Patents by Inventor Hun-Sung LEE

Hun-Sung LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS circuit and method for fabricating the same
    Patent number: 9318390
    Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: April 19, 2016
    Assignee: SK Hynix Inc.
    Inventors: Kyong-Bong Rouh, Shang-Koon Na, Mi-Ri Lee, Hun-Sung Lee
  • CMOS CIRCUIT AND METHOD FOR FABRICATING THE SAME
    Publication number: 20150155207
    Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.
    Type: Application
    Filed: February 10, 2015
    Publication date: June 4, 2015
    Inventors: Kyong-Bong ROUH, Shang-Koon NA, Mi-Ri LEE, Hun-Sung LEE
  • CMOS circuit and method for fabricating the same
    Patent number: 8981486
    Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: March 17, 2015
    Assignee: SK Hynix Inc.
    Inventors: Kyong-Bong Rouh, Shang-Koon Na, Mi-Ri Lee, Hun-Sung Lee
  • CMOS CIRCUIT AND METHOD FOR FABRICATING THE SAME
    Publication number: 20140183650
    Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.
    Type: Application
    Filed: March 18, 2013
    Publication date: July 3, 2014
    Applicant: SK HYNIX INC.
    Inventors: Kyong-Bong ROUH, Shang-Koon NA, Mi-Ri LEE, Hun-Sung LEE