iodide-based compound (iodide). Thus, a transistor, an environmentally friendly material free of Pb, having high charge mobility and being easily industrialized, can be provided.

Abstract: Disclosed is a thin-film transistor including a substrate including a gate electrode formed thereon, a gate insulating film disposed on an entire face of the substrate, a semiconductor layer disposed on an entire face of the gate insulating film, and source and drain electrodes disposed on the semiconductor layer so as to be spaced apart from each other, wherein the semiconductor layer includes cesium tin triiodide (CsSnI3) or methylammonium tin triiodide (MASnI3), wherein the semiconductor layer further contains an additive.

Abstract: A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1: [A]2[B][X]6:Z??Formula 1 wherein, in Formula 1, A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof, B includes Sn4+, X includes a monovalent anion, and Z includes a metal cation or a metalloid cation.

Abstract: A method including acquiring page data after receiving an access request for a target page, the page data comprising data corresponding to a plurality of tab pages, and the plurality of tab pages comprising a first tab page and at least one second tab page, wherein the first tab page comprises links to a plurality of first application services, and the links are used to jump to render render pages of the first application services; the second tab page corresponds to a render page of a second application service; and switching to the second tab page to display the render page of the second application service by receiving a switching operation performed between the plurality of tab pages. An access to a plurality of application services is achieved more efficiently, and meanwhile, excessive impact on traffic balance among the plurality of application services is avoided.

Abstract: A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.