Abstract: A display device is disclosed. The display device includes display unit and a negative refractive index functional layer on the display unit. The negative refractive index functional layer has a negative refractive index with respect to light from the display unit. A method for fabricating the display device is also disclosed.

Abstract: The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

Abstract: The present disclosure generally relates to the field of detection technology. A sensor includes a base substrate; a voltage dividing photodiode on the base substrate; and a detecting photodiode on the base substrate. The voltage dividing photodiode may include a first electrode and a second electrode arranged in a stack. The detecting photodiode may include a third electrode and a fourth electrode arranged in a stack. The voltage dividing photodiode is configured to operate substantially permanently in a dark state. The detecting photodiode is configured to operate with a reverse bias applied by the first power terminal and the second power terminal, so as to detect a light intensity.

Abstract: The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

Abstract: A display substrate, a display panel, and a display device. The display substrate includes a substrate, and a plurality of polygonal pixels arranged in an array on the substrate. Each polygonal pixel includes a plurality of sub-pixels and a photoelectric sensor. An orthographic projection of the plurality of sub-pixels on the substrate and an orthogonal projection of the photoelectric sensor on the substrate do not overlap with each other. The display substrate, the display panel and the display device of the embodiments of the present disclosure can maximize the collection of optical signals, thereby improving the efficiency of the photoelectric sensor and the accuracy of a fingerprint identification in certain applications.

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node.