Patents by Inventor Hul-Won Yang

Hul-Won Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor, method of manufacturing the same and flat panel display device having the same
    Patent number: 7994500
    Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
    Type: Grant
    Filed: April 16, 2009
    Date of Patent: August 9, 2011
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Min-Kyu Kim, Jong-Han Jeong, Tae-Kyung Ahn, Jae-Kyeong Jeong, Yeon-Gon Mo, Jin-Seong Park, Hyun-Joong Chung, Kwang-Suk Kim, Hul-Won Yang
  • THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    Publication number: 20090321732
    Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
    Type: Application
    Filed: April 16, 2009
    Publication date: December 31, 2009
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Min-Kyu Kim, Jong-Han Jeong, Tae-Kyung Ahn, Jae-Kyeong Jeong, Yeon-Gon Mo, Jin-Seong Park, Hyun-Joong Chung, Kwang-Suk Kim, Hul-Won Yang