Patents by Inventor Hun-chul Shin

Hun-chul Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12245389
    Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.
    Type: Grant
    Filed: January 19, 2024
    Date of Patent: March 4, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Yong Choi, Young Chul Kim, Ji Su Kim, Hun Sung Kim, Sung Yong Park, Jin Soo Shin, Dae Sik Yoon, Yong Yeon Hwang
  • Patent number: 5942803
    Abstract: A method for forming an opening in an integrated circuit device with an improved aspect ratio includes the following steps. An inter-insulating layer is formed on a surface of a substrate. A recess having a first width is then formed in the inter-insulating layer. Next, a hole having a second width is formed in the inter-insulating layer at a base of the recess, wherein the first width is greater than the second width. Thus, an opening is formed to have a cross-sectional shape of a step where its upper portion formed by the recess which is wider than its lower portion formed by the hole. Accordingly, open circuits caused by voids formed in the opening in subsequent metal deposition steps may be prevented.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: August 24, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myoung-seob Shim, Hun-chul Shin, Kyung-seok Oh
  • Patent number: 5846596
    Abstract: Methods of forming field oxide isolation regions having sloped edges which facilitate uniform step coverage of subsequently patterned metallization, etc. but do not encroach upon semiconductor active regions, include the steps of patterning a first mask on a face of a semiconductor substrate to define an active region thereunder and then forming a pad insulation layer on the face of the substrate and in abutting relation to edges of the first mask. Oxidation resistant spacers are then formed on the edges of the first mask and on the pad insulation layer so that field oxide isolation regions having sloped edges can be formed by growing the pad insulation layer through oxidation so that it extends away from the edges of the first mask and does not undercut the first mask to form parasitic bird's beak oxide extensions.
    Type: Grant
    Filed: February 4, 1997
    Date of Patent: December 8, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myoung-seob Shim, Hun-chul Shin