Abstract: An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

Abstract: A semiconductor manufacturing system includes a loadlock chamber, a low level vacuum pump connected to said loadlock chamber so as to create a low level vacuum in the loadlock chamber, a processing chamber in which a semiconductor manufacturing process is carried out while the processing chamber is maintained at a high level vacuum, a gate valve interposed between and connecting the loadlock chamber and the processing chamber, and a pressure relieving device for reducing the pressure difference between the low level vacuum of the loadlock chamber and the high level vacuum of the processing chamber at the time the gate valve is opened. The pressure relieving device is a high level vacuum pump which can be dedicated to the loadlock chamber or which can be the same pump as that used to evacuate the processing chamber. The high level vacuum pump is connected to the loadlock chamber by an air valve.

Abstract: There is provided a method of etching metallic film for a semiconductor device, in which a semiconductor substrate with a metallic film exposed in a film pattern is inserted onto a chuck in a chamber of an electrostatic shielded radio frequency (ESRF) inductive-coupled plasma source, the ESRF inductive-coupled plasma source also including a coil connected to an upper electrode, a lower electrode connected to the chuck, a gas supply assembly, a pressure control assembly and a temperature control assembly. An etching gas is supplied to the chamber at a predetermined etch gas supply rate. Pressure inside the chamber is maintained at a predetermined pressure level. The upper and lower electrodes are powered with predetermined upper and lower powers, respectively, at predetermined upper and lower RFs, respectively. The chamber walls are cooled to a predetermined temperature.

Abstract: A UV irradiation apparatus, which includes a UV lamp installed in a chamber for generating UV rays; a vacuum chuck installed below the UV lamp for supporting and moving a wafer; and, a reflector surrounding the UV lamp for concentrating UV rays on the vacuum chuck. The apparatus further includes heating blocks for controlling the temperature at both sides of the vacuum chuck. Thus, it is possible to maintain an essentially constant temperature around the wafer supported by the vacuum chuck. As a result of the temperature control, when a protection tape attached to the front side of the wafer is irradiated with UV rays, an adhesive of the protective tape can be effectively degraded by a chemically reaction under optimum conditions, to thereby easily detach the protection tape from the wafer.