Abstract: The present disclosure provides a voltage conversion circuit and a chip. The voltage conversion circuit includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor and a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, and a phase inverter; the source of the first PMOS transistor is connected to an I/O power supply, the drain thereof is connected with a first node, and the gate thereof is connected with a second node; the drain of the first NMOS transistor is connected with the first node, the source thereof is grounded, and the gate thereof is connected to an input signal.

Abstract: A clock circuit comprises an oscillator circuit and a power-on reset circuit, the oscillator circuit comprises a current generating module and a loop oscillation module connected together; the current generating module is used for outputting a control current to the loop oscillation module; the loop oscillation module is used for outputting an oscillation signal with a set frequency under action of the control current; and the power-on reset circuit is connected to the loop oscillation module and is used for providing an enabling control signal to the loop oscillation module after a power supply is powered on to the power-on reset circuit and the oscillator circuit.

Abstract: Some embodiments of the disclosure provides polyacrylonitrile (PAN) and a preparation method and use thereof. The method includes the following steps. Mixing raw materials for polymerization to obtain a suspension comprising the PAN. The raw materials include an acrylonitrile monomer, a first auxiliary monomer, a second auxiliary monomer, a polymerization medium, an initiator, a chain transfer agent, and a settling agent. Removing unreacted monomers and unreacted polymerization medium in the suspension to obtain the PAN. After subsequent removal of monomers, removal of a polymerization medium, washing, and drying, a PAN powder is obtained. In some embodiments, the preparation method of the PAN has a wide adjustable range of a PAN copolymerization composition, a low viscosity of a polymerization system, a high concentration of a polymerized monomer, and a strong anti-scaling ability.

Abstract: The present invention provides a clock circuit comprises an oscillator circuit and a power-on reset circuit, the oscillator circuit comprises a current generating module and a loop oscillation module connected together; the current generating module is used for outputting a control current to the loop oscillation module; the loop oscillation module is used for outputting an oscillation signal with a set frequency under action of the control current; and the power-on reset circuit is used for providing an enabling control signal to the loop oscillation module after a power supply is powered on; the power-on reset circuit is connected to the loop oscillation module.

Abstract: A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of to photodiode to transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method is removing fixed pattern noise and an image sensor are further provided.

Abstract: Some embodiments of the disclosure provides polyacrylonitrile (PAN) and a preparation method and use thereof. The method includes the following steps. Mixing raw materials for polymerization to obtain a suspension comprising the PAN. The raw materials include an acrylonitrile monomer, a first auxiliary monomer, a second auxiliary monomer, a polymerization medium, an initiator, a chain transfer agent, and a settling agent. Removing unreacted monomers and unreacted polymerization medium in the suspension to obtain the PAN. After subsequent removal of monomers, removal of a polymerization medium, washing, and drying, a PAN powder is obtained. In some embodiments, the preparation method of the PAN has a wide adjustable range of a PAN copolymerization composition, a low viscosity of a polymerization system, a high concentration of a polymerized monomer, and a strong anti-scaling ability.

Abstract: The present invention disclosures a memory array structure, comprising an array composed of multiple memory devices arranged in rows and columns, each of the rows is set with a row leading-out wire, and each of the columns is set with a column leading-out wire, memory devices are correspondingly positioned at intersection points of each row leading-out wire and each column leading-out wire; wherein, the first terminal of each of the memory devices is individually connected to the row leading-out wire of the same row, and the second terminal of each of the memory devices is connected to a first terminal of a switch in the same column, the second terminal of the switch is connected to the column leading-out wire of the same column; wherein, each of the rows is set with one to multiple the switches, and the first terminal of each of the switches is connected to one to all of the second terminals of the memory devices in the same column.

Abstract: A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a signal of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of the photodiode to be transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method of removing fixed pattern noise and an image sensor are further provided.

Abstract: A single-layered linear neural network based on a cell synapse structure comprising a pre-synapse and a post-synapse, the pre-synapse comprises a plurality of precursor resistors, number of the precursor resistors is m, one end of the precursor resistors in the pre-synapse is jointly connected with an intermediate point, and another end of the precursor resistors is respectively connected with each of a plurality of precursor signal input ends, number of the precursor signal input ends is m; the precursor signal input ends are used for receiving input voltages; the post-synapse comprises a plurality of posterior resistors, number of the precursor resistors is n, one end of the posterior resistors in the post-synapse is jointly connected with the intermediate point, and another end of the posterior resistors is respectively connected with each of a plurality of posterior signal output ends, number of the posterior signal output ends is n; the posterior signal output ends are used for outputting currents.

Abstract: The disclosure provides a voltage-controlled magnetic anisotropic magnetic random access memory. The memory comprises a virtual array, a memory array and a peripheral circuit, wherein the memory array comprises memory cells with X rows and Y columns; the virtual array comprises virtual cells with X rows and one column; the peripheral circuit comprises at least one data sampling-decision-output circuit, the data sampling-decision-output circuit comprises a sensitive amplifier circuit and a logic circuit in series, and are simultaneously connected to the data sampling-decision-output circuit in the peripheral circuit at the same time. By changing the width-length ratio of a differential circuit in the sensitive amplifier circuit and adding the virtual array, the problem that the storage state of the voltage-controlled magnetic anisotropy magnetic random access memory cannot be determined is effectively solved, and the risk of resistance deviation under different process conditions also can be avoided.

Abstract: The disclosure provides a voltage-controlled magnetic anisotropic magnetic random access memory. The memory comprises a virtual array, a memory array and a peripheral circuit, wherein the memory array comprises memory cells with X rows and Y columns; the virtual array comprises virtual cells with X rows and one column; the peripheral circuit comprises at least one data sampling-decision-output circuit, the data sampling-decision-output circuit comprises a sensitive amplifier circuit and a logic circuit in series, and are simultaneously connected to the data sampling-decision-output circuit in the peripheral circuit at the same time. By changing the width-length ratio of a differential circuit in the sensitive amplifier circuit and adding the virtual array, the problem that the storage state of the voltage-controlled magnetic anisotropy magnetic random access memory cannot be determined is effectively solved, and the risk of resistance deviation under different process conditions also can be avoided.