Abstract: A center of pressure (CoP) based control system includes a sensing device and an electronic device connected to the sensing device. The sensing device includes sensors each of which continuously measures force exerted thereon by a subject and generates a sense signal based on a result of the measurement. The electronic device is connected to the sensing device, and receives the sense signals from the respective sensors, generates CoP data associated with a CoP trajectory based on the sense signals, determines whether a turning point exists in the CoP trajectory, generates an indication signal based on a result of the determination, and generates a control signal based on a direction of one of displacements of the CoP.

Abstract: Methods, apparatuses, and computer readable media for controlling virtual image scenarios in plurality display devices are disclosed. The method comprising: establishing, by a first display device in the virtual image system, a first virtual image scenario according to at least one predetermined image; receiving, by the first display device, a control signal; calculating, by the first display device, an absolute coordinate value corresponding to the at least one predetermined image according to an orientation and a view field of the first display device and the control signal; and displaying, by the first display device, a first object in the first virtual image scenario according to the absolute coordinate value.

Abstract: A center of pressure (CoP) based control system includes a sensing device and an electronic device connected to the sensing device. The sensing device includes sensors each of which continuously measures force exerted thereon by a subject and generates a sense signal based on a result of the measurement. The electronic device is connected to the sensing device, and receives the sense signals from the respective sensors, generates CoP data associated with a CoP trajectory based on the sense signals, determines whether a turning point exists in the CoP trajectory, generates an indication signal based on a result of the determination, and generates a control signal based on a direction of one of displacements of the CoP.

Abstract: A prosthesis carrying barrel suction-attaching joint with locking function, particularly a joint specifically for suction-attachment to a carrying barrel, includes a positioning mechanism, which forms, in a center thereof, a positioning pin hole for receiving a positioning pin to dispose therein. The positioning mechanism is provided, in a lateral direction, with a penetration passage and a vacuum release passage in communication with the positioning pin hole. The penetration passage has two ends on opposite sides of the positioning pin hole. One of the ends is provided with a regulation assembly and another one provided with a locking assembly. The locking assembly includes a constraint block for retaining the positioning pin so that a chamber for vacuum regulation is formed in the site where the regulation assembly is arranged. Pressing down the locking assembly allows external air to flow through the vacuum release passage into the chamber to release the vacuum.

Abstract: A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. The semiconductor body has a second polarity opposite to the first polarity. With the semiconductor body and the substrate respectively having the opposite second polarity and first polarity, a leakage current can be reduced while also lowering element production costs.

Abstract: A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in the NDDD region, a P-body diffused region disposed in a second active region of the patterned isolation layer, a neighboring pair of a N+ heavily doped source region and a P+ heavily doped source region disposed in the P-body diffused region, a first gate structure disposed above a channel region of the patterned isolation layer and a second gate structure disposed above the second active region. The second gate structure and the first gate structure are spaced at a predetermined distance. A making method of the NDDD region includes using an ion implant and an epitaxy layer doping.

Abstract: A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in the NDDD region, a P-body diffused region disposed in a second active region of the patterned isolation layer, a neighboring pair of a N+ heavily doped source region and a P+ heavily doped source region disposed in the P-body diffused region, a first gate structure disposed above a channel region of the patterned isolation layer and a second gate structure disposed above the second active region. The second gate structure and the first gate structure are spaced at a predetermined distance.

Abstract: A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. The semiconductor body has a second polarity opposite to the first polarity. With the semiconductor body and the substrate respectively having the opposite second polarity and first polarity, a leakage current can be reduced while also lowering element production costs.

Abstract: The present invention relates to a pedal adjusting structure, and a stepping training device with the pedal adjusting structure. The pedal adjusting structure includes a body for fixing the foot pedals adjusting structure on the stepping training device, a pedal, an adjusting structure connected between the body and the pedal. Via the adjusting structure, the relative angle and/or the relative height between the pedal and the body can be adjusted. Thus, the gait pattern induced in the stepping training device can mimic the normal gait pattern.