Abstract: The present disclosure provides a partition wall for an image display device, the partition wall which satisfies 0.8?A/B<1.0 and 0.85?C/B<1.0 when the line width at a thickness of 95% from the lowermost end portion of the partition wall is A, the maximum line width at a thickness of 50 to 90% from the lowermost end portion of the partition wall is B, and the line width at a thickness of 10% from the lowermost end portion of the partition wall is C, with respect to the total thickness of the partition wall, a manufacturing method thereof, and an image display device including the partition wall. The partition wall for an image display device according to the present disclosure can be effectively applied to the manufacture of the color conversion pixels through the inkjet process, and the image display device including the partition wall has excellent luminance and maintains high luminance even when observed from the side surface, thereby exhibiting an effect of excellent viewing angle properties.

Abstract: A flow control valve assembly with low noise is provided. The flow control valve assembly uses silicone to define a flow passage to reduce the friction with respect to a fluid flowing therethrough while preventing the occurrence of turbulent flow of the fluid, thereby minimizing the generation of noise. The flow control valve assembly comprises a pipe having a through hole therein and formed with a plunger guide on a lateral surface thereof, a plunger installed within the plunger guide of the pipe to move upwardly and downwardly along the plunger guide, a silicone wall installed on the inner surface of the pipe to define a flow passage in the middle thereof, a clamping joint installed at the inlet of the pipe to clamp the silicone wall to the pipe, and a stopping joint installed at the outlet of the pipe to prevent the silicone wall from being thrust out of the pipe.

Abstract: A flow control valve assembly with low noise is provided. The flow control valve assembly uses silicone to define a flow passage to reduce the friction with respect to a fluid flowing therethrough while preventing the occurrence of turbulent flow of the fluid, thereby minimizing the generation of noise. The flow control valve assembly comprises a pipe having a through hole therein and formed with a plunger guide on a lateral surface thereof, a plunger installed within the plunger guide of the pipe to move upwardly and downwardly along the plunger guide, a silicone wall installed on the inner surface of the pipe to define a flow passage in the middle thereof, a clamping joint installed at the inlet of the pipe to clamp the silicone wall to the pipe, and a stopping joint installed at the outlet of the pipe to prevent the silicone wall from being thrust out of the pipe.

Abstract: A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.

Abstract: A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.