Abstract: Provided is a method of forming a ceramic wire. In the method, a ceramic precursor film is deposited on a wire substrate. Then, the wire substrate on which the ceramic precursor film is deposited is treated by heating. For treating the wire substrate by heating, a temperature of the wire substrate and/or an oxygen partial pressure of the wire substrate are controlled such that the ceramic precursor film is in a liquid state and an epitaxy ceramic film is formed from the liquid ceramic precursor film on the wire substrate.

Abstract: A super conductor is formed by a process including a first step of forming liquid-phase rare earth-copper-barium oxide by heat treating a superconductor precursor including a rare earth element, barium, and copper, a second step of forming a first superconductor of the rare earth-copper-barium oxide that is epitaxially grown from the liquid-phase rare earth-copper-barium oxide, and a third step of forming a second superconductor of the rare earth-copper-barium oxide by heat treating the first superconductor, wherein the heat treatment of the third step is performed in an atmosphere in which the rare earth-copper-barium oxide has no liquid phase.

Abstract: Provided is a method of forming a superconducting body. The method includes providing amorphous rare-earth-copper-barium oxide and performing a heat treatment on the amorphous rare-earth-copper-barium oxide to form a superconductor containing distributed rare-earth oxide grains.

Abstract: Provided is a method of forming a superconducting wire. In the method, a buffer layer is formed on a substrate. Then, a superconducting precursor film is formed on the substrate formed with the pinning seed layer. Thereafter, the substrate formed with the superconducting precursor film is heat-treated to form a superconducting film including magnetic flux pinning centers on the substrate. The magnetic flux pinning centers comprise at least one element included in the pinning seed layer, and at least one element included in the superconducting precursor film.

Abstract: Provided is a method of forming a ceramic wire. In the method, a ceramic precursor film is deposited on a wire substrate. Then, the wire substrate on which the ceramic precursor film is deposited is treated by heating. For treating the wire substrate by heating, a temperature of the wire substrate and/or an oxygen partial pressure of the wire substrate are controlled such that the ceramic precursor film is in a liquid state and an epitaxy ceramic film is formed from the liquid ceramic precursor film on the wire substrate.

Abstract: This invention relates to: (1) a compound represented by the formula (V), its tautomer and a mixture of the same; (2) a process for producing the compound represented by the above-mentioned formula (V), its tautomer or a mixture of the same, which comprises reacting N-vinylpiperidone represented by the formula (I) with a nicotinate represented by the formula (II), wherein R represents a lower alkyl group, in the presence of a sodium alkoxide; (3) a process for producing a pyridine derivative represented by the formula (III), which comprises producing the compound represented by the formula (V), its tautomer or a mixture of the same by the process as described in the above (2), and then treating the obtained compound with an acid; and (4) a process for producing a pyridine derivative represented by the formula (IV), in which the treatment with an acid as described in the above (3) is followed by another treatment with a base.