Abstract: A solid state image sensor including (a) a plurality of photodiodes arranged such that the photodiodes in odd number columns and the photodiodes in even number columns straddle each other, for generating image signal charges by converting light signals into electrical signals, (b) vertical charge coupled devices each formed between the photodiode columns for vertically transmitting the image signal charges generated in each of the photodiodes, and (c) a plurality of microlenses each arranged matched with each of the plurality of photodiodes over each of the photodiodes. Each of the photodiodes is shaped like a peanut shell having a narrower middle part. The photodiodes shape is thereby matched to the focusing shape of each matching microlens, optimizing the cell layout efficiency.

Abstract: A p type well is formed on an n type substrate and photodiode and VCCD regions are repeatedly at predetermined intervals in turns on the surface of the p type well.In an interline transfer image sensor, the p type well is formed on the n type substrate and the photodiode and VCCD region of predetermined intervals are repeatedly formed in turn on the surface of the p type well. The p.sup.+ type channel ion stop layer is formed at both edges of the VCCD region and the pinning voltage is applied to the p.sup.+ type channel stop layer. Accordingly, the variable potential of the potential contour of the VCCD region is increased and the storing capacity of the charge and the efficiency of the charge transfer are maximized side by side.

Abstract: A CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising a P type layer formed underneath and surrounding said N type VCCD region, an N type layer formed underneath and surrounding said P type layer, a P type well formed underneath and surrounding said N type layer, and an N type substrate formed under said P type well, said substrate being adapted and arranged for the application thereto of a shutter voltage. In accordance with the present invention, the CCD image sensor is capable of preventing an overflow drain caused by error charges or excess charges resulting from a smear. Therefore, the photoelectric efficiency can be increased in a wavelength of the red color type wherein the amount of light energy is small.