Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may communicate in a network based at least in part on using a first connection configuration. The UE may communicate in the network based at least in part using a second connection configuration instead of the first connection configuration. The UE may autonomously switch to reusing the first connection configuration for communicating in the network based at least in part on the first connection configuration being stored at the UE. Numerous other aspects are described.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a non-terrestrial network (NTN) entity, a message that is associated with an uplink grant. The UE may select, based at least in part on the message, either a cell-specific offset or an updated offset that is indicated after initial access, as a timing offset that accounts for a propagation delay between a base station of the NTN and the UE. The UE may transmit, to the NTN entity, an uplink communication using the timing offset. Numerous other aspects are described.

Abstract: Certain aspects of the present disclosure provide techniques for bandwidth part (BWP) switching by frequency shifting and/or by transmission configuration indicator (TCI) state configuration. A method that may be performed by a user equipment (UE) includes receiving a BWP configuration indicating a frequency location and bandwidth of at least a first BWP; receiving signaling indicating at least one frequency shift to determine a second BWP from a frequency location of the first BWP; and communicating on the second BWP after performing a BWP switch from the first BWP to the second BWP based on the at least one frequency shift.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive system information associated with a set of neighboring cells included in a non-terrestrial network (NTN). The UE may be connected to or camped in a current cell included in the NTN. The current cell may be associated with a current platform. The UE may monitor a neighboring cell, of the set of neighboring cells, based at least in part on the system information. Numerous other aspects are provided.

Abstract: RACH occasion repetition and PRACH format selection in an NTN are disclosed. The base station may determine, based on at least one beam, a first PRACH configuration for at least one first UE and a second PRACH configuration for at least one second UE. The base station may transmit, to at least one of the at least one first UE or the at least one second UE, an indication of the first PRACH configuration and the second PRACH configuration. The UE, based on whether it is a first UE or a second UE, may select, based on the received indication, the first PRACH configuration or the second PRACH configuration for at least one beam. The UE may initiate, via the at least one beam, a RACH procedure for the selected first PRACH configuration or the selected second PRACH configuration.

Abstract: The apparatus may be provided to improve a PAPR in at least one of a single-carrier FDM signal or DFT-s-OFDM. The apparatus may be configured to encode a set of information bits with a channel encoder; generate, based on a set of encoded bits from the channel encoder, a set of amplitude symbols using a distribution matching function; generate a set of modulated symbols based on the set of amplitude symbols; and transmit, to a second device, a signal based on the set of modulated symbols. An apparatus may be configured to receive, from a first device, a signal based on a set of modulated symbols and derive a set of encoded bits based on the received set of modulated symbols using a distribution matching function.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a wireless communication device may obtain, at an access stratum (AS) layer, an indication of an inter-satellite link (ISL) activation that is to take place at an activation time. The wireless communication device may receive communications. The wireless communication device may buffer the communications in a buffer at the AS layer. The wireless communication device may release the communications from the buffer to an upper protocol layer at a rate of release that is to change between a transition start time and the activation time. Numerous other aspects are described.

Abstract: Non-terrestrial networks (NTNs) may establish uplink (UL) and downlink (DL) radio frame timing structures to efficiently account for propagation delay and propagation delay variation associated with communications in the NTN. NTNs may manage (synchronize) radio frame timing structures of base stations (e.g., satellites) and user equipment (UEs) in the NTN. Further, UEs may determine timing advance (TA) values to be applied to UL transmissions based on their respective scheduling offset (e.g., offset in UL and DL radio frame timing structures), as well as based on propagation delay or round trip time (RTT). As such, served UEs may determine UL timing such that UL transmissions from the UEs to a satellite arrives at the satellite in a time synchronized manner. In other cases, a satellite may determine UL timing, based on reception timing, such that various UEs in the NTN may implement uniform UL and DL radio frame timing structures.

Abstract: Methods, systems, and devices for wireless communication at a user equipment (UE) are described. A UE may operate by asynchronously transmitting code division multiple access (CDMA) uplink signals to a network entity. The UE may transmit the CDMA signals via an uplink channel that may be shared with orthogonal frequency multiplexing (OFDM) signaling transmitted by one or more other UEs. The UE may indicate to the network entity a capability for communicating with CDMA waveforms and may use CDMA waveforms based on transmitting the indication. The UE may also receive one or more parameters associated with using the CDMA waveforms, and may use CDMA waveforms based on the one or more parameters. The uplink channel may be a random access channel (RACH) and may support RACH transmissions, or may be a data channel and support data transmissions.

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may release a connection with a first network entity and determine a first virtual coverage area of the UE based on a geographic location of the UE associated with the release of the connection. The UE may obtain a message that includes area information. The area information may be indicative of one or more second virtual coverage areas, which the UE may use in determining whether to monitor for a paging early indication (PEI). Based on the first virtual coverage area and the one or more second virtual coverage areas may monitor for a paging message, such as the PEI or downlink control information (DCI) associated with a paging occasion.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a network node may transmit, and a user equipment (UE) may receive, signaling that indicates at least a first random access channel (RACH) occasion (RO) partition and a second RO partition. The first RO partition may be associated with different uplink transmission capabilities than the second RO partition. The UE may select an RO in the first RO partition or the second RO partition based at least in part on a metric that relates to an uplink transmission capability of the UE. The UE may transmit, and the network node may receive, a preamble in the selected RO to initiate a RACH procedure. Numerous other aspects are described.

Abstract: A method of manufacturing an embedded split-gate flash memory device is provided. The method includes: performing shallow trench isolation and chemical mechanical planarization on a semiconductor substrate comprising a flash memory region and a logic region, wherein a first oxide is formed on the semiconductor substrate and a first nitride is formed on the first oxide; forming a first photoresist over the logic region, and removing the first nitride disposed in the flash memory region; removing the first photoresist, and depositing a floating gate polysilicon material over the semiconductor substrate; performing chemical mechanical planarization on the floating gate polysilicon material; forming a control gate in the flash memory region; etching the floating gate polysilicon material to form a floating gate; forming a second photoresist over the flash memory region, and removing the first oxide and the first nitride disposed in the logic region; and removing the second photoresist.

Abstract: A method for manufacturing a memory device may include obtaining a substrate structure that includes a substrate, an oxide material layer positioned on the substrate, a polysilicon material layer positioned on the oxide material layer, a first control gate and a second control gate positioned on the polysilicon material layer, and an offset oxide layer positioned between the first control gate and the second control gate. The method may further include the following steps: removing, using the offset oxide layer as a first mask, a portion of the polysilicon material layer for forming a polysilicon structure that includes a first step structure; forming a masking oxide layer on the offset oxide layer; removing, using the masking oxide layer as a second mask, a portion of the polysilicon structure for forming a floating gate polysilicon member that includes the first step structure and a second step structure.

Abstract: A method of manufacturing an embedded split-gate flash memory device is provided. The method includes: performing shallow trench isolation and chemical mechanical planarization on a semiconductor substrate comprising a flash memory region and a logic region, wherein a first oxide is formed on the semiconductor substrate and a first nitride is formed on the first oxide; forming a first photoresist over the logic region, and removing the first nitride disposed in the flash memory region; removing the first photoresist, and depositing a floating gate polysilicon material over the semiconductor substrate; performing chemical mechanical planarization on the floating gate polysilicon material; forming a control gate in the flash memory region; etching the floating gate polysilicon material to form a floating gate; forming a second photoresist over the flash memory region, and removing the first oxide and the first nitride disposed in the logic region; and removing the second photoresist.

Abstract: A method for manufacturing a memory device may include obtaining a substrate structure that includes a substrate, an oxide material layer positioned on the substrate, a polysilicon material layer positioned on the oxide material layer, a first control gate and a second control gate positioned on the polysilicon material layer, and an offset oxide layer positioned between the first control gate and the second control gate. The method may further include the following steps: removing, using the offset oxide layer as a first mask, a portion of the polysilicon material layer for forming a polysilicon structure that includes a first step structure; forming a masking oxide layer on the offset oxide layer; removing, using the masking oxide layer as a second mask, a portion of the polysilicon structure for forming a floating gate polysilicon member that includes the first step structure and a second step structure.