Abstract: An improved method for fabricating a NOR flash memory device having a cell array region and a periphery region near the cell array region is disclosed. The bit line contact regions of the cell array region are formed independently, using a different mask, from the word line contact regions of the cell array region, and the active contact region and the gate contact region of the periphery region, thereby allowing stable formation of all contact regions without etching damage. Also, plug ions are implanted into the bit line contact region of the cell array region, and a metal plug is formed in the bit line contact region and the word line contact region of the cell array region, and the active contact region and the gate contact region of the periphery region.