Abstract: A phase correction concept is introduced to improve the performance of a spatially multiplexed optic. In a specific example, the optic is a diffractive lens. A phase offset is added to extend the depth of field of the diffractive lens and increase its focusing intensity. This can result in increased signal-to-noise ratio. These diffractive lenses may be used for imaging, focusing, and/or delivering light to an area of interest. They may be used to realize miniaturized medical imaging based on different imaging modalities such as optical coherence tomography, Raman spectroscopy, and fluorescence microscopy. They may also be used for different purposes and applications, for example laser ablation.

Abstract: An intelligent vehicle capturing apparatus for a high-pier bridge includes: a double-layer metal protective net; and a support unit and an actuation unit connected to the double-layer metal protective net. The double-layer metal protective net is mounted to a backside of the high-pier bridge through the support unit. The actuation unit includes a hydraulic link mechanism. The hydraulic link mechanism is connected to one end of the double-layer metal protective net. The hydraulic link mechanism is moved to unwind the double-layer metal protective net on the backside of the high-pier bridge to capture a vehicle. In this way, the apparatus stops and buffers a vehicle that is about to rush out of a high-pier bridge.

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.

Abstract: A phase correction concept is introduced to improve the performance of a spatially multiplexed optic. In a specific example, the optic is a diffractive lens. A phase offset is added to extend the depth of field of the diffractive lens and increase its focusing intensity. This can result in increased signal-to-noise ratio. These diffractive lenses may be used for imaging, focusing, and/or delivering light to an area of interest. They may be used to realize miniaturized medical imaging based on different imaging modalities such as optical coherence tomography, Raman spectroscopy, and fluorescence microscopy. They may also be used for different purposes and applications, for example laser ablation.

Abstract: An intelligent vehicle capturing apparatus for a high-pier bridge includes: a double-layer metal protective net, support unit and actuation unit connected thereto. The protective net mounts to a high-pier bridge backside through the support unit. The actuation unit includes a hydraulic link mechanism connected to one end of the protective net. The hydraulic link mechanism unwinds the protective net to capture a vehicle. The apparatus stops a vehicle rushing off a high-pier bridge. Upon completion, a hydraulic system drives a third hydraulic cylinder in a support rod on the high-pier bridge backside driving a rolling shaft rotating, winding and placing a protective net on the high-pier bridge backside. The apparatus has a simple structure, is practical and easily used, useful on hazardous high-pier bridges protecting vehicle passengers and avoiding traffic accidents resulting from vehicles rushing out of the high-pier bridges.

Abstract: A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode region has a second ion doping concentration. The first electrode and the second electrode are disposed on a side of the active layer in the thickness direction. The first electrode is coupled to the first electrode region, and the second electrode is coupled to the second electrode region. The third doped pattern is disposed between the first electrode and the first electrode region, and in direct contact with the first electrode and the first electrode region. The third doped pattern has a third ion doping concentration, and the third ion doping concentration is different from the first ion doping concentration.

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.