Patents by Inventor Huiqin ZHANG

Huiqin ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250116872
    Abstract: A phase correction concept is introduced to improve the performance of a spatially multiplexed optic. In a specific example, the optic is a diffractive lens. A phase offset is added to extend the depth of field of the diffractive lens and increase its focusing intensity. This can result in increased signal-to-noise ratio. These diffractive lenses may be used for imaging, focusing, and/or delivering light to an area of interest. They may be used to realize miniaturized medical imaging based on different imaging modalities such as optical coherence tomography, Raman spectroscopy, and fluorescence microscopy. They may also be used for different purposes and applications, for example laser ablation.
    Type: Application
    Filed: February 28, 2024
    Publication date: April 10, 2025
    Inventors: Mohammadreza Khorasaninejad, Huiqin Zhang, Jiang You
  • Patent number: 12146274
    Abstract: An intelligent vehicle capturing apparatus for a high-pier bridge includes: a double-layer metal protective net; and a support unit and an actuation unit connected to the double-layer metal protective net. The double-layer metal protective net is mounted to a backside of the high-pier bridge through the support unit. The actuation unit includes a hydraulic link mechanism. The hydraulic link mechanism is connected to one end of the double-layer metal protective net. The hydraulic link mechanism is moved to unwind the double-layer metal protective net on the backside of the high-pier bridge to capture a vehicle. In this way, the apparatus stops and buffers a vehicle that is about to rush out of a high-pier bridge.
    Type: Grant
    Filed: September 20, 2021
    Date of Patent: November 19, 2024
    Assignee: SHANDONG UNIVERSITY
    Inventors: Zeying Yang, Weisong Qu, Qianyi Yang, Cuiping Qu, Fengjin Zhao, Tianmin Wang, Da Zhang, Peng Zhang, Liqiang Gao, Huiqin Zhang, Jie Liu, Gongfeng Xin, Chuanchang Xu, Yangchun Wang, Naixuan Ma, Li Tian, Hetao Hou, Ke Wu, Yinglin Sun
  • Patent number: 11996413
    Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: May 28, 2024
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhaohui Qiang, Li Qiang, Chao Luo, Huiqin Zhang, Rui Huang, Zhi Wang
  • Patent number: 11953698
    Abstract: A phase correction concept is introduced to improve the performance of a spatially multiplexed optic. In a specific example, the optic is a diffractive lens. A phase offset is added to extend the depth of field of the diffractive lens and increase its focusing intensity. This can result in increased signal-to-noise ratio. These diffractive lenses may be used for imaging, focusing, and/or delivering light to an area of interest. They may be used to realize miniaturized medical imaging based on different imaging modalities such as optical coherence tomography, Raman spectroscopy, and fluorescence microscopy. They may also be used for different purposes and applications, for example laser ablation.
    Type: Grant
    Filed: October 10, 2023
    Date of Patent: April 9, 2024
    Assignee: Leadoptik Inc.
    Inventors: Mohammadreza Khorasaninejad, Huiqin Zhang, Jiang You
  • Publication number: 20230098897
    Abstract: An intelligent vehicle capturing apparatus for a high-pier bridge includes: a double-layer metal protective net, support unit and actuation unit connected thereto. The protective net mounts to a high-pier bridge backside through the support unit. The actuation unit includes a hydraulic link mechanism connected to one end of the protective net. The hydraulic link mechanism unwinds the protective net to capture a vehicle. The apparatus stops a vehicle rushing off a high-pier bridge. Upon completion, a hydraulic system drives a third hydraulic cylinder in a support rod on the high-pier bridge backside driving a rolling shaft rotating, winding and placing a protective net on the high-pier bridge backside. The apparatus has a simple structure, is practical and easily used, useful on hazardous high-pier bridges protecting vehicle passengers and avoiding traffic accidents resulting from vehicles rushing out of the high-pier bridges.
    Type: Application
    Filed: March 10, 2021
    Publication date: March 30, 2023
    Applicant: SHANDONG UNIVERSITY
    Inventors: Zeying YANG, Weisong QU, Qianyi YANG, Cuiping QU, Fengjin ZHAO, Tianmin WANG, Da ZHANG, Peng ZHANG, Liqiang GAO, Huiqin ZHANG, Jie LIU, Gongfeng XIN, Chuanchang XU, Yangchun WANG, Naixuan MA, Li TIAN, Hetao HOU, Ke WU, Yinglin SUN
  • Publication number: 20220416091
    Abstract: A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode region has a second ion doping concentration. The first electrode and the second electrode are disposed on a side of the active layer in the thickness direction. The first electrode is coupled to the first electrode region, and the second electrode is coupled to the second electrode region. The third doped pattern is disposed between the first electrode and the first electrode region, and in direct contact with the first electrode and the first electrode region. The third doped pattern has a third ion doping concentration, and the third ion doping concentration is different from the first ion doping concentration.
    Type: Application
    Filed: June 15, 2021
    Publication date: December 29, 2022
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhaohui QIANG, Chao LI, Huiqin ZHANG, Li QIANG, Feng GUAN, Zhiwei LIANG
  • Publication number: 20220020780
    Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.
    Type: Application
    Filed: June 9, 2020
    Publication date: January 20, 2022
    Inventors: Zhaohui QIANG, Li QIANG, Chao LUO, Huiqin ZHANG, Rui HUANG, Zhi WANG