Abstract: An apparatus for detecting an organic compound and an apparatus for manufacturing a display device, the apparatus for detecting an organic compound including an infrared light emitting unit that irradiates infrared rays toward a gas-phase organic compound used as a process gas in an atmospheric pressure equipment; a first window that separates the organic compound from the infrared light emitting unit; an infrared detection unit that measures an infrared absorbance of the organic compound; and a second window that separates the organic compound from the infrared detection unit, wherein infrared absorption regions of the first window and the second window are different from an infrared absorption region of the organic compound.

Abstract: An apparatus for detecting an organic compound and an apparatus for manufacturing a display device, the apparatus for detecting an organic compound including an infrared light emitting unit that irradiates infrared rays toward a gas-phase organic compound used as a process gas in an atmospheric pressure equipment; a first window that separates the organic compound from the infrared light emitting unit; an infrared detection unit that measures an infrared absorbance of the organic compound; and a second window that separates the organic compound from the infrared detection unit, wherein infrared absorption regions of the first window and the second window are different from an infrared absorption region of the organic compound.

Abstract: A plasma generating unit for a process monitoring device includes a hollow first electrode extending in a length direction and a second electrode extending in the length direction and positioned within and displaced from the first electrode with a distance therebetween. The first electrode has an inner diameter and the second electrode has an outer diameter selected to vary the distance between the electrodes in the length direction so that the plasma generating unit generates a plasma by ionizing a gas flowing between the electrodes at a different position in the length direction based on a pressure of the gas.

Abstract: A sputtering apparatus includes a substrate, a sputtering target disposed to face the substrate and formed of a sputtering material to be deposited on the substrate, wherein the sputtering target collides with an ionized gas particle and the sputtering material is separated from the sputtering target by the collision of the ionized gas particle with the sputtering target is deposited on the substrate, a supporter that supports a lower surface and a side surface of the sputtering target, and an insulating cover that covers an upper surface of the supporter supporting the side surface of the sputtering target. The insulating cover includes a plurality of recesses recessed downwardly from an upper surface of the insulating cover and a plurality of protrusions protruding upwardly between the recesses.

Abstract: A plasma generating unit for a process monitoring device includes a hollow first electrode extending in a length direction and a second electrode extending in the length direction and positioned within and displaced from the first electrode with a distance therebetween. The first electrode has an inner diameter and the second electrode has an outer diameter selected to vary the distance between the electrodes in the length direction so that the plasma generating unit generates a plasma by ionizing a gas flowing between the electrodes at a different position in the length direction based on a pressure of the gas.

Abstract: A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC.

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.

Abstract: The present invention provides an apparatus for detecting metal concentration from an area including compounding a solution that includes a metal dissolved by a solvent, and a reagent combined with metal ions dissolved in the solution and referring a difference of absorption rates between a compound of the solvent and reagent and a compound of the solution and reagent.

Abstract: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Abstract: Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Abstract: An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.

Abstract: A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.

Abstract: A contact hole forming method and a method of manufacturing semiconductor device using the same may include forming a layer on a substrate; anisotropically etching the layer to form a dummy contact hole exposing the substrate; isotropically etching a sidewall of the dummy contact hole to form a contact hole by alternatively and repeatedly supplying an etching solution including a fluoride salt in a low-polarity organic solvent and deionized water to the dummy contact hole. The methods increase reliability of semiconductor memory devices.

Abstract: An apparatus for cleaning semiconductor substrates includes a chamber having a cleaning room and a drying room disposed over the cleaning room. The cleaning room and the drying room are separated or placed in communication with one another by a separation plate. An exhaust path is formed at a central portion of the separation plate. As de-ionized water (DI water) filling the cleaning room is drained during a dry process, the inside of the drying room is decompressed, and a drying fluid in the drying room flows from the drying room to the cleaning room along the exhaust path.

Abstract: A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system.

Abstract: A drying apparatus and method of drying a wafer including supplying a drying material for drying a wafer and controlling a flow of the drying material to uniformly or substantially dry the wafer. The flow of the drying material may be controlled by a vent unit including at least one part for controlling the flow of the drying material to uniformly or substantially uniformly dry the wafer.

Abstract: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).