Abstract: The method for preparing a super absorbent polymer according to the present disclosure has a feature that it is possible to reduce the generation of a fine powder during production of the super absorbent polymer while maintaining excellent physical properties of the super absorbent polymer, including centrifuge retention capacity (CRC) and vortex removal time.

Abstract: A degassing apparatus for a secondary battery, and a degassing method using same, is provided. The degassing apparatus includes a drive motor and a jig arm configured to pressurize a first surface of a gas pocket of a battery cell and a second surface opposite the first surface by controlling a separation distance by the operation of a driving motor. The degassing apparatus is capable of performing an effective degassing and sealing process for the battery cell without positional movement of the battery cell during cell activation or after cell activation.

Abstract: The present disclosure relates to an anode for a lithium-metal battery, a manufacturing method of the same, and a lithium-metal battery including the anode. The anode for a lithium-metal battery includes a complex hierarchical structure current collector which includes an inverted pyramid-shaped micro hole pattern and nanostructures provided within the inverted pyramid-shaped micro hole pattern; and a lithium metal which is electrodeposited on the nanostructure of the current collector. As a result, it is possible to increase the life stability of the battery and increase the coulombic efficiency.

Abstract: A semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and a method of cleaning a semiconductor wafer using the cleaning composition are provided. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

Abstract: A circuit board according to an embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer and including a cavity; a pad disposed on the first insulating layer and having a top surface exposed through the cavity; wherein the cavity of the second insulating layer includes: a bottom surface positioned higher than the top surface of the first insulating layer; and an inner wall extending from the bottom surface, wherein the inner wall includes: a first inner wall extending from the bottom surface and having a first inclination angle; and a second inner wall extending from the first inner wall and having a second inclination angle different from the first inclination angle.

Abstract: Disclosed is a display device which includes a display panel, a voltage generator, and a driving controller. The voltage generator generates a driving voltage and determines a voltage level of the driving voltage based on a voltage control signal. A current compensator calculates a load based on previous image data and outputs compensation image data with target luminance by compensating for current image data based on the load. The driving controller turns on the current compensator in a normal mode such that an image is displayed with the target luminance, and turns off the current compensator in a setting mode such that an image corresponding to the current image data is displayed with given reference luminance.

Abstract: A polarization film according to an embodiment includes a first wavelength dispersion layer, and a polarization layer that is disposed on the first wavelength dispersion layer. A wavelength dispersion of the first wavelength dispersion layer satisfies both Relational Expression 1 and Relational Expression 2: [Relational Expression 1] 0.81<DSP 450 nm=R 450 nm/R 550 nm<0.83 [Relational Expression 2] 1.15<DSP 650 nm=R 650 nm/R 550 nm<1.17. In Relational Expression 1 and Relational Expression 2, R(?) denotes a phase difference value in wavelength ?.

Abstract: Provided is a method of improving skin condition by applying to the skin of a subject a cosmetic composition comprising black yeast-derived exosomes as an active ingredient and thereby improving the skin condition, particularly skin elasticity improvement, skin wrinkle reduction, skin texture improvement, skin tone improvement, skin brightness improvement, skin regeneration, skin moisturization, and/or whitening.

Abstract: A semiconductor package according to an embodiment includes a first insulating layer; and a first through electrode part passing through the first insulating layer and having a shape elongated in a first direction; wherein the first through electrode part includes a plurality of first through electrodes spaced apart from each other in a second direction perpendicular to the first direction and a thickness direction; wherein at least one of the plurality of first through electrodes includes a first sub through electrode and a second sub through electrode spaced apart from each other in the first direction; and wherein at least one of the first sub through electrode and the second sub through electrode has a width in the first direction greater than a width in the second direction.

Abstract: A display device according to an embodiment includes a light-emitting device disposed on a substrate and including an emission layer, and a light control layer disposed on the light-emitting device. The light control layer includes a plurality of light blocking patterns extending in a first direction and spaced in a second direction intersecting the first direction, and a transmission layer disposed among the plurality of light blocking patterns and including a transparent organic layer and a transparent inorganic layer that are alternately stacked on each other.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: A display device includes a light emitting element disposed on a substrate to include an emission layer; and a light controller disposed over the light emitting element, the light controller includes light blocking patterns to extend in a first direction and spaced apart in a second direction intersecting the first direction; and a transmission portion disposed between the light blocking patterns to extend in the first direction, and the transmission portion includes a first transparent organic layer; a transparent inorganic layer disposed on the first transparent organic layer; and a second transparent organic layer disposed on the transparent inorganic layer.

Abstract: A conductive composite material, a method of preparing the same, and a secondary battery including the same. The conductive composite material may increase the proportion of an active material when forming an electrode by chemically bonding a conductive material and a binder to each other. A method of preparing the conductive composite material comprises ionizing carbon-based particles in a predetermined polarity, ionizing PTFE particles in a polarity different from that of the carbon-based particles, and chemically bonding the ionized carbon-based particles and the ionized PTFE particles, which are ionized in different polarities, to each other.

Abstract: A substrate treatment apparatus includes: a first bath storing a cleaning solution and having a first opening formed in an upper surface thereof; and a first ultrasonic oscillator installed in the first bath and providing ultrasonic waves toward a surface of the cleaning solution exposed by the first opening to form a water film protruding from the surface of the cleaning solution, wherein a substrate is not immersed in the first bath, and a surface of the substrate is placed adjacent to the first opening and cleaned by the water film.

Abstract: An optical sensing system comprising: a processing circuit; an optical sensor, configured to sense first optical data respectively in first sensing time intervals; and a TOF (Time of Flight) optical sensor, configured to sense second optical data respectively in second sensing time intervals. The processing circuit computes a distance between a first object and the optical sensing system according to the second optical data. The first sensing time intervals do not overlap with the second sensing time intervals.

Abstract: Provided is a method for preparing an oligomer including: supplying a monomer stream and a solvent stream to a reactor to perform an oligomerization reaction to prepare a reaction product; supplying a discharge stream from the reactor including the reaction product to a separation device and supplying a lower discharge stream from the separation device to a settling tank; adding an organic flocculant to the settling tank to settle and remove a polymer and supplying the lower discharge stream from the separation device from which the polymer is removed to a high boiling point separation column; and removing a high boiling point material from the lower portion in the high boiling point separation column and supplying an upper discharge stream including an oligomer to a solvent separation column.

Abstract: An apparatus for manufacturing a semiconductor device includes a substrate transfer unit configured to transfer a substrate, a rail unit including a driving rail extending in a first direction that the substrate transfer unit moves and a stopper on a side of the driving rail in a second direction crossing the first direction, and a lifting unit configured to move in the first direction and a third direction perpendicular to the first and second directions to remove the substrate transfer unit from the rail unit, wherein the lifting unit is configured to contact the stopper to move the stopper from a closed state to an open state.

Abstract: A method for forming a semiconductor die, includes forming an interlayer dielectric layer on a substrate having a semiconductor die region, a seal-ring region, and a scribe line region, forming a metal pad and a test pad on the interlayer dielectric layer, forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad, first etching the passivation dielectric layer and the interlayer dielectric layer existing between the seal-ring region and the scribe line region to a predetermined depth using a plasma etching process, second etching the passivation dielectric layer to expose the metal pad and the test pad, forming a bump on the metal pad, and dicing the substrate while removing the scribe line region by mechanical sawing.

Abstract: A semiconductor package includes a first package substrate having a first region and a second region, which do not overlap each other, a first connection element having a first height on the first region, a first semiconductor chip having a second height connected to the first connection element, a second connection element having a third height on the second region, a third connection element having a fourth height on the second connection element and electrically connected to the second connection element, a second package on the third connection element, the second package including a second package substrate and a second semiconductor chip, and a first mold layer covering at least a portion of the first semiconductor chip, covering at least a portion of the second connection element, covering the first package substrate, exposing upper surfaces of the first semiconductor chip and the second connection element, and having a fifth height.

Abstract: A wafer level package includes: a substrate; an element portion disposed on one surface of the substrate; a cap disposed on the substrate to cover the element portion; a connection portion electrically connected to the element portion; and a bonding portion disposed on an outer side of the connection portion, wherein the bonding portion is disposed on a first surface of one of the substrate and the cap, wherein one end portion of the connection portion is disposed on a second surface having a step difference from the first surface, and wherein the connection portion and the bonding portion are formed of a eutectic material.