Abstract: A downhole throttling device based on wireless control includes an inlet nozzle, a throttling assembly, an electrical sealing cylinder, a gas guide cylinder, a lower adapter sleeve, an end socket, a female sleeve, and electrical components. The inlet nozzle is connected to the throttling assembly, the throttling assembly is connected to the electrical sealing cylinder and the gas guide cylinder, the electrical sealing cylinder and the gas guide cylinder are both connected to the lower adapter sleeve, the lower adapter sleeve is respectively connected to the end socket and the female sleeve, and the electrical components are arranged in the electrical sealing cylinder. A throttling effect is achieved by detecting the temperature and pressure in a tube by a temperature/pressure sensor in the electrical components and controlling a motor to rotate a movable valve in the throttling assembly by a circuit control assembly, thereby achieving wireless control over downhole throttling.

Abstract: The present invention provides a method for improving transformation efficiency of a plant. The method according to the present invention comprises the use of a nucleic acid encoding the amino acid sequence set forth in SEQ ID NO: 2 or 4, or a nucleic acid encoding a polypeptide comprising an amino acid sequence having at least 85% identity with the amino acid sequence set forth in SEQ ID NO: 2 or 4, and having a function of improving transformation efficiency of a plant.

Abstract: A semiconductor device for use in an optoelectronic integrated circuit; the device comprising: a group four substrate, a waveguide, and a group III/V multilayer stack; wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide; wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.

Abstract: Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.

Abstract: A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.

Abstract: The present invention provides a method for improving transformation efficiency of a plant. The method according to the present invention comprises the use of a nucleic acid encoding the amino acid sequence set forth in SEQ ID NO: 2 or 4, or a nucleic acid encoding a polypeptide comprising an amino acid sequence having at least 85% identity with the amino acid sequence set forth in SEQ ID NO: 2 or 4, and having a function of improving transformation efficiency of a plant.

Abstract: Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.

Abstract: A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: A method for acquiring recommending information, a terminal and a server are provided. In the method, a first terminal receives a second telephone number affiliated with a second terminal sent by a recommender using a third terminal. The first terminal sends a request for recommending information to a server according to the first telephone number of the first terminal, a telephone number of the recommender, and the second telephone number, so that the server generates recommending information according to the request for recommending information, and pushes the recommending information to the second terminal affiliated with the second telephone number.

Abstract: A method for acquiring recommending information, a terminal and a server are provided. In the method, a first terminal receives a second telephone number affiliated with a second terminal sent by a recommender using a third terminal. The first terminal sends a request for recommending information to a server according to the first telephone number of the first terminal, a telephone number of the recommender, and the second telephone number, so that the server generates recommending information according to the request for recommending information, and pushes the recommending information to the second terminal affiliated with the second telephone number.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10?8torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.

Abstract: A method for acquiring recommending information, a terminal and a server are provided. In the method, a first terminal receives a second telephone number affiliated with a second terminal sent by a recommender using a third terminal The first terminal sends a request for recommending information to a server according to the first telephone number of the first terminal, a telephone number of the recommender, and the second telephone number, so that the server generates recommending information according to the request for recommending information, and pushes the recommending information to the second terminal affiliated with the second telephone number.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: A message recognition method and corresponding device are provided. In the method, the device receives a message, which includes text content and a number associated with a sender of the message. The device analyzes the text content of the message and acquires a user name corresponding to the number associated with the sender. The device determines the user name as the communication message sender's name and displays the sender's name in the message.

Abstract: The present invention provides a reproducible preliminary in-situ oxide removal step for patterned self-assisted III-V semiconductor nanowire growth. Here “in-situ” means located within the same treatment environment or apparatus as the nanowire growth process, e.g. with a molecular beam epitaxy (MBE) apparatus or the like. Providing an in-situ process may prevent the formation of a thin oxide layer during transfer of the substrate into the nanowire growth apparatus.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10?8torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.